公开(公告)号：US20170040492A1

公开(公告)日：2017-02-09

申请号：US15332730

申请日：2016-10-24

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih CHIU ,  Shih-I CHEN ,  You-Hsien CHANG ,  Hao-Min KU ,  Ching-Yuan TSAI ,  Kuan-Chih KUO ,  Chih-Hung HSIAO ,  Rong-Ren LEE

IPC: H01L33/22 ,  H01L33/60 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/22 ,  H01L33/02 ,  H01L33/025 ,  H01L33/10 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/305 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.

Abstract translation: 半导体发光器件包括用于发射光的外延结构，其包括边缘，第一部分和围绕第一部分的第二部分，其中第二部分中的掺杂材料的浓度高于掺杂材料的浓度 在第一部分中，外延结构上的主要光提取表面包括对应于第一部分的第一光提取区域和对应于第二部分和边缘的第二光提取区域，其中第二部分在 边缘和第一部分。

公开(公告)号：US20180374992A1

公开(公告)日：2018-12-27

申请号：US16043981

申请日：2018-07-24

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih CHIU ,  Shih-I CHEN ,  You-Hsien CHANG ,  Hao-Min KU ,  Ching-Yuan TSAI ,  Kuan-Chih KUO ,  Chih-Hung HSIAO ,  Rong-Ren LEE

IPC: H01L33/22 ,  H01L33/24 ,  H01L33/10 ,  H01L33/02 ,  H01L33/30 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

公开(公告)号：US20180013037A1

公开(公告)日：2018-01-11

申请号：US15699658

申请日：2017-09-08

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih CHIU ,  Shih-I CHEN ,  You-Hsien CHANG ,  Hao-Min KU ,  Ching-Yuan TSAI ,  Kuan-Chih KUO ,  Chih-Hung HSIAO ,  Rong-Ren LEE

IPC: H01L33/22 ,  H01L33/10 ,  H01L33/02 ,  H01L33/38 ,  H01L33/24 ,  H01L33/30 ,  H01L33/42 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40

CPC classification number: H01L33/22 ,  H01L33/02 ,  H01L33/025 ,  H01L33/10 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/305 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.