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公开(公告)号：US11245060B2
公开(公告)日：2022-02-08
申请号：US16192292
申请日：2018-11-15
Applicant: EPISTAR CORPORATION
Inventor： Chih-Chiang Lu , Wei-Chih Peng , Shiau-Huei San , Min-Hsun Hsieh
IPC: H01L33/60 , H01L33/62 , H01L33/38 , H01L33/00 , H01L33/40 , H01L33/06 , H01L33/22 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/50 , H01L33/56 , H01L33/44
Abstract: A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.
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公开(公告)号：US20190103515A1
公开(公告)日：2019-04-04
申请号：US16189540
申请日：2018-11-13
Applicant: EPISTAR CORPORATION
Inventor： Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , Yen-Liang Kuo , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , Yu-Yao Lin
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/62
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wherein the semiconductor stack is located on one side of the bonding layer, and the conductive substrate is located on the other side of the bonding layer.
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公开(公告)号：US20180130924A1
公开(公告)日：2018-05-10
申请号：US15800537
申请日：2017-11-01
Applicant: EPISTAR CORPORATION
Inventor： Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , YEN-LIANG KUO , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , YU-YAO LIN
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/62
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a surrounding exposed region formed on peripheries of the semiconductor stack, exposing a surface of the first semiconductor layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surface of the first semiconductor layer in the surrounding exposed region; an electrode layer formed on the surrounding exposed region, surrounding the semiconductor stack, contacting the conductive layer and including an electrode pad not overlapping the semiconductor stack; an outside insulating layer covering a portion of the conductive layer and the electrode layer, including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate.
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公开(公告)号：US20170002463A1
公开(公告)日：2017-01-05
申请号：US15198649
申请日：2016-06-30
Applicant: EPISTAR CORPORATION
Inventor： Nai-Wen Fan , Shau-Yi Chen , Ai-Sen Liu , Zhi Zhong Ke , Chien-Bao Lin , Wen-Hao Zhuo , Feng-Zhi Chen , Chien-Cheng Kuo , Shih-Hao Chan , Chih-Hao Chen , Wei-Chih Peng , Chia-Liang Hsu
IPC: C23C16/455
CPC classification number: C23C16/45525 , C23C16/45536 , C23C16/45565 , C23C16/45574 , C23C16/50 , H01J37/3244
Abstract: A thin-film deposition apparatus comprises a chamber; a carrier in the chamber; a showerhead on the carrier, wherein the showerhead comprises multiple first gas-dispensing holes, multiple second gas-dispensing holes and multiple plasma-generating portions; and a first gas inlet system for providing a first process gas, wherein the first process gas outputted from the multiple first gas-dispensing holes.
Abstract translation: 薄膜沉积设备包括一个室; 在房间里的一个载体; 在所述载体上的喷头，其中所述喷头包括多个第一气体分配孔，多个第二气体分配孔和多个等离子体产生部分; 以及用于提供第一处理气体的第一气体入口系统，其中从多个第一气体分配孔输出的第一处理气体。
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公开(公告)号：US10573778B2
公开(公告)日：2020-02-25
申请号：US16247802
申请日：2019-01-15
Applicant: EPISTAR CORPORATION
Inventor： Chih-Hao Chen , Yi-Lun Chou , Wei-Chih Peng
Abstract: The present disclosure provides a semiconductor device including a carrier; a current blocking layer, formed on the carrier; a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer; a protective structure, formed on the function structure and exposing a portion of the surface; and an electrode, formed on the protective structure and exposing the portion of the surface.
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Patent Agency Ranking
公开(公告)号：US10304993B1
公开(公告)日：2019-05-28
申请号：US15863255
申请日：2018-01-05
Applicant: EPISTAR CORPORATION
Inventor： Yung-Hsiang Lin , Wei-Chih Peng
Abstract: The present invention discloses a light-emitting device and the manufacturing method thereof. The light-emitting device comprises: a substrate including a protrusion part and a base part; a lattice buffer layer formed on the substrate and including a first region substantially right above the protrusion part and a second region substantially right above the base part, wherein the first region includes a recess therein; a light-emitting stack formed on the lattice buffer layer and the recess; and electrodes formed on and electrically connected to the light-emitting stack.
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公开(公告)号：US09653666B2
公开(公告)日：2017-05-16
申请号：US15078761
申请日：2016-03-23
Applicant: EPISTAR CORPORATION
Inventor： Wei-Chih Peng , Jhih-Jheng Yang , Victor Liu , Hong-Yi Lei , Min Hsun Hsieh
CPC classification number: H01L33/22 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/60 , H01L2933/0058 , H01L2933/0091
Abstract: A method of manufacturing a light-emitting device comprises the steps of: providing a substrate; forming a mask block contacting the substrate and exposing a portion of the substrate; implanting an ion into the portion of the substrate to form an ion implantation region; and forming a semiconductor stack on the substrate such that multiple cavities are formed between the semiconductor stack and the ion implantation region; wherein the mask block comprises a material made of metal or oxide.
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公开(公告)号：US08946736B2
公开(公告)日：2015-02-03
申请号：US13731919
申请日：2012-12-31
Applicant: Epistar Corporation
Inventor： Wei-Chih Peng , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
CPC classification number: H01L33/60 , H01L31/056 , H01L33/007 , H01L33/10 , H01L33/12 , H01L51/5268 , H01L51/5271 , H01L51/5275
Abstract: An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.
Abstract translation: 一种光电子器件，包括：衬底和形成在衬底上的第一过渡堆叠，包括形成在衬底上的第一过渡层，其具有形成在第一过渡层内部的中空部件，形成在第一过渡层上的第二过渡层，以及反射器 杆形成在第二过渡层内。
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公开(公告)号：US11935981B2
公开(公告)日：2024-03-19
申请号：US17364175
申请日：2021-06-30
Applicant: EPISTAR CORPORATION
Inventor： Chu-Jih Su , Chia-Hsiang Chou , Wei-Chih Peng , Wen-Luh Liao , Chao-Shun Huang , Hsuan-Le Lin , Shih-Chang Lee , Mei Chun Liu , Chen Ou
IPC: H01L31/055 , H01L25/16 , H01L31/0224 , H01L31/0304 , H01L31/101 , H01L31/12
CPC classification number: H01L31/055 , H01L25/167 , H01L31/022408 , H01L31/03046 , H01L31/101 , H01L31/125
Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.
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公开(公告)号：US10559717B2
公开(公告)日：2020-02-11
申请号：US16189540
申请日：2018-11-13
Applicant: EPISTAR CORPORATION
Inventor： Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , Yen-Liang Kuo , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , Yu-Yao Lin
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wherein the semiconductor stack is located on one side of the bonding layer, and the conductive substrate is located on the other side of the bonding layer.
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