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    WAVELENGTH CONVERTING MATERIAL AND APPLICATION THEREOF
    2.
    发明申请
    WAVELENGTH CONVERTING MATERIAL AND APPLICATION THEREOF 有权
    波长转换材料及其应用

    公开(公告)号：US20140183583A1

    公开(公告)日：2014-07-03

    申请号：US14065301

    申请日：2013-10-28

    Applicant: Epistar Corporation

    Inventor： Ru-Shi LIU ,  Chih-Ming WANG

    IPC: H01L33/50

    CPC classification number: H01L33/502 ,  C09K11/0883 ,  C09K11/7706 ,  C09K11/7731 ,  C09K11/7734 ,  C09K11/7769 ,  C09K11/7774 ,  C09K11/88 ,  H05B33/14 ,  Y10T428/2982

    Abstract: This disclosure discloses a wavelength converting material. The wavelength converting material comprises a plurality of wavelength converting particles, the wavelength converting particles having an average particle size greater than 5 μm, and wherein each of the wavelength converting particles has a particle size. 90% of the wavelength converting particles have the particle size smaller than a μm; 50% of the wavelength converting particles have the particle size smaller than b μm; and 10% of the wavelength converting particles have the particle size smaller than c μm; wherein (a−c)/b≦0.5.

    Abstract translation: 本公开公开了一种波长转换材料。 波长转换材料包括多个波长转换颗粒，波长转换颗粒具有大于5μm的平均粒度，并且其中每个波长转换颗粒具有粒径。 90％的波长转换颗粒具有小于1μm的粒度; 50％的波长转换颗粒具有小于bμm的粒度; 10％的波长转换粒子的粒径小于cμm; 其中（a-c）/b＆nlE; 0.5。

    MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE AND LIGHT MIXING DEVICE
    3.
    发明申请
    MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE AND LIGHT MIXING DEVICE 有权
    发光装置和光混合装置的制造方法

    公开(公告)号：US20140034988A1

    公开(公告)日：2014-02-06

    申请号：US14047778

    申请日：2013-10-07

    Applicant: Epistar Corporation

    Inventor： Min-Hsun HSIEH ,  Chien-Yuan WANG ,  Tsung-Xian LEE ,  Chih-Ming WANG ,  Ming-Chi HSU ,  Han-Min WU

    IPC: H01L33/58

    CPC classification number: H01L33/58 ,  H01L33/46 ,  H01L33/507 ,  H01L33/56 ,  H01L2933/0091

    Abstract: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element; a second light guide layer covering the first light guide layer; a low refractive index layer between the first light guide layer and the second light guide layer to reflect the light from the second light guide layer; and a wavelength conversion layer covering the second light guide layer; wherein the low refractive index layer has a refractive index smaller than one of the refractive indices of first light guide layer and the second light guide layer.

    Abstract translation: 公开了一种发光装置，包括：载体; 设置在所述载体上的发光元件; 覆盖所述发光元件的第一导光层; 覆盖所述第一导光层的第二导光层; 第一导光层和第二导光层之间的低折射率层，以反射来自第二导光层的光; 以及覆盖所述第二导光层的波长转换层; 其中所述低折射率层的折射率小于所述第一导光层和所述第二导光层的折射率之一。

    MONOLITHIC ARRAY CHIP
    4.
    发明申请
    MONOLITHIC ARRAY CHIP 有权

    公开(公告)号：US20240405054A1

    公开(公告)日：2024-12-05

    申请号：US18679369

    申请日：2024-05-30

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Chih-Ming WANG ,  Jan-Way CHIEN ,  Hui-Ching FENG ,  Yu-Chi WANG ,  Hsia-Ching CHENG

    IPC: H01L27/15 ,  H01L25/13 ,  H01L33/50

    Abstract: A monolithic array chip comprises a first semiconductor layer; a common electrode located on the first semiconductor layer; a first light-emitting unit with a first electrode located on the first semiconductor layer; a second light-emitting unit with a second electrode located on the first semiconductor layer; a third light-emitting unit with a third electrode located on the first semiconductor layer, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are separated from each other by a trench.

    LIGHT-EMITTING DEVICE
    5.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20180062043A1

    公开(公告)日：2018-03-01

    申请号：US15686314

    申请日：2017-08-25

    Applicant: EPISTAR CORPORATION

    Inventor： Chang-Tai HISAO ,  I-Lun MA ,  Hao-Yu CHEN ,  Shu-Fen HU ,  Ru-Shi LIU ,  Chih-Ming WANG ,  Chun-Yuan CHEN ,  Yih-Hua RENN ,  Chien-Hsin WANG ,  Yung-Hsiang LIN

    IPC: H01L33/42 ,  H01L33/32

    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.

    METHOD OF MAKING A LIGHT EMITTING DEVICE AND A LIGHT EMITTING DEVICE MADE THEREOF
    9.
    发明申请
    METHOD OF MAKING A LIGHT EMITTING DEVICE AND A LIGHT EMITTING DEVICE MADE THEREOF 有权
    制造发光装置的方法及其发光装置

    公开(公告)号：US20150214419A1

    公开(公告)日：2015-07-30

    申请号：US14678700

    申请日：2015-04-03

    Applicant: Epistar Corporation

    Inventor： Ming-Chi HSU ,  Chih-Ming WANG ,  Chien-Yuan WANG

    IPC: H01L33/00

    CPC classification number: H01L33/005 ,  H01L33/0095 ,  H01L33/505 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2933/0025 ,  H01L2933/0041

    Abstract: This disclosure discloses a method of making a light-emitting device. The method comprises forming a plurality of light-emitting chips, wherein each of the light-emitting chips comprising an epitaxial structure and an electrode formed on the epitaxial structure; forming a protection layer on the electrode in each of the light-emitting chips; forming a plurality of light-emitting groups by collecting the light-emitting chips, wherein each of the light-emitting groups having substantially the same opto-electrical characteristics; forming a wavelength converted layer in each of the light-emitting groups to cover the epitaxial structure and the protection layer; and removing the wavelength converted layer on the protection layer to expose the protection layer.

    Abstract translation: 本公开公开了一种制造发光器件的方法。 该方法包括形成多个发光芯片，其中每个发光芯片包括外延结构和形成在外延结构上的电极; 在每个发光芯片中的电极上形成保护层; 通过收集发光芯片形成多个发光基团，其中每个发光基团具有基本上相同的光电特性; 在每个发光基团中形成波长转换层以覆盖外延结构和保护层; 以及去除保护层上的波长转换层以使保护层露出。

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