公开(公告)号：US12022270B2

公开(公告)日：2024-06-25

申请号：US17761669

申请日：2020-05-26

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jiale Su ,  Guoping Zhou ,  Xinwei Zhang ,  Changfeng Xia

IPC: H04R19/04 ,  B81C1/00 ,  H04R31/00

CPC classification number: H04R31/003 ,  B81C1/00158 ,  H04R19/04 ,  B81C2201/0105 ,  B81C2201/0116 ,  B81C2201/0133 ,  H04R2201/003

Abstract: A preparation method for a micro-electromechanical systems (MEMS) microphone includes the steps of: providing a silicon substrate having a silicon surface; forming an enclosed cavity in the silicon substrate; forming a plurality of spaced apart acoustic holes in the silicon substrate, each acoustic hole having two openings, one of which communicating with the cavity and the other one located on the silicon surface; forming a sacrificial layer on the silicon substrate, which includes a first filling portion, a second filling portion and a shielding portion; forming a polysilicon layer on the shielding portion; forming a recess in the silicon substrate on the side away from the silicon surface; and removing the first filling portion, the second filling portion and part of the shielding portion so that the recess is brought into communication with the cavity to form a back chamber, and that the polysilicon layer, the remainder of the shielding portion and the silicon substrate together delimit a hollow chamber, the hollow chamber communicating with the opening of the plurality of acoustic holes away from the cavity, completing the MEMS microphone.

公开(公告)号：US20200216307A1

公开(公告)日：2020-07-09

申请号：US16628001

申请日：2018-07-03

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Dan Dai ,  Changfeng Xia ,  Juanjuan Dong

IPC: B81C1/00 ,  B81B1/00

Abstract: A method for manufacturing a dual-cavity structure and a dual-cavity structure, including: etching on a semiconductor substrate to form a first trench array, tops of the first trench array being separated from each other and bottoms thereof being communicated with each other to form a first cavity; growing a first epitaxial layer on the semiconductor substrate on which the first trench array is formed, to cover the first trench array by the first epitaxial layer; etching on the first epitaxial layer to form a second trench array; tops of the second trench array being separated from each other and bottoms thereof being communicated with each other to form a second cavity; growing a second epitaxial layer on the first epitaxial layer on which the second trench array is formed; and etching the first epitaxial layer and the second epitaxial layer to form a straight groove.

公开(公告)号：US11671765B2

公开(公告)日：2023-06-06

申请号：US17422300

申请日：2020-04-30

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Yonggang Hu ,  Guoping Zhou ,  Changfeng Xia

IPC: H04R19/00 ,  H04R19/04 ,  B81B7/02

CPC classification number: H04R19/04 ,  B81B7/02 ,  H04R19/005 ,  B81B2201/0257 ,  B81B2203/0127 ,  H04R2201/003

Abstract: A Micro-Electro-Mechanical System (MEMS) device includes a substrate, and a first sacrificial layer, a first conductive film, a second sacrificial layer, and a second conductive film successively laminated on the substrate, the second sacrificial layer being provided with a cavity; and further includes an amplitude-limiting layer provided with a first through hole and an isolation layer provided with a second through hole. The amplitude-limiting layer is located between the first conductive film and the first sacrificial layer and the isolation layer is located between the amplitude-limiting layer and the first conductive film, and/or the amplitude-limiting layer is located on the second conductive film and the isolation layer is located between the amplitude-limiting layer and the second conductive film. The amplitude-limiting layer extends to a projection region of an opening of the cavity and is in a suspended state.