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    ENHANCED ETCHING/SMOOTHING OF DIELECTRIC SURFACES
    2.
    发明申请
    ENHANCED ETCHING/SMOOTHING OF DIELECTRIC SURFACES 审中-公开
    增强电介质表面的蚀刻/平滑

    公开(公告)号：WO0148794A3

    公开(公告)日：2002-01-03

    申请号：PCT/US0042551

    申请日：2000-12-05

    Applicant: EPION CORP

    Inventor： DYKSTRA JERALD P ,  MOUNT DAVID J SR ,  SKINNER WESLEY J ,  KIRKPATRICK ALLEN R

    IPC: G21K1/087 ,  G21K5/04 ,  H01J37/147 ,  H01L21/302 ,  H01L21/311 ,  H05H1/00 ,  C23C16/00

    CPC classification number: H01J37/147 ,  H01J2237/0044 ,  H01J2237/0203 ,  H01J2237/0812 ,  H01J2237/3151 ,  H01L21/31138

    Abstract: A gas cluster ion beam (GCIB) etching apparatus having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

    Abstract translation: 一种具有用于可控制地蚀刻衬底的用于产生气体簇离子束的系统的气体簇离子束（GCIB）蚀刻装置。 气体簇离子束最初沿着预选的纵向轴线引导。 GCIB蚀刻装置的一部分可操作地连接到光束产生系统，并且当被所述气体簇离子束撞击时包含待蚀刻的衬底。 GCIB蚀刻装置的一部分包括一个系统，用于将气体簇离子束沿预定的纵向轴线偏移的方向引导，同时允许不需要的电离辐射沿着纵向轴线保持定向。 衬底保持器位于GCIB蚀刻装置的一部分内，用于在蚀刻过程期间将衬底与偏移气体簇离子束对准，并且在蚀刻过程中基本上防止不需要的电离辐射撞击到衬底上。

    GAS CLUSTER ION BEAM LOW MASS ION FILTER
    3.
    发明申请
    GAS CLUSTER ION BEAM LOW MASS ION FILTER 审中-公开
    气体离子束低质量过滤器

    公开(公告)号：WO0140532A3

    公开(公告)日：2001-10-25

    申请号：PCT/US0042556

    申请日：2000-12-05

    Applicant: EPION CORP

    Inventor： TORTI RICHARD P ,  DYKSTRA JERALD P

    IPC: H01J37/05 ,  H01J37/305 ,  H01J49/04 ,  H05H7/04 ,  H05H3/00 ,  H01J37/30

    CPC classification number: H01J49/0422 ,  H01J27/026 ,  H01J37/05 ,  H01J49/10 ,  H01J2237/0812 ,  H05H7/04

    Abstract: Incorporating the use of a permanent magnet (252) within a GCIB apparatus to separate undesirable monomer ions from a gas cluster ion beam (148) to facilitate improved processing of workpieces (152). In an alternate embodiment, the effect of the permanent magnet may be controlled by the use of an electrical coil. The above system eliminates problems related to power consumption and heat generation.

    Abstract translation: 在GCIB设备中结合使用永磁体（252）以将不期望的单体离子与气体簇离子束（148）分离，以便改进工件（152）的处理。 在替代实施例中，永磁体的作用可以通过使用电线圈来控制。 上述系统消除了与功耗和发热有关的问题。

    ENHANCED ETCHING/SMOOTHING OF DIELECTRIC SURFACES
    4.
    发明公开
    ENHANCED ETCHING/SMOOTHING OF DIELECTRIC SURFACES 有权
    法蚀刻/光滑表面介电

    公开(公告)号：EP1247433A4

    公开(公告)日：2007-02-28

    申请号：EP00993156

    申请日：2000-12-05

    Applicant: EPION CORP

    Inventor： DYKSTRA JERALD P ,  MOUNT DAVID J SR ,  SKINNER WESLEY J ,  KIRKPATRICK ALLEN R

    IPC: G21K1/087 ,  H01J37/305 ,  G21K5/04 ,  H01J37/147 ,  H01L21/302 ,  H01L21/311

    CPC classification number: H01J37/147 ,  H01J2237/0044 ,  H01J2237/0203 ,  H01J2237/0812 ,  H01J2237/3151 ,  H01L21/31138

    Abstract: A gas cluster ion beam (GCIB) etching apparatus having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

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