公开(公告)号：US20230058195A1

公开(公告)日：2023-02-23

申请号：US17892814

申请日：2022-08-22

Applicant: EPISTAR CORPORATION

Inventor： Shih-Nan YEN ,  Ming-Ta CHIN ,  Yi-Ching LEE ,  Cheng-Long YEH

IPC: H01L33/30 ,  H01L33/06 ,  H01L33/22

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first semiconductor layer which includes a first dopant and a second dopant. The second semiconductor structure is located on the first semiconductor structure and includes the first dopan. The active region is located between the first semiconductor structure and the second semiconductor structure and includes the first dopant. The first dopant and the second dopant have different conductivity types.

公开(公告)号：US20230163239A1

公开(公告)日：2023-05-25

申请号：US18099583

申请日：2023-01-20

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun TSENG ,  Kuo-Feng HUANG ,  Shih-Chang LEE ,  Ming-Ta CHIN ,  Shih-Nan YEN ,  Cheng-Hsing CHIANG ,  Chia-Hung LIN ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Jui-Che SUNG ,  Shih-Hao CHENG

IPC: H01L33/14 ,  H01L33/08 ,  H01L33/20 ,  H01L33/02

CPC classification number: H01L33/14 ,  H01L33/08 ,  H01L33/20 ,  H01L33/025

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.