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    Method of selectively transferring semiconductor device
    1.
    发明授权
    Method of selectively transferring semiconductor device 有权

    公开(公告)号：US10693034B2

    公开(公告)日：2020-06-23

    申请号：US15683041

    申请日：2017-08-22

    Applicant: EPISTAR CORPORATION

    Inventor： Hao-Min Ku ,  You-Hsien Chang ,  Shih-I Chen ,  Fu-Chun Tsai ,  Hsin-Chih Chiu

    IPC: H01L21/683 ,  H01L33/62 ,  H01L33/00

    Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

    LIGHT EMITTING DEVICE
    3.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140264411A1

    公开(公告)日：2014-09-18

    申请号：US14050707

    申请日：2013-10-10

    Applicant: Epistar Corporation

    Inventor： Chun-Yu Lin ,  Tzu-Chieh Hsu ,  Fu-Chun Tsai ,  Yi-Wen Huang ,  Chih-Chiang Lu

    IPC: H01L33/02 ,  H01L33/60

    CPC classification number: H01L33/44 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/60

    Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

    Abstract translation: 本公开公开了一种发光芯片，包括：具有侧壁的发光叠层，包括发射光的有源层; 以及光吸收层，其具有围绕所述侧壁的第一部分，并且被配置为朝向所述光吸收层吸收50％的光。

    Method of selectively transferring semiconductor device
    6.
    发明授权
    Method of selectively transferring semiconductor device 有权

    公开(公告)号：US11211522B2

    公开(公告)日：2021-12-28

    申请号：US16908167

    申请日：2020-06-22

    Applicant: EPISTAR CORPORATION

    Inventor： Hao-Min Ku ,  You-Hsien Chang ,  Shih-I Chen ,  Fu-Chun Tsai ,  Hsin-Chih Chiu

    IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

    Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.

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