公开(公告)号：US20160013383A1

公开(公告)日：2016-01-14

申请号：US14796654

申请日：2015-07-10

Applicant: EPISTAR CORPORATION

Inventor： Chien-Ming WU ,  Rong-Ren LEE ,  Tzu-Chieh HSU ,  Ming-Nam CHANG

IPC: H01L33/60 ,  H01L33/30

CPC classification number: H01L33/10 ,  H01L33/30 ,  H01L33/38 ,  H01L33/46

Abstract: A light-emitting device comprising a substrate; a semiconductor stack capable of emitting a light; a first reflecting structure between the substrate and the semiconductor stack to reflect the light; and a second reflecting structure between the substrate and the semiconductor stack, wherein the first reflecting structure has a maximum reflectivity when the light is incident to the first reflecting structure at a first incident angle, the second reflecting structure has a maximum reflectivity when the light is incident to the second reflecting structure at a second incident angle.

Abstract translation: 1.一种发光器件，包括：衬底; 能够发光的半导体堆叠; 在基板和半导体叠层之间的第一反射结构以反射光; 以及在所述基板和所述半导体堆叠之间的第二反射结构，其中当所述光以第一入射角入射到所述第一反射结构时，所述第一反射结构具有最大反射率，所述第二反射结构在所述光为 以第二入射角入射到第二反射结构。

公开(公告)号：US20140048768A1

公开(公告)日：2014-02-20

申请号：US13970949

申请日：2013-08-20

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Chien-Fu HUANG ,  Shih-Chang LEE ,  Yi-Ming CHEN ,  Shiuan-Leh LIN

IPC: H01L33/04

CPC classification number: H01L33/04 ,  H01L33/06

Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

Abstract translation: 本文公开的发光器件包括衬底，形成在衬底上并包括第一量子阱，第二量子阱和设置在第一量子阱和第二量子阱之间的势垒层的有源层。 阻挡层包括与第一量子阱相邻的第一区域，与第二量子阱相邻的第三区域和设置在第一区域和第三区域之间并包含Sb的第二区域。

公开(公告)号：US20190131496A1

公开(公告)日：2019-05-02

申请号：US16228575

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/06 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

公开(公告)号：US20170263820A1

公开(公告)日：2017-09-14

申请号：US15066095

申请日：2016-03-10

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Rong-Ren LEE ,  Yu-Ren PENG ,  Ming-Siang HUANG ,  Ming-Ta CHIN ,  Yi-Ching LEE

IPC: H01L33/46 ,  H01L25/075 ,  H01L33/60

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength λ nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt.

公开(公告)号：US20170040492A1

公开(公告)日：2017-02-09

申请号：US15332730

申请日：2016-10-24

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih CHIU ,  Shih-I CHEN ,  You-Hsien CHANG ,  Hao-Min KU ,  Ching-Yuan TSAI ,  Kuan-Chih KUO ,  Chih-Hung HSIAO ,  Rong-Ren LEE

IPC: H01L33/22 ,  H01L33/60 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/22 ,  H01L33/02 ,  H01L33/025 ,  H01L33/10 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/305 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.

Abstract translation: 半导体发光器件包括用于发射光的外延结构，其包括边缘，第一部分和围绕第一部分的第二部分，其中第二部分中的掺杂材料的浓度高于掺杂材料的浓度 在第一部分中，外延结构上的主要光提取表面包括对应于第一部分的第一光提取区域和对应于第二部分和边缘的第二光提取区域，其中第二部分在 边缘和第一部分。

公开(公告)号：US20140134783A1

公开(公告)日：2014-05-15

申请号：US14161255

申请日：2014-01-22

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Yung-Szu SU ,  Shih-Chang LEE

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/0725 ,  Y02E10/50

Abstract: This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1-x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.

Abstract translation: 本申请涉及制造太阳能电池器件的方法，该方法包括提供包括Ge或GaAs的衬底; 在所述衬底上形成第一隧道结，其中所述第一隧道结包括包含InGaP：Te的第一n型层和包含Al x Ga（1-x）As并具有晶格常数的第一合金层; 向第一合金层中加入材料以改变晶格常数; 以及在所述第一隧道结上形成第一p-n结。

公开(公告)号：US20180374992A1

公开(公告)日：2018-12-27

申请号：US16043981

申请日：2018-07-24

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih CHIU ,  Shih-I CHEN ,  You-Hsien CHANG ,  Hao-Min KU ,  Ching-Yuan TSAI ,  Kuan-Chih KUO ,  Chih-Hung HSIAO ,  Rong-Ren LEE

IPC: H01L33/22 ,  H01L33/24 ,  H01L33/10 ,  H01L33/02 ,  H01L33/30 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

公开(公告)号：US20180269358A1

公开(公告)日：2018-09-20

申请号：US15983964

申请日：2018-05-18

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Rong-Ren LEE ,  Yu-Ren PENG ,  Ming-Siang HUANG ,  Ming-Ta CHIN ,  Yi-Ching LEE

IPC: H01L33/46 ,  H01L33/10 ,  H01L33/04 ,  H01L33/60 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

公开(公告)号：US20180013037A1

公开(公告)日：2018-01-11

申请号：US15699658

申请日：2017-09-08

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih CHIU ,  Shih-I CHEN ,  You-Hsien CHANG ,  Hao-Min KU ,  Ching-Yuan TSAI ,  Kuan-Chih KUO ,  Chih-Hung HSIAO ,  Rong-Ren LEE

IPC: H01L33/22 ,  H01L33/10 ,  H01L33/02 ,  H01L33/38 ,  H01L33/24 ,  H01L33/30 ,  H01L33/42 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40

CPC classification number: H01L33/22 ,  H01L33/02 ,  H01L33/025 ,  H01L33/10 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/305 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

公开(公告)号：US20180006187A1

公开(公告)日：2018-01-04

申请号：US15688126

申请日：2017-08-28

Applicant: EPISTAR CORPORATION

Inventor： Tsung-Hsien LIU ,  Rong-Ren LEE ,  Shih-Chang LEE

IPC: H01L33/08 ,  H01L33/06 ,  H01L33/04 ,  H01L33/30 ,  H01L33/02

CPC classification number: H01L33/08 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/305

Abstract: An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and the concentration of the second dopant in the second semiconductor layer is larger than that in the first semiconductor layer.