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公开(公告)号：US20160225955A1
公开(公告)日：2016-08-04
申请号：US15013439
申请日：2016-02-02
Applicant: EPISTAR CORPORATION
Inventor： Hung-Hsuan CHEN , Chih-Peng NI , Jui-Hsien CHANG , Hsin-Yu LEE , Tsen-Kuei WANG , Chen-Yen FAN
CPC classification number: H01L33/385 , H01L21/568 , H01L25/0753 , H01L33/0095 , H01L33/387 , H01L33/486 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/19 , H01L2224/24137
Abstract: This disclosure discloses a light-emitting device. The light-emitting device has a first outermost sidewall and includes a light-emitting diode and an electrode. The light-emitting diode has a pad and a side surface. The electrode has a segment formed on the pad to extend beyond the side surface, and a first protrusion extending from the segment to the first outermost sidewall.
Abstract translation: 本公开公开了一种发光装置。 发光装置具有第一最外侧的侧壁，并且包括发光二极管和电极。 发光二极管具有焊盘和侧面。 所述电极具有形成在所述焊盘上以延伸超过所述侧表面的段，以及从所述段延伸到所述第一最外侧壁的第一突起。
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公开(公告)号：US20200313051A1
公开(公告)日：2020-10-01
申请号：US16900557
申请日：2020-06-12
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
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公开(公告)号：US20170365750A1
公开(公告)日：2017-12-21
申请号：US15678885
申请日：2017-08-16
Applicant: Epistar Corporation
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching San TAO , Chih-Peng NI , Tzer-Perng CHEN , Jen-Chau WU , Masafumi SANO , Chih-Ming WANG
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
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公开(公告)号：US20160190205A1
公开(公告)日：2016-06-30
申请号：US15059936
申请日：2016-03-03
Applicant: EPISTAR CORPORATION
Inventor： Rong-Ren LEE , Cheng-Hong CHEN , Chih-Peng NI , Chun-Yu LIN
CPC classification number: H01L27/15 , H01L28/20 , H01L33/025 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.
Abstract translation: 提供了一种发光装置。 发光装置包括：半导体结构，包括第一类型半导体层，第二类型半导体层和在第一类型半导体层和第二类型半导体层之间的有源层; 以及通过所述第二类型半导体和所述有源层的隔离区，以将所述半导体结构分离成所述第一基板上的第一部分和第二部分; 其中第二部分用作低电阻电阻并失去其二极管行为，第一部分中的有源层能够产生光，并且第二部分中的有源层不能产生光。
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Patent Agency Ranking
公开(公告)号：US20150214449A1
公开(公告)日：2015-07-30
申请号：US14679066
申请日：2015-04-06
Applicant: Epistar Corporation
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
CPC classification number: H01L33/58 , H01L24/19 , H01L24/20 , H01L24/97 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L2933/0016
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
Abstract translation: 本公开公开了一种光电元件，包括：光电单元，包括第一金属层，第二金属层和最外侧表面; 绝缘层，其具有与光电单元重叠并延伸超过侧表面的第一部分，以及在横截面视图中与第一部分分离的第二部分; 以及形成在所述绝缘层上的第一导电层。
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公开(公告)号：US20140193932A1
公开(公告)日：2014-07-10
申请号：US14204764
申请日：2014-03-11
Applicant: Epistar Corporation
Inventor： Rong-Ren LEE , Cheng-Hong CHEN , Chih-Peng NI , Chun-Yu LIN
IPC: H01L33/60
CPC classification number: H01L27/15 , H01L28/20 , H01L33/025 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.
Abstract translation: 一种制造发光器件的方法包括以下步骤：提供第一衬底; 在所述第一衬底上形成半导体结构，其中所述半导体结构包括第一类型半导体层，第二类型半导体层和在所述第一类型半导体层和所述第二类型半导体层之间的有源层; 通过所述第二类型半导体和所述有源层形成隔离区，以将所述半导体结构分离成所述第一基板上的第一部分和第二部分; 以及向所述第二部分注入具有电流密度的电流，以使所述第二部分永久分解; 其中在所述第二部分被永久分解之后，所述第一部分能够产生电磁辐射，并且所述第二部分不能产生电磁辐射。
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公开(公告)号：US20180254391A1
公开(公告)日：2018-09-06
申请号：US15973091
申请日：2018-05-07
Applicant: Epistar Corporation
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
CPC classification number: H01L33/58 , H01L24/19 , H01L24/20 , H01L24/97 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L2933/0016
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
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公开(公告)号：US20180019382A9
公开(公告)日：2018-01-18
申请号：US14858477
申请日：2015-09-18
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching San TAO , Chih-Peng NI , Tzer-Perng CHEN , Jen-Chau WU , Masafumi SANO , Chih-Ming WANG
CPC classification number: H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
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公开(公告)号：US20160013371A1
公开(公告)日：2016-01-14
申请号：US14858477
申请日：2015-09-18
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching San TAO , Chih-Peng NI , Tzer-Perng CHEN , Jen-Chau WU , Masafumi SANO , Chih-Ming WANG
CPC classification number: H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
Abstract translation: 光电元件包括光电单元，第一金属层，第二金属层，导电层和透明结构。 光电单元在顶视图中具有中心线，顶表面和底表面。 第二金属层形成在顶表面上，并且具有与中心线交叉并延伸到第一金属层的延伸部分。 导电层覆盖第一金属层和延伸部分。 透明结构覆盖底面而不覆盖顶面。
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