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公开(公告)号：US09825090B2
公开(公告)日：2017-11-21
申请号：US15401850
申请日：2017-01-09
Applicant: EPISTAR CORPORATION
Inventor： Li-Ping Jou , Yu-Chen Yang , Jui-Hung Yeh
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first epitaxial unit and the second epitaxial unit; a conductive connecting layer disposed below the first epitaxial unit and the second epitaxial unit and surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.
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公开(公告)号：US09620679B2
公开(公告)日：2017-04-11
申请号：US15067517
申请日：2016-03-11
Applicant: EPISTAR CORPORATION
Inventor： Hong-Che Chen , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Jia-Kuen Wang , Chih-Nan Lin
CPC classification number: H01L33/38 , H01L33/20 , H01L33/40 , H01L33/405 , H01L33/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.
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公开(公告)号：US09299893B2
公开(公告)日：2016-03-29
申请号：US14150418
申请日：2014-01-08
Applicant: Epistar Corporation
Inventor： Hong-Che Chen , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Jia-Kuen Wang , Chih-Nan Lin
CPC classification number: H01L33/38 , H01L33/20 , H01L33/40 , H01L33/405 , H01L33/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer.
Abstract translation: 发光装置包括：发光半导体堆叠，其包括凹部和台面，其中所述凹部包括底部，所述台面包括上表面; 在所述凹部中和所述台面的上表面的一部分上的第一绝缘层; 以及包括第一层和第二层的第一电极，其中所述第一层包括第一导电材料并且位于所述台面的上表面的另一部分上，并且所述第二层包括第二导电材料并且位于所述第一层上 。
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公开(公告)号：US10658544B2
公开(公告)日：2020-05-19
申请号：US16382873
申请日：2019-04-12
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
IPC: H01L33/38 , H01L33/46 , H01L33/20 , H01L33/60 , H01L33/30 , H01L33/08 , H01L33/62 , H01L33/44 , H01L33/00
Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
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公开(公告)号：US09905733B2
公开(公告)日：2018-02-27
申请号：US15474476
申请日：2017-03-30
Applicant: EPISTAR CORPORATION
Inventor： Hong-Che Chen , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Jia-Kuen Wang , Chih-Nan Lin
CPC classification number: H01L33/38 , H01L33/20 , H01L33/40 , H01L33/405 , H01L33/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.
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Patent Agency Ranking
公开(公告)号：US09472725B2
公开(公告)日：2016-10-18
申请号：US14705453
申请日：2015-05-06
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
CPC classification number: H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protruding structures.
Abstract translation: 发光装置包括半导体层序列，其包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 多个突出结构; 半导体层中的多个倾斜沟槽序列并分别容纳多个突起结构; 所述第二半导体层上的电介质层和所述多个倾斜沟槽的内侧壁，其中所述电介质层包括垂直于所述半导体层序列的厚度方向的表面; 沿着所述多个倾斜沟槽的内侧壁形成并延伸到所述电介质层的表面的金属层，其中所述金属层通过所述电介质层与所述第二半导体层绝缘; 以及形成在所述多个突出结构上的第一电极。
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公开(公告)号：US08779449B2
公开(公告)日：2014-07-15
申请号：US14065330
申请日：2013-10-28
Applicant: Epistar Corporation
Inventor： Li-Ping Jou , Yu-Chen Yang , Jui-Hung Yeh
IPC: H01L33/48
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.
Abstract translation: 具有N个发光二极管单元（N≥3）的LED阵列包括永久基板，永久基板上的接合层，接合层上的第二导电层，第二导电层上的第二隔离层，交叉金属 所述第二隔离层上的第一隔离层，所述交叉金属层上的第一隔离层，所述第一隔离层上的导电连接层，所述导电连接层上的外延结构，以及所述外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。
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公开(公告)号：US10304999B2
公开(公告)日：2019-05-28
申请号：US15846773
申请日：2017-12-19
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
IPC: H01L33/08 , H01L33/62 , H01L33/38 , H01L33/20 , H01L33/60 , H01L33/30 , H01L33/46 , H01L33/44 , H01L33/00
Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
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公开(公告)号：US10026778B2
公开(公告)日：2018-07-17
申请号：US15727276
申请日：2017-10-06
Applicant: EPISTAR CORPORATION
Inventor： Li-Ping Jou , Yu-Chen Yang , Jui-Hung Yeh
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: A light-emitting structure includes an epitaxial structure including a plurality of trenches; a conductive connecting layer, disposed under the epitaxial structure; a first isolation layer; a crossover metal layer, disposed under the first isolation layer and including a plurality of protruding portions protruding into the epitaxial structure through the plurality of trenches; a second isolation layer, disposed under the crossover metal layer; a bonding layer disposed under the second isolation layer; a substrate, disposed under the bonding layer; and an electrode, electrically connected to the conductive connecting layer and disposed adjacent to the epitaxial structure in a cross-sectional view.
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公开(公告)号：US09876138B2
公开(公告)日：2018-01-23
申请号：US15273439
申请日：2016-09-22
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
IPC: H01L33/08 , H01L33/62 , H01L33/20 , H01L33/38 , H01L33/60 , H01L33/30 , H01L33/46 , H01L33/44 , H01L33/00
CPC classification number: H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
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