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    LIGHT-EMITTING DEVICE
    1.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140021505A1

    公开(公告)日：2014-01-23

    申请号：US14038969

    申请日：2013-09-27

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Shiuan-Leh LIN ,  Chih-Chiang LU ,  Chia-Liang HSU

    IPC: H01L33/46

    CPC classification number: H01L33/12 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/10 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0091

    Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.

    Abstract translation: 本公开公开了一种发光装置。 发光装置包括：基板; 形成在所述基板上的中间层; 透明结合层; 通过透明结合层与半导体层接合的第一半导体窗口层; 以及形成在第一半导体窗口层上的发光叠层。 中间层具有基板的折射率与第一半导体窗口层的折射率之间的折射率。

    LIGHT-EMITTING DEVICE
    2.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20160126433A1

    公开(公告)日：2016-05-05

    申请号：US14992785

    申请日：2016-01-11

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Shiuan-Leh LIN ,  Chih-Chiang LU ,  Chia-Liang HSU

    IPC: H01L33/58 ,  H01L33/32

    CPC classification number: H01L33/12 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/10 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0091

    Abstract: This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.

    Abstract translation: 本公开公开了一种制造发光器件的方法，包括以下步骤：提供衬底; 在基板上形成发光叠层; 在发光叠层上形成第一层; 提供永久性底物; 在永久性基板上形成第二层; 键合第一层和第二层以形成连接衬底和永久衬底的接合层; 其中所述结合层的折射率从所述发光叠层朝向所述永久基板减小。

    SEMICONDUCTOR EPITAXIAL STRUCTURES AND SEMICONDUCTOR OPTOELECTRONIC DEVICES COMPRISING THE SAME
    6.
    发明申请
    SEMICONDUCTOR EPITAXIAL STRUCTURES AND SEMICONDUCTOR OPTOELECTRONIC DEVICES COMPRISING THE SAME 审中-公开
    半导体外延结构和包含其的半导体光电装置

    公开(公告)号：US20150179857A1

    公开(公告)日：2015-06-25

    申请号：US14632167

    申请日：2015-02-26

    Applicant: EPISTAR CORPORATION

    Inventor： Shiuan-Leh LIN

    IPC: H01L31/0687 ,  H01L31/0725 ,  H01L33/30 ,  H01L31/0236 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/0735

    CPC classification number: H01L31/0687 ,  H01L21/0237 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02513 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/0725 ,  H01L31/0735 ,  H01L33/04 ,  H01L33/12 ,  H01L33/22 ,  H01L33/30 ,  Y02E10/542 ,  Y02E10/544

    Abstract: An optoelectronic device comprises a substrate; a converting structure for converting energy between light and electric current over the substrate; and a semiconductor buffer layer combination between the substrate and the converting structure, the semiconductor buffer layer combination comprising multiple first semiconductor layers and multiple second semiconductor layers alternately stacked, wherein each of the multiple first semiconductor layers comprises a first element, each of the multiple second semiconductor layers comprises a second element different from the first element, and the composition ratio of the first element gradually increases or decreases with an increase of the distance between the first semiconductor layers and the substrate.

    Abstract translation: 光电器件包括衬底; 用于在基板上转换光和电流之间的能量的转换结构; 以及在所述基板和所述转换结构之间的半导体缓冲层组合，所述半导体缓冲层组合包括交替堆叠的多个第一半导体层和多个第二半导体层，其中所述多个第一半导体层中的每一个包括第一元件， 半导体层包括与第一元素不同的第二元素，并且第一元素的组成比随着第一半导体层和衬底之间的距离的增加而逐渐增加或减小。

    LIGHT-EMITTING DEVICE
    7.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140048768A1

    公开(公告)日：2014-02-20

    申请号：US13970949

    申请日：2013-08-20

    Applicant: EPISTAR CORPORATION

    Inventor： Rong-Ren LEE ,  Chien-Fu HUANG ,  Shih-Chang LEE ,  Yi-Ming CHEN ,  Shiuan-Leh LIN

    IPC: H01L33/04

    CPC classification number: H01L33/04 ,  H01L33/06

    Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

    Abstract translation: 本文公开的发光器件包括衬底，形成在衬底上并包括第一量子阱，第二量子阱和设置在第一量子阱和第二量子阱之间的势垒层的有源层。 阻挡层包括与第一量子阱相邻的第一区域，与第二量子阱相邻的第三区域和设置在第一区域和第三区域之间并包含Sb的第二区域。

    OPTOELECTRONIC DEVICE
    9.
    发明申请
    OPTOELECTRONIC DEVICE 有权
    光电器件

    公开(公告)号：US20140312370A1

    公开(公告)日：2014-10-23

    申请号：US14257716

    申请日：2014-04-21

    Applicant: EPISTAR CORPORATION

    Inventor： Shiuan-Leh LIN ,  Shih-Chang LEE

    IPC: H01L33/12 ,  H01L31/0352

    CPC classification number: H01L33/12 ,  H01L21/02461 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02543 ,  H01L31/03046 ,  H01L31/06875 ,  H01L31/1844 ,  Y02E10/544

    Abstract: An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant.

    Abstract translation: 一种光电器件，包括具有第一晶格常数的第一半导体层; 具有第二晶格常数的第二半导体层，其中所述第二晶格常数小于所述第一晶格常数; 以及形成在第一半导体层和第二半导体层之间的第一缓冲层，其中在第二半导体层附近的第一缓冲层的一侧的晶格常数小于第二晶格常数。

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