公开(公告)号：US09905733B2

公开(公告)日：2018-02-27

申请号：US15474476

申请日：2017-03-30

Applicant: EPISTAR CORPORATION

Inventor： Hong-Che Chen ,  Chien-Fu Shen ,  Chao-Hsing Chen ,  Yu-Chen Yang ,  Jia-Kuen Wang ,  Chih-Nan Lin

IPC: H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

公开(公告)号：US09620679B2

公开(公告)日：2017-04-11

申请号：US15067517

申请日：2016-03-11

Applicant: EPISTAR CORPORATION

Inventor： Hong-Che Chen ,  Chien-Fu Shen ,  Chao-Hsing Chen ,  Yu-Chen Yang ,  Jia-Kuen Wang ,  Chih-Nan Lin

IPC: H01L33/38 ,  H01L33/48 ,  H01L33/20 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

公开(公告)号：US09299893B2

公开(公告)日：2016-03-29

申请号：US14150418

申请日：2014-01-08

Applicant: Epistar Corporation

Inventor： Hong-Che Chen ,  Chien-Fu Shen ,  Chao-Hsing Chen ,  Yu-Chen Yang ,  Jia-Kuen Wang ,  Chih-Nan Lin

IPC: H01L33/38 ,  H01L33/48 ,  H01L33/20 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer.

Abstract translation: 发光装置包括：发光半导体堆叠，其包括凹部和台面，其中所述凹部包括底部，所述台面包括上表面; 在所述凹部中和所述台面的上表面的一部分上的第一绝缘层; 以及包括第一层和第二层的第一电极，其中所述第一层包括第一导电材料并且位于所述台面的上表面的另一部分上，并且所述第二层包括第二导电材料并且位于所述第一层上 。