HERMETIC FULLY-FILLED METALLIZED THROUGH-HOLE VIAS

    公开(公告)号:US20200251424A1

    公开(公告)日:2020-08-06

    申请号:US16744776

    申请日:2020-01-16

    Abstract: According to various embodiments, an article including a glass or glass-ceramic substrate having a first major surface and a second major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length, L, the via defining a first axial portion, a third axial portion, and a second axial portion disposed between the first and third axial portions. The article further includes a helium hermetic adhesion layer disposed on the interior surface in the first and/or third axial portions and a metal connector disposed within the via, the metal connector being adhered to the helium hermetic adhesion layer. The metal connector fully fills the via over the axial length, L, the via has a maximum diameter, Φmax, of less than or equal to 30 μm, and the axial length, L, and the maximum diameter, Φmax, satisfy an equation: L Φ max > 20   micron 1 / 2 .

    Hermetic fully-filled metallized through-hole vias

    公开(公告)号:US11171094B2

    公开(公告)日:2021-11-09

    申请号:US16744776

    申请日:2020-01-16

    Abstract: According to various embodiments, an article including a glass or glass-ceramic substrate having a first major surface and a second major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length, L, the via defining a first axial portion, a third axial portion, and a second axial portion disposed between the first and third axial portions. The article further includes a helium hermetic adhesion layer disposed on the interior surface in the first and/or third axial portions and a metal connector disposed within the via, the metal connector being adhered to the helium hermetic adhesion layer. The metal connector fully fills the via over the axial length, L, the via has a maximum diameter, Φmax, of less than or equal to 30 μm, and the axial length, L, and the maximum diameter, Φmax, satisfy an equation: L Φ max > 20 ⁢ ⁢ micron 1 / 2 .

    BOTTOM-UP ELECTROLYTIC VIA PLATING METHOD
    10.
    发明申请
    BOTTOM-UP ELECTROLYTIC VIA PLATING METHOD 审中-公开
    底镀电镀方法

    公开(公告)号:US20160128202A1

    公开(公告)日:2016-05-05

    申请号:US14933315

    申请日:2015-11-05

    Abstract: Disclosed herein is a bottom-up electrolytic via plating method wherein a first carrier substrate and a second substrate having at least one through-via are temporarily bonded together. The method includes applying a seed layer on a surface of the first substrate, forming a surface modification layer on the seed layer or the second substrate, bonding the second substrate to the first substrate with the surface modification layer to create an assembly wherein the seed layer and the surface modification layer are disposed between the first and second substrates, applying conductive material to the through-via, removing the second substrate having the through-via containing conductive material from the assembly.

    Abstract translation: 本文公开了一种自下而上的电解通孔电镀方法,其中具有至少一个通孔的第一载体基板和第二基板临时粘合在一起。 该方法包括将种子层施加在第一衬底的表面上,在种子层或第二衬底上形成表面改性层,用表面改性层将第二衬底粘合到第一衬底以产生组件,其中种子层 并且所述表面改性层设置在所述第一和第二基板之间,将导电材料施加到所述通孔,从所述组件移除具有包含导电材料的所述通孔的所述第二基板。

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