公开(公告)号：US20180331151A1

公开(公告)日：2018-11-15

申请号：US16042769

申请日：2018-07-23

Applicant: Epistar Corporation

Inventor： Tsung-Hsien YANG ,  Han-Min WU ,  Jhih-Sian WANG ,  Yi-Ming CHEN ,  Tzu-Ghieh HSU

IPC: H01L27/15 ,  H01L29/06 ,  H01L33/08

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L29/0649 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.

公开(公告)号：US20140034977A1

公开(公告)日：2014-02-06

申请号：US13959891

申请日：2013-08-06

Applicant: Epistar Corporation

Inventor： Tsung-Hsien YANG ,  Han-Min WU ,  Jhih-Sian WANG ,  Yi-Ming CHEN ,  Tzu-Ghieh HSU

IPC: H01L33/08

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L29/0649 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: The application provides a light-emitting diode array, including: a first light-emitting diode including a first area; a second area; a first isolation path between the first area and the second area, and the first isolation path including an electrode isolation layer; and an electrode contact layer covering the first area; a second light-emitting diode including a semiconductor stack layer; and a second electrical bonding pad on the semiconductor stack layer; and a second isolation path between the first light-emitting diode and the second light-emitting diode, wherein the second isolation path includes an electrical connecting structure electrically connected to the first light-emitting diode and the second light-emitting diode.

Abstract translation: 本发明提供了一种发光二极管阵列，包括：包括第一区域的第一发光二极管; 第二个区域 在第一区域和第二区域之间的第一隔离路径，并且第一隔离路径包括电极隔离层; 以及覆盖所述第一区域的电极接触层; 包括半导体堆叠层的第二发光二极管; 和在所述半导体堆叠层上的第二电焊盘; 以及第一发光二极管和第二发光二极管之间的第二隔离路径，其中第二隔离路径包括与第一发光二极管和第二发光二极管电连接的电连接结构。

公开(公告)号：US20170117450A1

公开(公告)日：2017-04-27

申请号：US15401710

申请日：2017-01-09

Applicant: EPISTAR CORPORATION

Inventor： Shih-I CHEN ,  Chia-Liang HSU ,  Tzu-Chieh HSU ,  Han-Min WU ,  Ye-Ming HSU ,  Chien-Fu HUANG ,  Chao-Hsing CHEN ,  Chiu-Lin YAO ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/42 ,  H01L33/60 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.

公开(公告)号：US20160141331A1

公开(公告)日：2016-05-19

申请号：US15006374

申请日：2016-01-26

Applicant: Epistar Corporation

Inventor： Tsung-Hsien YANG ,  Han-Min WU ,  Jhih-Sian WANG ,  Yi-Ming CHEN ,  Tzu-Ghieh HSU

IPC: H01L27/15 ,  H01L29/06 ,  H01L33/38

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L29/0649 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A light-emitting diode is provided. The light-emitting diode comprises: a first light-emitting structure, comprising: a first area; a second area; a first isolation path having an electrode isolation layer between the first area and the second area; an electrode contact layer covering the first area; and an electrical connecting structure covering the second area; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and the electrode contact layer covers a sidewall of the first area.

Abstract translation: 提供了一种发光二极管。 发光二极管包括：第一发光结构，包括：第一区域; 第二个区域 第一隔离路径，在第一区域和第二区域之间具有电极隔离层; 覆盖所述第一区域的电极接触层; 以及覆盖所述第二区域的电连接结构; 其中所述第一区域和所述第二区域中的每一个顺序地包括第一导电类型半导体层，有源层和第二导电类型半导体层，并且所述电极接触层覆盖所述第一区域的侧壁。

公开(公告)号：US20180287031A1

公开(公告)日：2018-10-04

申请号：US16001676

申请日：2018-06-06

Applicant: EPISTAR CORPORATION

Inventor： Shih-I CHEN ,  Chia-Liang HSU ,  Tzu-Chieh HSU ,  Han-Min WU ,  Ye-Ming HSU ,  Chien-Fu HUANG ,  Chao-Hsing CHEN ,  Chiu-Lin YAO ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L33/62 ,  H01L33/60 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L25/075 ,  H01L33/48 ,  H01L33/46 ,  H01L33/44 ,  H01L33/42 ,  H01L33/38 ,  H01L33/14 ,  H01L33/40 ,  H01L33/32

Abstract: A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.

公开(公告)号：US20180047779A1

公开(公告)日：2018-02-15

申请号：US15794842

申请日：2017-10-26

Applicant: Epistar Corporation

Inventor： Tsung-Hsien YANG ,  Han-Min WU ,  Jhih-Sian WANG ,  Yi-Ming CHEN ,  Tzu-Ghieh HSU

IPC: H01L27/15 ,  H01L33/08 ,  H01L29/06 ,  H01L33/38 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L29/0649 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.

公开(公告)号：US20150194586A1

公开(公告)日：2015-07-09

申请号：US14663544

申请日：2015-03-20

Applicant: Epistar Corporation

Inventor： Shih-I CHEN ,  Chia-Liang HSU ,  Tzu-Chieh HSU ,  Han-Min WU ,  Ye-Ming HSU ,  Chien-Fu HUANG ,  Chao-Hsing CHEN ,  Chiu-Lin YAO ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L33/62 ,  H01L33/14 ,  H01L33/10 ,  H01L33/08 ,  H01L33/48 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.

Abstract translation: 公开了一种发光器件。 发光装置包括支撑基板; 第一发光元件和第二发光元件，其中所述第一发光元件包括在所述支撑基板上的透明层，所述透明层上的第一发光层叠层，以及多个 透明层与第一发光层叠层之间的接触部分; 并且所述第二发光元件包括在所述电极和所述支撑衬底之间的电极和第二发光层叠层; 以及在所述支撑基板上的金属线，并且电连接所述电极和所述接触部分之一。

公开(公告)号：US20140034988A1

公开(公告)日：2014-02-06

申请号：US14047778

申请日：2013-10-07

Applicant: Epistar Corporation

Inventor： Min-Hsun HSIEH ,  Chien-Yuan WANG ,  Tsung-Xian LEE ,  Chih-Ming WANG ,  Ming-Chi HSU ,  Han-Min WU

IPC: H01L33/58

CPC classification number: H01L33/58 ,  H01L33/46 ,  H01L33/507 ,  H01L33/56 ,  H01L2933/0091

Abstract: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element; a second light guide layer covering the first light guide layer; a low refractive index layer between the first light guide layer and the second light guide layer to reflect the light from the second light guide layer; and a wavelength conversion layer covering the second light guide layer; wherein the low refractive index layer has a refractive index smaller than one of the refractive indices of first light guide layer and the second light guide layer.

Abstract translation: 公开了一种发光装置，包括：载体; 设置在所述载体上的发光元件; 覆盖所述发光元件的第一导光层; 覆盖所述第一导光层的第二导光层; 第一导光层和第二导光层之间的低折射率层，以反射来自第二导光层的光; 以及覆盖所述第二导光层的波长转换层; 其中所述低折射率层的折射率小于所述第一导光层和所述第二导光层的折射率之一。