公开(公告)号：US20180374990A1

公开(公告)日：2018-12-27

申请号：US16051842

申请日：2018-08-01

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou Wang ,  Chun-Hsiang TU ,  Jing-Feng Huang

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/20 ,  H01L33/10 ,  H01L33/22 ,  H01L33/16

CPC classification number: H01L33/12 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0091

Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle α between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.

公开(公告)号：US20200303587A1

公开(公告)日：2020-09-24

申请号：US16897046

申请日：2020-06-09

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou Wang ,  Chun-Hsiang TU ,  Jing-Feng Huang

IPC: H01L33/12 ,  H01L33/20 ,  H01L33/00

Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle α between thereof.

公开(公告)号：US11158762B2

公开(公告)日：2021-10-26

申请号：US16897046

申请日：2020-06-09

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai Chao ,  Sen-Jung Hsu ,  Tao-Chi Chang ,  Wei-Chih Wen ,  Ou Chen ,  Yu-Shou Wang ,  Chun-Hsiang Tu ,  Jing-Feng Huang

IPC: H01L33/12 ,  H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/10 ,  H01L33/16

Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle α between thereof.

公开(公告)号：US10069037B2

公开(公告)日：2018-09-04

申请号：US15299754

申请日：2016-10-21

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai Chao ,  Sen-Jung Hsu ,  Tao-Chi Chang ,  Wei-Chih Wen ,  Ou Chen ,  Yu-Shou Wang ,  Chun-Hsiang Tu ,  Jing-Feng Huang

IPC: H01L27/15 ,  H01L29/06 ,  H01L29/04 ,  H01L33/00 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/10 ,  H01L33/16

Abstract: A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle α between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof.

公开(公告)号：US12068433B2

公开(公告)日：2024-08-20

申请号：US17496132

申请日：2021-10-07

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai Chao ,  Sen-Jung Hsu ,  Tao-Chi Chang ,  Wei-Chih Wen ,  Ou Chen ,  Yu-Shou Wang ,  Chun-Hsiang Tu ,  Jing-Feng Huang

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/20 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22

CPC classification number: H01L33/12 ,  H01L33/005 ,  H01L33/007 ,  H01L33/20 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L2933/0091

Abstract: A light-emitting device includes: a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack comprises a dislocation stop layer; wherein the dislocation stop layer comprises AlGaN; and wherein the first side wall and the second portion of the top surface form an acute angle α between thereof.

公开(公告)号：US10790412B2

公开(公告)日：2020-09-29

申请号：US16259410

申请日：2019-01-28

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai Chao ,  Sen-Jung Hsu ,  Tao-Chi Chang ,  Wei-Chih Wen ,  Ou Chen ,  Chun-Hsiang Tu ,  Yu-Shou Wang ,  Jing-Feng Huang

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/12 ,  H01L33/20 ,  H01L33/10 ,  H01L33/16

Abstract: A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle α between thereof, 30°≤α≤80°.

公开(公告)号：US10714657B2

公开(公告)日：2020-07-14

申请号：US16051842

申请日：2018-08-01

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai Chao ,  Sen-Jung Hsu ,  Tao-Chi Chang ,  Wei-Chih Wen ,  Ou Chen ,  Yu-Shou Wang ,  Chun-Hsiang Tu ,  Jing-Feng Huang

IPC: H01L33/12 ,  H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/10 ,  H01L33/16

Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle α between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.