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    2.
    发明专利
    未知

    公开(公告)号：AT531067T

    公开(公告)日：2011-11-15

    申请号：AT08740791

    申请日：2008-04-23

    Applicant: CRESTEC CORP

    Inventor： KOJIMA AKIRA ,  OHYI HIDEYUKI

    IPC: H01J1/312 ,  H01J3/14 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027

    Abstract: A surface emission type electron source according to the present invention includes a first electrode having a planar form; a second electrode having a planar form facing the first electrode; an electron passage layer disposed between the first electrode and the second electrode; and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. The quantum wires are made of silicon, and each of the quantum wires has plural thin parts having small thicknesses formed at predetermined intervals along the first direction.

    Phase change memory selection type electron source and pattern drawing apparatus
    3.
    发明专利
    Phase change memory selection type electron source and pattern drawing apparatus 审中-公开
    相变记忆选择型电子源和图案绘图装置

    公开(公告)号：JP2010103390A

    公开(公告)日：2010-05-06

    申请号：JP2008275131

    申请日：2008-10-27

    Applicant: Crestec Corp ,  株式会社クレステック

    Inventor： KOJIMA AKIRA ,  OI HIDEYUKI

    IPC: H01L21/027 ,  H01L27/105 ,  H01L45/00

    Abstract: PROBLEM TO BE SOLVED: To provide a phase change memory selection type electron source, and pattern drawing apparatus, drawing a pattern with smooth contours of the pattern and at high resolution.
    SOLUTION: The phase change memory selected electron source has: a first electrode group in which a plurality of first electrodes are arranged extending in a certain direction; a second electrode group in which a plurality of second electrodes are arranged extending in another direction normal to the certain direction; and a matrix electrode section which is provided with a resistance layer arranged between the first electrode group and the second electrode group. A phase change memory layer the resistance value of which changes locally with the change of the material phase, an electron transmission layer, and a surface layer, are formed sequentially on the matrix electrode section. The electron source also has: a first power supply section that applies a voltage to the matrix electrode section and to the surface electrode; a second power supply section that applies a voltage to at least one of the first electrodes and to at least one of the second electrodes; and a pattern generation section that selects a first electrode and a second electrode based on the pattern and applies a voltage to the first electrode and the second electrode from the second power supply section.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供相变存储器选择型电子源和图案绘制装置，以高分辨率绘制具有平滑轮廓的图案。 相变存储器选择的电子源具有：第一电极组，其中多个第一电极被布置成沿某一方向延伸; 第二电极组，其中多个第二电极布置在垂直于该特定方向的另一个方向上延伸; 以及矩阵电极部，其设置有布置在第一电极组和第二电极组之间的电阻层。 在基体电极部分上依次形成其电阻值随着材料相的变化，电子传输层和表面层而局部变化的相变存储层。 电子源还具有：向矩阵电极部分和表面电极施加电压的第一电源部分; 第二电源部，其对至少一个所述第一电极和所述第二电极中的至少一个施加电压; 以及图案生成部，其基于所述图案选择第一电极和第二电极，并且从所述第二电力供给部向所述第一电极和所述第二电极施加电压。 版权所有（C）2010，JPO＆INPIT

    Forming method of nano structure using polysilicon layer
    4.
    发明专利
    Forming method of nano structure using polysilicon layer 审中-公开
    使用多晶硅层的纳米结构的形成方法

    公开(公告)号：JP2009234823A

    公开(公告)日：2009-10-15

    申请号：JP2008080373

    申请日：2008-03-26

    Applicant: Crestec Corp ,  株式会社クレステック

    Inventor： KOJIMA AKIRA ,  OI HIDEYUKI ,  KOSHIDA NOBUYOSHI

    IPC: C01B33/02 ,  H01J9/02

    Abstract: PROBLEM TO BE SOLVED: To provide a forming method of a nano structure using a ploysilicon layer capable of aligning height about a quantum fine line and constantly forming a diameter about a quantum dot. SOLUTION: The forming method of the nano structure using the polysilicon layer has a step of flatting the surface of the polysilicon layer, a step of subjecting the flattened polysilicon layer to an activating treatment and a step of subjecting the polysilicon layer to an anodic oxidation using a solution. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供使用能够使量子细线上的高度对准并且不断形成量子点直径的合金硅层的纳米结构的形成方法。 解决方案：使用多晶硅层的纳米结构的形成方法具有使多晶硅层的表面平坦化的步骤，使平坦化的多晶硅层进行活化处理的步骤和使多晶硅层进行 使用溶液进行阳极氧化。 版权所有（C）2010，JPO＆INPIT

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