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公开(公告)号：US20170331001A1
公开(公告)日：2017-11-16
申请号：US15591544
申请日：2017-05-10
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Feng YU , Ching-Yuan TSAI , Yao-Ru CHANG , Hsin-Chan CHUNG , Shih-Chang LEE , Wen-Luh LIAO , Cheng-Hsing CHIANG , Kuo-Feng HUANG , Hsu-Hsuan TENG , Hung-Ta CHENG , Yung-Fu CHANG
CPC classification number: H01L33/06 , H01L33/002 , H01L33/0079 , H01L33/30 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0066
Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
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公开(公告)号：US20180351036A1
公开(公告)日：2018-12-06
申请号：US16041398
申请日：2018-07-20
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Feng YU , Ching-Yuan TSAI , Yao-Ru CHANG , Hsin-Chan CHUNG , Shih-Chang LEE , Wen-Luh LIAO , Cheng-Hsing CHIANG , Kuo-Feng HUANG , Hsu-Hsuan TENG , Hung-Ta CHENG , Yung-Fu CHANG
CPC classification number: H01L33/06 , H01L33/002 , H01L33/0079 , H01L33/30 , H01L33/42 , H01L33/46 , H01L33/60 , H01L33/62 , H01L33/642 , H01L2933/0016 , H01L2933/0066
Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
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Patent Agency Ranking
公开(公告)号：US20170098735A1
公开(公告)日：2017-04-06
申请号：US14873547
申请日：2015-10-02
Applicant: EPISTAR CORPORATION
Inventor： Kuo-Feng HUANG , Cheng-Hsing CHIANG , Jih-Ming TU
CPC classification number: H01L33/30 , H01L33/0062 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/38 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device further comprises a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the composition of the first sub-layer is with a different atomic ratio from that of the second sub-layer. A method for manufacturing the light-emitting device is also provided.
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公开(公告)号：US20230163239A1
公开(公告)日：2023-05-25
申请号：US18099583
申请日：2023-01-20
Applicant: EPISTAR CORPORATION
Inventor： Yen-Chun TSENG , Kuo-Feng HUANG , Shih-Chang LEE , Ming-Ta CHIN , Shih-Nan YEN , Cheng-Hsing CHIANG , Chia-Hung LIN , Cheng-Long YEH , Yi-Ching LEE , Jui-Che SUNG , Shih-Hao CHENG
CPC classification number: H01L33/14 , H01L33/08 , H01L33/20 , H01L33/025
Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.
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公开(公告)号：US20190229233A1
公开(公告)日：2019-07-25
申请号：US16374282
申请日：2019-04-03
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Feng YU , Ching-Yuan TSAI , Yao-Ru CHANG , Hsin-Chan CHUNG , Shih-Chang LEE , Wen-Luh LIAO , Cheng-Hsing CHIANG , Kuo-Feng HUANG , Hsu-Hsuan TENG , Hung-Ta CHENG , Yung-Fu CHANG
Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
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公开(公告)号：US20190148591A1
公开(公告)日：2019-05-16
申请号：US16247191
申请日：2019-01-14
Applicant: EPISTAR CORPORATION
Inventor： Kuo-Feng HUANG , Cheng-Hsing CHIANG , Jih-Ming TU
CPC classification number: H01L33/30 , H01L33/0062 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/38 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.
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公开(公告)号：US20180026158A1
公开(公告)日：2018-01-25
申请号：US15722551
申请日：2017-10-02
Applicant: EPISTAR CORPORATION
Inventor： Kuo-Feng HUANG , Cheng-Hsing CHIANG , Jih-Ming TU
CPC classification number: H01L33/30 , H01L33/0062 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/38 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.
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