公开(公告)号：US20130319519A1

公开(公告)日：2013-12-05

申请号：US13894980

申请日：2013-05-15

Applicant: EPISTAR CORPORATION

Inventor： Ming-Nan CHANG ,  Cheng-Hong CHEN

IPC: H01L31/0224

CPC classification number: H01L31/022433 ,  H01L31/02168 ,  H01L31/054 ,  Y02E10/52

Abstract: A concentrated photovoltaic cell comprises a semiconductor stack comprising an upper surface and a lower surface opposite to the upper surface, wherein the upper surface is operable to absorb a light which comprises a light intensity distribution on the upper surface; and an upper electrode formed on the upper surface of the semiconductor stack and comprising an electrode pattern approximately corresponding to the light intensity distribution, wherein the light intensity distribution comprises a high light-concentrated area having a first light intensity and a low light-concentrated area having a second light intensity, wherein the second light intensity is lower than the first light intensity.

Abstract translation: 集中的光伏电池包括半导体堆叠，其包括上表面和与所述上表面相对的下表面，其中所述上表面可操作地吸收包括在所述上表面上的光强度分布的光; 以及形成在所述半导体堆叠的上表面上并包括大致对应于所述光强度分布的电极图案的上电极，其中所述光强度分布包括具有第一光强度和低光集中区域的高光集中区域 具有第二光强度，其中第二光强度低于第一光强度。

公开(公告)号：US20170084763A1

公开(公告)日：2017-03-23

申请号：US15370672

申请日：2016-12-06

Applicant: EPISTAR CORPORATION

Inventor： Ming-nan CHANG ,  Cheng-Hong CHEN

IPC: H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/022433 ,  H01L31/02168 ,  H01L31/054 ,  Y02E10/52

Abstract: A semiconductor device used for conversion between light and electricity, comprising a semiconductor stack comprising an upper surface; and an upper electrode formed on the semiconductor stack and comprising a first linear electrode and second electrodes, wherein the first linear electrode is closer to a center of the upper surface than the second electrodes, wherein the first linear electrode has a width varying along a first direction thereof, and each of the second electrodes has a uniform width along a second direction thereof.

公开(公告)号：US20160190205A1

公开(公告)日：2016-06-30

申请号：US15059936

申请日：2016-03-03

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Cheng-Hong CHEN ,  Chih-Peng NI ,  Chun-Yu LIN

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/38 ,  H01L49/02 ,  H01L33/10

CPC classification number: H01L27/15 ,  H01L28/20 ,  H01L33/025 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.

Abstract translation: 提供了一种发光装置。 发光装置包括：半导体结构，包括第一类型半导体层，第二类型半导体层和在第一类型半导体层和第二类型半导体层之间的有源层; 以及通过所述第二类型半导体和所述有源层的隔离区，以将所述半导体结构分离成所述第一基板上的第一部分和第二部分; 其中第二部分用作低电阻电阻并失去其二极管行为，第一部分中的有源层能够产生光，并且第二部分中的有源层不能产生光。

公开(公告)号：US20140193932A1

公开(公告)日：2014-07-10

申请号：US14204764

申请日：2014-03-11

Applicant: Epistar Corporation

Inventor： Rong-Ren LEE ,  Cheng-Hong CHEN ,  Chih-Peng NI ,  Chun-Yu LIN

IPC: H01L33/60

CPC classification number: H01L27/15 ,  H01L28/20 ,  H01L33/025 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.

Abstract translation: 一种制造发光器件的方法包括以下步骤：提供第一衬底; 在所述第一衬底上形成半导体结构，其中所述半导体结构包括第一类型半导体层，第二类型半导体层和在所述第一类型半导体层和所述第二类型半导体层之间的有源层; 通过所述第二类型半导体和所述有源层形成隔离区，以将所述半导体结构分离成所述第一基板上的第一部分和第二部分; 以及向所述第二部分注入具有电流密度的电流，以使所述第二部分永久分解; 其中在所述第二部分被永久分解之后，所述第一部分能够产生电磁辐射，并且所述第二部分不能产生电磁辐射。