公开(公告)号：US20230163239A1

公开(公告)日：2023-05-25

申请号：US18099583

申请日：2023-01-20

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun TSENG ,  Kuo-Feng HUANG ,  Shih-Chang LEE ,  Ming-Ta CHIN ,  Shih-Nan YEN ,  Cheng-Hsing CHIANG ,  Chia-Hung LIN ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Jui-Che SUNG ,  Shih-Hao CHENG

IPC: H01L33/14 ,  H01L33/08 ,  H01L33/20 ,  H01L33/02

CPC classification number: H01L33/14 ,  H01L33/08 ,  H01L33/20 ,  H01L33/025

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.