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    LIGHT-EMITTING DEVICE
    1.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20210367098A1

    公开(公告)日：2021-11-25

    申请号：US17397388

    申请日：2021-08-09

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih CHIU

    IPC: H01L33/02 ,  H01L21/66 ,  H01L33/62 ,  H01L25/075 ,  H01L23/00

    Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

    METHOD FOR MAKING LIGHT-EMITTING DEVICE
    3.
    发明申请
    METHOD FOR MAKING LIGHT-EMITTING DEVICE 有权
    制造发光装置的方法

    公开(公告)号：US20160149072A1

    公开(公告)日：2016-05-26

    申请号：US14550016

    申请日：2014-11-21

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Wen-Luh LIAO ,  Shou-Lung CHEN ,  Chien-Fu HUANG

    IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10

    CPC classification number: H01L33/08 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

    Abstract: A method for making a light-emitting device comprises the steps of: providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, and the second light-emitting semiconductor stack comprises a second active layer; and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength.

    Abstract translation: 制造发光器件的方法包括以下步骤：提供生长衬底; 通过外延生长在生长衬底上形成第一发光半导体堆叠，并且第一发光半导体堆叠包括第一有源层; 通过外延生长在第一发光半导体堆叠上形成分布布拉格反射器; 通过外延生长在所述分布式布拉格反射器上形成第二发光半导体堆叠，并且所述第二发光半导体堆叠包括第二有源层; 并且其中所述第一有源层发射第一主波长的第一辐射，并且所述第二有源层发射比所述第一主波长长的第二主波长的第二辐射。

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20160155894A1

    公开(公告)日：2016-06-02

    申请号：US14901415

    申请日：2013-06-26

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih Chiu

    IPC: H01L33/02 ,  H01L21/66 ,  H01L33/62

    CPC classification number: H01L33/02 ,  H01L22/12 ,  H01L22/14 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface.

    Abstract translation: 本公开提供了一种制造发光器件的方法，包括：提供第一衬底; 在所述第一衬底上提供半导体堆叠，所述半导体堆叠包括第一导电类型半导体层，所述第一导电类型半导体层上的发光层和所述发光层上的第二导电类型半导体层，其中所述半导体 堆叠被图案化并且包括彼此分离的多个半导体堆叠块，并且其中所述多个半导体堆叠块包括半导体堆叠的第一块和第二半导体堆叠块; 执行分离步骤以将第一块半导体堆叠与第一衬底分离，并且第二块半导体堆叠保留在第一衬底上; 提供永久性基板，其包括第一表面上的第一表面，第二表面和第三块半导体堆叠; 以及将所述第一半导体堆叠块和所述第二半导体堆叠块之一接合到所述第二表面。

    LIGHT-EMITTING DEVICE
    8.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20160126433A1

    公开(公告)日：2016-05-05

    申请号：US14992785

    申请日：2016-01-11

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Shiuan-Leh LIN ,  Chih-Chiang LU ,  Chia-Liang HSU

    IPC: H01L33/58 ,  H01L33/32

    CPC classification number: H01L33/12 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/10 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0091

    Abstract: This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.

    Abstract translation: 本公开公开了一种制造发光器件的方法，包括以下步骤：提供衬底; 在基板上形成发光叠层; 在发光叠层上形成第一层; 提供永久性底物; 在永久性基板上形成第二层; 键合第一层和第二层以形成连接衬底和永久衬底的接合层; 其中所述结合层的折射率从所述发光叠层朝向所述永久基板减小。

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20190296186A1

    公开(公告)日：2019-09-26

    申请号：US16436544

    申请日：2019-06-10

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih CHIU

    IPC: H01L33/02 ,  H01L23/00 ,  H01L25/075 ,  H01L33/62 ,  H01L21/66

    Abstract: The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.

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