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    LIGHT-EMITTING DEVICE
    2.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140070250A1

    公开(公告)日：2014-03-13

    申请号：US13856220

    申请日：2013-04-03

    Applicant: Epistar Corporation

    Inventor： Shih-I CHEN ,  Tsung-Xian LEE ,  Yi-Ming CHEN ,  Wei-Yu CHEN ,  Ching- Pei LIN ,  Min-Hsun HSIEH ,  Cheng-Nan HAN ,  Tien-Yang WANG ,  Hsing-Chao CHEN ,  Hsin-Mao LIU ,  Zong-Xi CHEN ,  Tzu-Chieh HSU ,  Chien-Fu HUANG ,  Yu-Ren PENG

    IPC: H01L33/50

    CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

    Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200321487A1

    公开(公告)日：2020-10-08

    申请号：US16908167

    申请日：2020-06-22

    Applicant: EPISTAR CORPORATION

    Inventor： Hao-Min KU ,  You-Hsien CHANG ,  Shih-I CHEN ,  Fu-Chun TSAI ,  Hsin-Chih CHIU

    IPC: H01L33/00 ,  H01L21/683

    Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    4.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20160211412A1

    公开(公告)日：2016-07-21

    申请号：US14996744

    申请日：2016-01-15

    Applicant: EPISTAR CORPORATION

    Inventor： Hsin-Chih CHIU ,  Shih-I CHEN ,  Chih-Chiang LU

    IPC: H01L33/22 ,  H01L33/30 ,  H01L33/42 ,  H01L33/38 ,  H01L33/40

    CPC classification number: H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/505

    Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising a first semiconductor stack, a second semiconductor stack, and an active layer between the first semiconductor stack and second semiconductor stack for emitting a light; and a main light-extraction surface on the first semiconductor stack, wherein the light passes through the main light-extraction surface. The main light-extraction surface comprises a first light-extraction region, a second light-extraction region, and a maximum near-field luminous intensity. The distribution of the near-field luminous intensity in the first light-extraction region is between 70% and 100% of the maximum near-field luminous intensity, the distribution of the near-field luminous intensity in the second light-extraction region is between 0% and 70% of the maximum near-field luminous intensity. A ratio of an area of the first light-extraction region to an area of the second light-extraction region is between 0.25 and 0.45.

    Abstract translation: 半导体发光器件包括外延结构，该外延结构包括第一半导体叠层，第二半导体叠层以及用于发射光的第一半导体叠层和第二半导体叠层之间的有源层; 以及在第一半导体堆叠上的主光提取表面，其中光穿过主光提取表面。 主光提取表面包括第一光提取区域，第二光提取区域和最大近场发光强度。 第一光提取区域中的近场发光强度的分布在最大近场发光强度的70％至100％之间，第二光提取区域中的近场发光强度的分布在 0％和70％的最大近场发光强度。 第一光提取区域的面积与第二光提取区域的面积的比率在0.25和0.45之间。

    LIGHT-EMITTING DEVICE
    5.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20150144975A1

    公开(公告)日：2015-05-28

    申请号：US14088705

    申请日：2013-11-25

    Applicant: EPISTAR CORPORATION

    Inventor： Fu-Chun TSAI ,  Wen-Luh LIAO ,  Yao-Ru CHANG ,  Shih-I CHEN ,  Chih-Chiang LU

    IPC: H01L33/30

    CPC classification number: H01L33/30 ,  H01L33/0079 ,  H01L33/16

    Abstract: A light-emitting device comprises a substrate; and a semiconductor stack comprising a III-V group material formed on the substrate, wherein the substrate comprises a first amorphous portion adjacent to the semiconductor stack, and a portion having a material different from that of the first amorphous portion and away from the semiconductor stack, wherein the first amorphous portion has a first refractive index, the portion has a second refractive index, and the first refractive index is higher than the second refractive index and lower than a refractive index of the semiconductor stack.

    Abstract translation: 发光装置包括基板; 以及包括形成在所述基板上的III-V族材料的半导体堆叠，其中所述基板包括与所述半导体叠层相邻的第一非晶体部分和具有与所述第一非晶部分的材料不同的材料并远离所述半导体叠层的部分 其中，所述第一非晶部分具有第一折射率，所述部分具有第二折射率，并且所述第一折射率高于所述第二折射率且低于所述半导体叠层的折射率。

    LIGHT-EMITTING DEVICE
    7.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20180294383A1

    公开(公告)日：2018-10-11

    申请号：US16003866

    申请日：2018-06-08

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I CHEN ,  Wei-Yu CHEN ,  Yi-Ming CHEN ,  Ching-Pei LIN ,  Tsung-Xian LEE

    IPC: H01L33/42 ,  H01L33/38

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

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