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公开(公告)号:US20240162382A1
公开(公告)日:2024-05-16
申请号:US18506698
申请日:2023-11-10
Applicant: EPISTAR CORPORATION
Inventor: Wu-Tsung LO , Chih-Hao CHEN , Wei-Che WU , Heng-Ying CHO , Tsun-Kai KO
Abstract: The present disclosure provides a light-emitting package. The light-emitting package includes a main body, a cavity disposed in the cavity, a base plane in the cavity and a light-emitting element. The light-emitting element is disposed in the cavity and connected to the base plane. The light-emitting element includes a substrate and a semiconductor stack on the substrate. The substrate includes a side wall, and the side wall incudes a first cutting trace. The main body includes a step portion disposed in the cavity and it surrounds the light-emitting element. The step portion comprises a first height relative to base plane, and the first cutting trace comprises a second height relative to the base plane. The second height is greater than the first height.
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公开(公告)号:US20240250210A1
公开(公告)日:2024-07-25
申请号:US18416277
申请日:2024-01-18
Applicant: EPISTAR CORPORATION
Inventor: Chia-Che LIAO , Chih-Hao CHEN , Wei-Che WU , Sheng-Hao WU , Siou-Huei YANG
Abstract: A light-emitting device includes a substrate comprising an upper surface, a plurality of side surfaces, and a semiconductor stack located on the upper surface. The substrate includes a hexagonal crystal structure. The plurality of side surfaces includes a first side surface. The first side surface is tilted away from a m-plane of the hexagonal crystal structure, and an acute angle is formed between the first side surface and the m-plane. The first side surface includes a first modified stripe, and the first modified stripe includes a plurality of first modified regions. A pitch is between the adjacent first modified regions, and the pitch is not less than 5 μm. The first side surface comprises a folded structure.
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公开(公告)号:US20240339564A1
公开(公告)日:2024-10-10
申请号:US18625617
申请日:2024-04-03
Applicant: EPISTAR CORPORATION
Inventor: Wei-Che WU , Chih-Hao CHEN , Yu-Ling LIN , Chao-Hsing CHEN , Yong-Yang CHEN
CPC classification number: H01L33/22 , H01L33/005 , H01L33/60
Abstract: A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.
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