公开(公告)号：US20140110632A1

公开(公告)日：2014-04-24

申请号：US14057073

申请日：2013-10-18

Applicant: EPISTAR CORPORATION

Inventor： Chiao-Wen YEH ,  Ru-Shi LIU

IPC: C09K11/77

CPC classification number: C09K11/7734 ,  C09K11/0883

Abstract: Provided is a metal oxonitridosilicate phosphor of a general formula M5−z−a−bAl3+xSi23−xN37−x−2aOx+2a: Euz, Mnb, wherein M is one or more alkaline earth metals; 0≦x≦7; 0≦a≦1; 0

Abstract translation: 本发明提供通式为M5-z-a-bAl3 + xSi23-xN37-x-2aOx + 2a：Euz，Mnb的金属氧磷硅酸盐荧光体，其中M为一种或多种碱土金属; 0＆nlE; x＆nlE; 7; 0＆nlE; a＆nlE; 1; 0

公开(公告)号：US20140048833A1

公开(公告)日：2014-02-20

申请号：US14062154

申请日：2013-10-24

Applicant: Epistar Corporation

Inventor： Chih-Chiang LU ,  Shu-Ting HSU ,  Yen-Wen CHEN ,  Chien-Yuan WANG ,  Ru-Shi LIU ,  Min-Hsun HSIEH

IPC: H01L33/50

CPC classification number: H01L33/504 ,  H01L27/156 ,  H01L33/44 ,  H01L33/508 ,  H01L2224/18

Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

Abstract translation: 本申请公开了一种具有窄波长分布的发光器件及其制造方法。 具有窄主波长分布的发光器件至少包括衬底，在衬底上的多个发光层叠层和发光层叠层上的多个波长转换层，其中发光层叠层 发射具有第一主波长变化的第一光; 波长转换层吸收第一光并将第一光转换成具有第二主波长变化的第二光; 并且第一主波长变化大于第二主波长变化。

公开(公告)号：US20140178758A1

公开(公告)日：2014-06-26

申请号：US13726438

申请日：2012-12-24

Applicant: EPISTAR CORPORATION

Inventor： Chih-Jung CHEN ,  Shu-Fen HU ,  Ru-Shi LIU ,  Tai-Feng HUNG

IPC: H01M4/505 ,  H01M4/525 ,  H01M4/583

CPC classification number: H01M4/133 ,  H01M4/0426 ,  H01M4/131 ,  H01M4/134 ,  H01M4/137 ,  H01M4/139 ,  H01M4/366 ,  H01M10/052 ,  H01M10/0585 ,  Y10T29/49108

Abstract: Disclosed is a device for producing an electric current and a method for making the same. The device for producing an electric current, comprising: an anode comprising a stack formed by alternately stacking of at least one Si layer and at least one carbon material layer, and a LiPON layer on the stack; a cathode; and an electrolyte between the anode and the cathode.

Abstract translation: 公开了一种用于制造电流的装置及其制造方法。 一种用于产生电流的装置，包括：阳极，其包括通过交替堆叠至少一个Si层和至少一个碳材料层而形成的叠层，以及堆叠上的LiPON层; 阴极 以及阳极和阴极之间的电解质。

公开(公告)号：US20140183583A1

公开(公告)日：2014-07-03

申请号：US14065301

申请日：2013-10-28

Applicant: Epistar Corporation

Inventor： Ru-Shi LIU ,  Chih-Ming WANG

IPC: H01L33/50

CPC classification number: H01L33/502 ,  C09K11/0883 ,  C09K11/7706 ,  C09K11/7731 ,  C09K11/7734 ,  C09K11/7769 ,  C09K11/7774 ,  C09K11/88 ,  H05B33/14 ,  Y10T428/2982

Abstract: This disclosure discloses a wavelength converting material. The wavelength converting material comprises a plurality of wavelength converting particles, the wavelength converting particles having an average particle size greater than 5 μm, and wherein each of the wavelength converting particles has a particle size. 90% of the wavelength converting particles have the particle size smaller than a μm; 50% of the wavelength converting particles have the particle size smaller than b μm; and 10% of the wavelength converting particles have the particle size smaller than c μm; wherein (a−c)/b≦0.5.

Abstract translation: 本公开公开了一种波长转换材料。 波长转换材料包括多个波长转换颗粒，波长转换颗粒具有大于5μm的平均粒度，并且其中每个波长转换颗粒具有粒径。 90％的波长转换颗粒具有小于1μm的粒度; 50％的波长转换颗粒具有小于bμm的粒度; 10％的波长转换粒子的粒径小于cμm; 其中（a-c）/b＆nlE; 0.5。

公开(公告)号：US20180062043A1

公开(公告)日：2018-03-01

申请号：US15686314

申请日：2017-08-25

Applicant: EPISTAR CORPORATION

Inventor： Chang-Tai HISAO ,  I-Lun MA ,  Hao-Yu CHEN ,  Shu-Fen HU ,  Ru-Shi LIU ,  Chih-Ming WANG ,  Chun-Yuan CHEN ,  Yih-Hua RENN ,  Chien-Hsin WANG ,  Yung-Hsiang LIN

IPC: H01L33/42 ,  H01L33/32

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.