公开(公告)号：US20240136463A1

公开(公告)日：2024-04-25

申请号：US18391644

申请日：2023-12-20

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  A61B5/021 ,  A61B5/024 ,  A61B5/145 ,  A61B5/1455 ,  G01J3/10 ,  H01L25/16 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0304

CPC classification number: H01L31/167 ,  A61B5/02141 ,  A61B5/02427 ,  A61B5/02433 ,  A61B5/14546 ,  A61B5/14552 ,  G01J3/10 ,  H01L25/167 ,  H01L31/02005 ,  H01L31/02325 ,  H01L31/03046

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.

公开(公告)号：US20250006864A1

公开(公告)日：2025-01-02

申请号：US18756777

申请日：2024-06-27

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shih-Chang LEE ,  Wei-Chu LIAO ,  Mei-Chun LIU ,  Hui-Ching FENG ,  Zhen-Kai KAO ,  Yih-Hua RENN ,  Min-Hsun HSIEH

IPC: H01L33/30 ,  H01L33/38

Abstract: A semiconductor device is provided, which includes an epitaxial structure, a first contact electrode and a second contact electrode. The epitaxial structure includes a first semiconductor structure, a second semiconductor structure and an active region. The first semiconductor structure includes a first semiconductor contact layer. The second semiconductor structure includes a second semiconductor contact layer. The active region is located between the first semiconductor structure and the second semiconductor structure. The first contact electrode is located on the second semiconductor contact layer and directly contacts the first semiconductor contact layer. The second contact electrode is located on the second semiconductor contact layer and directly contacts the second semiconductor contact layer. The first semiconductor contact layer has a conductivity type of n-type and includes a first group III-V semiconductor material. The second semiconductor contact layer has a conductivity type of p-type and includes a second group III-V semiconductor material.

公开(公告)号：US20200168757A1

公开(公告)日：2020-05-28

申请号：US16697340

申请日：2019-11-27

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  H01L31/0304 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16 ,  G01J3/10 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.

公开(公告)号：US20220059717A1

公开(公告)日：2022-02-24

申请号：US17510522

申请日：2021-10-26

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  H01L31/0304 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145 ,  G01J3/10

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.