公开(公告)号：US20230058195A1

公开(公告)日：2023-02-23

申请号：US17892814

申请日：2022-08-22

Applicant: EPISTAR CORPORATION

Inventor： Shih-Nan YEN ,  Ming-Ta CHIN ,  Yi-Ching LEE ,  Cheng-Long YEH

IPC: H01L33/30 ,  H01L33/06 ,  H01L33/22

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first semiconductor layer which includes a first dopant and a second dopant. The second semiconductor structure is located on the first semiconductor structure and includes the first dopan. The active region is located between the first semiconductor structure and the second semiconductor structure and includes the first dopant. The first dopant and the second dopant have different conductivity types.

公开(公告)号：US20180033918A1

公开(公告)日：2018-02-01

申请号：US15709810

申请日：2017-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US20200152836A1

公开(公告)日：2020-05-14

申请号：US16680214

申请日：2019-11-11

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh LIAO ,  Cheng-Long YEH ,  Ko-Yin LAI ,  Yao-Ru CHANG ,  Yung-Fu CHANG ,  Yi HSIAO ,  Shih-Chang LEE

IPC: H01L33/38 ,  H01L33/62

Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

公开(公告)号：US20190148599A1

公开(公告)日：2019-05-16

申请号：US16227253

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/06 ,  H01L33/44

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US20230163239A1

公开(公告)日：2023-05-25

申请号：US18099583

申请日：2023-01-20

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun TSENG ,  Kuo-Feng HUANG ,  Shih-Chang LEE ,  Ming-Ta CHIN ,  Shih-Nan YEN ,  Cheng-Hsing CHIANG ,  Chia-Hung LIN ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Jui-Che SUNG ,  Shih-Hao CHENG

IPC: H01L33/14 ,  H01L33/08 ,  H01L33/20 ,  H01L33/02

CPC classification number: H01L33/14 ,  H01L33/08 ,  H01L33/20 ,  H01L33/025

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

公开(公告)号：US20190131496A1

公开(公告)日：2019-05-02

申请号：US16228575

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/06 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.