公开(公告)号：US11677046B2

公开(公告)日：2023-06-13

申请号：US17879547

申请日：2022-08-02

Applicant: EPISTAR CORPORATION

Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

IPC: H01L33/42 ,  H01L33/40 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/60 ,  H01L33/62 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/42 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/40

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20170077358A1

公开(公告)日：2017-03-16

申请号：US15359372

申请日：2016-11-22

Applicant: Epistar Corporation

Inventor： Po-Shun Chiu ,  De-Shan Kuo ,  Chun-Hsiang Tu ,  Chun-Teng Ko

IPC: H01L33/46 ,  H01L33/06

CPC classification number: H01L33/46 ,  F21K9/232 ,  F21K9/237 ,  F21V3/00 ,  F21V3/02 ,  F21V5/04 ,  F21V13/02 ,  F21V29/77 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L33/06 ,  H01L33/405 ,  H01L33/60

Abstract: A light-emitting element comprises a sapphire substrate, a light-emitting stacked layer on the sapphire substrate, a first window layer under the sapphire substrate, and a DBR under the first window layer, wherein a material of the first window layer is an insulating material, wherein a thickness of the first window layer is between 300 nm and 1000 nm, wherein the DBR comprises a plurality of sublayers, and wherein a material of one of the plurality of sublayers is the same as the insulating material of the first window layer.

Abstract translation: 发光元件包括蓝宝石衬底，蓝宝石衬底上的发光层叠层，蓝宝石衬底下方的第一窗口层和第一窗口层下方的DBR，其中第一窗口层的材料为绝缘体 材料，其中所述第一窗口层的厚度在300nm和1000nm之间，其中所述DBR包括多个子层，并且其中所述多个子层中的一个的材料与所述第一窗口层的绝缘材料相同 。

公开(公告)号：US20150349210A1

公开(公告)日：2015-12-03

申请号：US14825899

申请日：2015-08-13

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Chun-Teng Ko ,  Po-Shun Chiu ,  Chia-Liang Hsu

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

Abstract translation: 发光二极管结构包括第一半导体层; 第一半导体层下面的第二半导体层; 在所述第一半导体层和所述第二半导体层之间的用于发光的发光层; 用于引线接合的第一半导体层上的第一电焊盘; 连接到第一电焊盘的第一延伸部; 以及覆盖所述第一延伸部并暴露所述第一电焊盘的第一反射层，其中所述第一电焊盘和所述第一延伸部具有相同的厚度，并且所述第一反射层的反射率高于所述第一延伸部的反射率。

公开(公告)号：US09112117B2

公开(公告)日：2015-08-18

申请号：US13836681

申请日：2013-03-15

Applicant: EPISTAR CORPORATION

Inventor： Chia-Liang Hsu ,  Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Ting-Chia Ko ,  Po-Shun Chiu

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.

Abstract translation: 一种发光二极管结构，包括：基板; 在所述基板上的发光半导体堆叠，其中，所述发光半导体堆叠包括第一半导体层，与所述第一半导体层具有不同极性的第二半导体层，以及所述第一半导体层与所述第二半导体层之间的发光层 半导体层; 在所述基板上的第一电焊盘，其中所述第一电焊盘与所述发光半导体堆叠分离并且电连接到所述第一半导体层; 以及在所述基板上的第二电焊盘，其中所述第二电焊盘离开所述发光半导体堆叠并且电连接到所述第二半导体层，其中所述第一电焊盘和所述第二电焊盘不高于所述发光 半导体堆叠

公开(公告)号：US10038129B2

公开(公告)日：2018-07-31

申请号：US15854462

申请日：2017-12-26

Applicant: EPISTAR CORPORATION

Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

IPC: H01L29/18 ,  H01L33/62 ,  H01L33/30 ,  H01L33/60 ,  H01L27/15 ,  H01L33/42 ,  H01L33/08 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US09640731B2

公开(公告)日：2017-05-02

申请号：US14825899

申请日：2015-08-13

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Chun-Teng Ko ,  Po-Shun Chiu ,  Chia-Liang Hsu

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

公开(公告)号：US09548420B2

公开(公告)日：2017-01-17

申请号：US14691221

申请日：2015-04-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Hsiang Tu ,  De-Shan Kuo ,  Po-Shun Chiu ,  Chi-Shiang Hsu

IPC: H01L27/15 ,  H01L29/06 ,  H01L29/10 ,  H01L27/14 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/10 ,  H01L33/16 ,  H01L2933/0091

Abstract: A light-emitting device comprises a substrate comprising a top surface; a light-emitting stack formed on a portion of the top surface of the substrate; and a plurality of pores formed in an area of the substrate, wherein the area is under another portion of the top surface where the light-emitting stack is not formed thereon.

Abstract translation: 发光装置包括：基板，其包括顶表面; 形成在所述基板的上表面的一部分上的发光叠层; 以及形成在所述基板的区域中的多个孔，其中所述区域在其上未形成有所述发光叠层的顶表面的另一部分下。

公开(公告)号：US09508901B2

公开(公告)日：2016-11-29

申请号：US14013166

申请日：2013-08-29

Applicant: Epistar Corporation

Inventor： Juin-Yang Chen ,  De-Shan Kuo ,  Chun-Hsiang Tu ,  Po-Shun Chiu ,  Chien-Kai Chung ,  Hui-Chun Yeh ,  Min-Yen Tsai ,  Tsun-Kai Ko ,  Chun-Teng Ko

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/42 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/42

Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.

Abstract translation: 发光器件包括：第一半导体层; 透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层; 以及形成在所述透明导电氧化物层上的金属层，其中所述金属层可透过从所述有源层发射的光并且包括图案。

公开(公告)号：US09231164B2

公开(公告)日：2016-01-05

申请号：US13861449

申请日：2013-04-12

Applicant: EPISTAR CORPORATION

Inventor： Ting-Chia Ko ,  De-Shan Kuo ,  Chun-Hsiang Tu ,  Po-Shun Chiu ,  Chien-Kai Chung ,  Hui-Chun Yeh ,  Min-Yen Tsai ,  Tsun-Kai Ko

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/22 ,  H01L33/40

CPC classification number: H01L33/42 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/40 ,  H01L33/405

Abstract: A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.

Abstract translation: 发光器件包括第一半导体层; 以及透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层。

公开(公告)号：US11158762B2

公开(公告)日：2021-10-26

申请号：US16897046

申请日：2020-06-09

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai Chao ,  Sen-Jung Hsu ,  Tao-Chi Chang ,  Wei-Chih Wen ,  Ou Chen ,  Yu-Shou Wang ,  Chun-Hsiang Tu ,  Jing-Feng Huang

IPC: H01L33/12 ,  H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/10 ,  H01L33/16

Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle α between thereof.