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    Method of selectively transferring semiconductor device
    1.
    发明授权
    Method of selectively transferring semiconductor device 有权

    公开(公告)号：US11211522B2

    公开(公告)日：2021-12-28

    申请号：US16908167

    申请日：2020-06-22

    Applicant: EPISTAR CORPORATION

    Inventor： Hao-Min Ku ,  You-Hsien Chang ,  Shih-I Chen ,  Fu-Chun Tsai ,  Hsin-Chih Chiu

    IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

    Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.

    Light-emitting device
    3.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11349047B2

    公开(公告)日：2022-05-31

    申请号：US17114012

    申请日：2020-12-07

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Ming Chen ,  Hao-Min Ku ,  Chih-Chiang Lu ,  Tzu-Chieh Hsu

    IPC: H01L33/10 ,  H01L33/40 ,  H01L33/38

    Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

    Method of selectively transferring semiconductor device
    5.
    发明授权
    Method of selectively transferring semiconductor device 有权
    选择性地转移半导体器件的方法

    公开(公告)号：US09508894B2

    公开(公告)日：2016-11-29

    申请号：US14908886

    申请日：2013-07-29

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-Chiang Lu ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Ching-Pei Lin ,  Chung-Hsun Chien ,  Chien-Fu Huang ,  Hao-Min Ku ,  Min-Hsun Hsieh ,  Tzu-Chieh Hsu

    IPC: H01L33/62 ,  H01L33/00 ,  H01L21/683

    CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

    Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

    Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

    Light-emitting device
    6.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10892380B2

    公开(公告)日：2021-01-12

    申请号：US16673312

    申请日：2019-11-04

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Ming Chen ,  Hao-Min Ku ,  Chih-Chiang Lu ,  Tzu-Chieh Hsu

    IPC: H01L33/10 ,  H01L33/40 ,  H01L33/38

    Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

    Method of selectively transferring semiconductor device
    9.
    发明授权
    Method of selectively transferring semiconductor device 有权

    公开(公告)号：US10693034B2

    公开(公告)日：2020-06-23

    申请号：US15683041

    申请日：2017-08-22

    Applicant: EPISTAR CORPORATION

    Inventor： Hao-Min Ku ,  You-Hsien Chang ,  Shih-I Chen ,  Fu-Chun Tsai ,  Hsin-Chih Chiu

    IPC: H01L21/683 ,  H01L33/62 ,  H01L33/00

    Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

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