Abstract:
A surface emission type electron source according to the present invention includes a first electrode having a planar form; a second electrode having a planar form facing the first electrode; an electron passage layer disposed between the first electrode and the second electrode; and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. The quantum wires are made of silicon, and each of the quantum wires has plural thin parts having small thicknesses formed at predetermined intervals along the first direction.
Abstract:
PROBLEM TO BE SOLVED: To provide a phase change memory selection type electron source, and pattern drawing apparatus, drawing a pattern with smooth contours of the pattern and at high resolution. SOLUTION: The phase change memory selected electron source has: a first electrode group in which a plurality of first electrodes are arranged extending in a certain direction; a second electrode group in which a plurality of second electrodes are arranged extending in another direction normal to the certain direction; and a matrix electrode section which is provided with a resistance layer arranged between the first electrode group and the second electrode group. A phase change memory layer the resistance value of which changes locally with the change of the material phase, an electron transmission layer, and a surface layer, are formed sequentially on the matrix electrode section. The electron source also has: a first power supply section that applies a voltage to the matrix electrode section and to the surface electrode; a second power supply section that applies a voltage to at least one of the first electrodes and to at least one of the second electrodes; and a pattern generation section that selects a first electrode and a second electrode based on the pattern and applies a voltage to the first electrode and the second electrode from the second power supply section. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a forming method of a nano structure using a ploysilicon layer capable of aligning height about a quantum fine line and constantly forming a diameter about a quantum dot. SOLUTION: The forming method of the nano structure using the polysilicon layer has a step of flatting the surface of the polysilicon layer, a step of subjecting the flattened polysilicon layer to an activating treatment and a step of subjecting the polysilicon layer to an anodic oxidation using a solution. COPYRIGHT: (C)2010,JPO&INPIT