公开(公告)号：US10134735B2

公开(公告)日：2018-11-20

申请号：US15632391

申请日：2017-06-26

Applicant: National Applied Research Laboratories ,  EPISTAR Corporation

Inventor： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC: H01L27/092 ,  H01L29/20 ,  H01L29/16 ,  H01L21/8238

Abstract: A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

公开(公告)号：US10008636B2

公开(公告)日：2018-06-26

申请号：US15796241

申请日：2017-10-27

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Rong-Ren Lee ,  Yu-Ren Peng ,  Ming-Siang Huang ,  Ming-Ta Chin ,  Yi-Ching Lee

IPC: H01L33/46 ,  H01L33/60 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength λ nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

公开(公告)号：US20170373064A1

公开(公告)日：2017-12-28

申请号：US15632391

申请日：2017-06-26

Applicant: National Applied Research Laboratories ,  EPISTAR Corporation

Inventor： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L27/0924 ,  H01L21/823821 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/66795 ,  H01L29/7853

Abstract: A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

公开(公告)号：US09793436B2

公开(公告)日：2017-10-17

申请号：US15332730

申请日：2016-10-24

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Shih-I Chen ,  You-Hsien Chang ,  Hao-Min Ku ,  Ching-Yuan Tsai ,  Kuan-Chih Kuo ,  Chih-Hung Hsiao ,  Rong-Ren Lee

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/02 ,  H01L33/24 ,  H01L33/10 ,  H01L33/30 ,  H01L33/42 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40

CPC classification number: H01L33/22 ,  H01L33/02 ,  H01L33/025 ,  H01L33/10 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/305 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.

公开(公告)号：US09035280B2

公开(公告)日：2015-05-19

申请号：US13970949

申请日：2013-08-20

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren Lee ,  Chien-Fu Huang ,  Shih-Chang Lee ,  Yi-Ming Chen ,  Shiuan-Leh Lin

IPC: H01L33/06 ,  H01L33/04

CPC classification number: H01L33/04 ,  H01L33/06

Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

Abstract translation: 本文公开的发光器件包括衬底，形成在衬底上并包括第一量子阱，第二量子阱和设置在第一量子阱和第二量子阱之间的势垒层的有源层。 阻挡层包括与第一量子阱相邻的第一区域，与第二量子阱相邻的第三区域和设置在第一区域和第三区域之间并包含Sb的第二区域。

公开(公告)号：US11189754B2

公开(公告)日：2021-11-30

申请号：US16452126

申请日：2019-06-25

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Rong-Ren Lee

IPC: H01L33/18 ,  H01L21/02 ,  H01L33/00 ,  H01L33/30 ,  H01L29/04 ,  H01L29/205 ,  H01L29/778 ,  H01L33/02 ,  H01L21/20 ,  H01S5/22

Abstract: A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.

公开(公告)号：US10217892B2

公开(公告)日：2019-02-26

申请号：US15219788

申请日：2016-07-26

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren Lee ,  Yung-Szu Su ,  Shih-Chang Lee

IPC: H01L31/18 ,  H01L31/0725

Abstract: This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1−x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.

公开(公告)号：US09859470B2

公开(公告)日：2018-01-02

申请号：US15066095

申请日：2016-03-10

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Rong-Ren Lee ,  Yu-Ren Peng ,  Ming-Siang Huang ,  Ming-Ta Chin ,  Yi-Ching Lee

IPC: H01L33/46 ,  H01L33/60 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength λ nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt.

公开(公告)号：US20170005227A1

公开(公告)日：2017-01-05

申请号：US15266249

申请日：2016-09-15

Applicant: EPISTAR CORPORATION

Inventor： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

IPC: H01L33/10 ,  H01L33/38 ,  H01L33/46

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.

Abstract translation: 发光二极管包括用于发射光线的有源层; 在所述有源层上的上半导体堆叠，其中所述上半导体堆叠包括窗口层; 反射器 以及在所述有源层和所述反射器之间的下半导体堆叠; 其中所述窗口层的厚度小于或等于3μm，并且所述下半导体叠层的厚度小于或等于1μm。

公开(公告)号：US09444019B1

公开(公告)日：2016-09-13

申请号：US14859739

申请日：2015-09-21

Applicant: EPISTAR CORPORATION

Inventor： Shih-Chang Lee ,  Rong-Ren Lee ,  Meng-Yang Chen

IPC: H01L21/30 ,  H01L33/44 ,  H01L33/06 ,  H01L33/12 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/12 ,  H01L33/30

Abstract: A method for making a light-emitting device is provided. The method comprises the steps of providing a substrate, forming a nucleation layer on the substrate, forming a semiconductor stack on the nucleation layer, and separating the semiconductor stack from the nucleation layer to expose the nucleation layer.

Abstract translation: 提供一种制造发光器件的方法。 该方法包括以下步骤：提供衬底，在衬底上形成成核层，在成核层上形成半导体叠层，以及将半导体叠层与成核层分离以露出成核层。