中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.022 seconds)

    Light-emitting device and manufacturing method thereof
    6.
    发明授权
    Light-emitting device and manufacturing method thereof 有权

    公开(公告)号：US10790412B2

    公开(公告)日：2020-09-29

    申请号：US16259410

    申请日：2019-01-28

    Applicant: EPISTAR CORPORATION

    Inventor： Yen-Tai Chao ,  Sen-Jung Hsu ,  Tao-Chi Chang ,  Wei-Chih Wen ,  Ou Chen ,  Chun-Hsiang Tu ,  Yu-Shou Wang ,  Jing-Feng Huang

    IPC: H01L33/22 ,  H01L33/00 ,  H01L33/12 ,  H01L33/20 ,  H01L33/10 ,  H01L33/16

    Abstract: A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle α between thereof, 30°≤α≤80°.

    Light-emitting device and manufacturing method thereof
    7.
    发明授权
    Light-emitting device and manufacturing method thereof 有权

    公开(公告)号：US10714657B2

    公开(公告)日：2020-07-14

    申请号：US16051842

    申请日：2018-08-01

    Applicant: EPISTAR CORPORATION

    Inventor： Yen-Tai Chao ,  Sen-Jung Hsu ,  Tao-Chi Chang ,  Wei-Chih Wen ,  Ou Chen ,  Yu-Shou Wang ,  Chun-Hsiang Tu ,  Jing-Feng Huang

    IPC: H01L33/12 ,  H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/10 ,  H01L33/16

    Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle α between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10403794B2

    公开(公告)日：2019-09-03

    申请号：US15938855

    申请日：2018-03-28

    Applicant: EPISTAR CORPORATION

    Inventor： Yu-Shou Wang ,  Dian-Ying Hu

    IPC: H01L33/32 ,  H01L33/02 ,  H01L33/04

    Abstract: The semiconductor device includes a first conductivity-type semiconductor structure comprising a first stack and a second stack, wherein the first stack comprises alternate first layers and second layers, the second stack comprises alternate third layers and fourth layers. The semiconductor device includes a second conductivity-type semiconductor structure on the first conductivity-type semiconductor and includes an active structure between the first conductivity-type semiconductor structure and the second conductivity-type semiconductor structure. The first stack is between the active structure and the second stack, and a first difference between a maximum of the first doping concentration of one of the first layers and a minimum of the second doping concentration of one of the second layers is less than a second difference between a maximum of the third doping concentration of one of the third layers and a minimum of the fourth doping concentration of one of the fourth layers.

Patent Agency Ranking