SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20250006864A1

    公开(公告)日:2025-01-02

    申请号:US18756777

    申请日:2024-06-27

    Abstract: A semiconductor device is provided, which includes an epitaxial structure, a first contact electrode and a second contact electrode. The epitaxial structure includes a first semiconductor structure, a second semiconductor structure and an active region. The first semiconductor structure includes a first semiconductor contact layer. The second semiconductor structure includes a second semiconductor contact layer. The active region is located between the first semiconductor structure and the second semiconductor structure. The first contact electrode is located on the second semiconductor contact layer and directly contacts the first semiconductor contact layer. The second contact electrode is located on the second semiconductor contact layer and directly contacts the second semiconductor contact layer. The first semiconductor contact layer has a conductivity type of n-type and includes a first group III-V semiconductor material. The second semiconductor contact layer has a conductivity type of p-type and includes a second group III-V semiconductor material.

    MONOLITHIC ARRAY CHIP
    2.
    发明申请

    公开(公告)号:US20240405054A1

    公开(公告)日:2024-12-05

    申请号:US18679369

    申请日:2024-05-30

    Abstract: A monolithic array chip comprises a first semiconductor layer; a common electrode located on the first semiconductor layer; a first light-emitting unit with a first electrode located on the first semiconductor layer; a second light-emitting unit with a second electrode located on the first semiconductor layer; a third light-emitting unit with a third electrode located on the first semiconductor layer, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are separated from each other by a trench.

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