公开(公告)号：US11935981B2

公开(公告)日：2024-03-19

申请号：US17364175

申请日：2021-06-30

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih Su ,  Chia-Hsiang Chou ,  Wei-Chih Peng ,  Wen-Luh Liao ,  Chao-Shun Huang ,  Hsuan-Le Lin ,  Shih-Chang Lee ,  Mei Chun Liu ,  Chen Ou

IPC: H01L31/055 ,  H01L25/16 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/101 ,  H01L31/12

CPC classification number: H01L31/055 ,  H01L25/167 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/101 ,  H01L31/125

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.