公开(公告)号：US20210343913A1

公开(公告)日：2021-11-04

申请号：US17306141

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US20240274766A1

公开(公告)日：2024-08-15

申请号：US18641195

申请日：2024-04-19

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US20230317898A1

公开(公告)日：2023-10-05

申请号：US18205920

申请日：2023-06-05

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

CPC classification number: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US20210343906A1

公开(公告)日：2021-11-04

申请号：US17306136

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/46 ,  H01L33/60 ,  H01L33/38

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US20140217359A1

公开(公告)日：2014-08-07

申请号：US14166642

申请日：2014-01-28

Applicant: EPISTAR CORPORATION

Inventor： Chien-Ming WU ,  Wu-Tsung LO ,  Shih-Chang LEE

IPC: H01L33/30

CPC classification number: H01L33/10 ,  H01L33/04 ,  H01L33/14

Abstract: The present application discloses a light-emitting apparatus comprising a first light-emitting semiconductor stack, a first intermediate layer formed on the first light-emitting semiconductor stack and a second light-emitting semiconductor stack formed on the first intermediate layer. The first intermediate layer comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an intermediate region. The intermediate region has a discontinuous structure located between the first conductive semiconductor layer and the second conductive semiconductor layer.

Abstract translation: 本申请公开了一种包括第一发光半导体堆叠，形成在第一发光半导体堆叠上的第一中间层和形成在第一中间层上的第二发光半导体堆叠的发光装置。 第一中间层包括第一导电半导体层，第二导电半导体层和中间区域。 中间区域具有位于第一导电半导体层和第二导电半导体层之间的不连续结构。

公开(公告)号：US20240162382A1

公开(公告)日：2024-05-16

申请号：US18506698

申请日：2023-11-10

Applicant: EPISTAR CORPORATION

Inventor： Wu-Tsung LO ,  Chih-Hao CHEN ,  Wei-Che WU ,  Heng-Ying CHO ,  Tsun-Kai KO

IPC: H01L33/22 ,  H01L33/10 ,  H01L33/62

CPC classification number: H01L33/22 ,  H01L33/10 ,  H01L33/62

Abstract: The present disclosure provides a light-emitting package. The light-emitting package includes a main body, a cavity disposed in the cavity, a base plane in the cavity and a light-emitting element. The light-emitting element is disposed in the cavity and connected to the base plane. The light-emitting element includes a substrate and a semiconductor stack on the substrate. The substrate includes a side wall, and the side wall incudes a first cutting trace. The main body includes a step portion disposed in the cavity and it surrounds the light-emitting element. The step portion comprises a first height relative to base plane, and the first cutting trace comprises a second height relative to the base plane. The second height is greater than the first height.

公开(公告)号：US20230395765A1

公开(公告)日：2023-12-07

申请号：US18230119

申请日：2023-08-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

CPC classification number: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US20150222094A1

公开(公告)日：2015-08-06

申请号：US14173650

申请日：2014-02-05

Applicant: Epistar Corporation

Inventor： Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Hung LIN ,  Wu-Tsung LO ,  Ta-Chuan KUO

IPC: H01S5/42 ,  H01S5/343 ,  H01S5/183 ,  H01S5/042

CPC classification number: H01S5/423 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/1835

Abstract: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.

Abstract translation: 发光阵列包括多个发光元件，其中所述多个发光元件中的每一个包括第一半导体叠层; 以及连接到所述多个发光元件的多个桥结构，其中所述多个发光元件被所述多个桥结构间隔开，其中所述多个桥结构中的每一个包括第二半导体堆叠，所述第二半导体堆叠具有 与第一半导体堆叠相同的外延堆叠。