公开(公告)号：US09825088B2

公开(公告)日：2017-11-21

申请号：US14808295

申请日：2015-07-24

Applicant: EPISTAR CORPORATION

Inventor： Shao-Ping Lu ,  Yi-Ming Chen ,  Yu-Ren Peng ,  Chun-Yu Lin ,  Chun-Fu Tsai ,  Tzu-Chieh Hsu

IPC: H01L29/06 ,  H01L31/00 ,  H01L27/15 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L27/153 ,  H01L33/005 ,  H01L33/08

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

公开(公告)号：US20160336482A1

公开(公告)日：2016-11-17

申请号：US14709985

申请日：2015-05-12

Applicant: EPISTAR CORPORATION

Inventor： Shao-Ping Lu ,  Cheng-Feng Yu ,  Wen-Luh Liao ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Chih-Chiang Lu

IPC: H01L33/08 ,  H01L33/10 ,  H01L33/22

CPC classification number: H01L25/0756 ,  H01L33/10 ,  H01L33/22 ,  H01L33/38

Abstract: An object of the present invention is to provide a light-emitting device comprising: a substrate, a first light-emitting semiconductor stack having a first transverse width, the first light-emitting semiconductor stack comprising a first active layer emitting a first radiation of a first dominant wavelength during operation; a second light-emitting semiconductor stack having a second transverse width less than the first transverse width and comprising a second active layer emitting a second radiation of a second dominant wavelength shorter than the first dominant wavelength during operation; and a first conductive connecting structure between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack, wherein the first conductive connecting structure is lattice-mismatched to the first active layer and to the second active layer, the first light-emitting semiconductor stack is between the substrate and the second light-emitting semiconductor stack.

Abstract translation: 本发明的目的是提供一种发光器件，其包括：衬底，具有第一横向宽度的第一发光半导体堆叠，所述第一发光半导体堆叠包括发射第一辐射的第一有源层， 运行中第一主波长; 第二发光半导体堆叠，其具有小于第一横向宽度的第二横向宽度，并且包括在操作期间发射比第一主波长短的第二主波长的第二辐射的第二有源层; 以及在第一发光半导体堆叠和第二发光半导体堆叠之间的第一导电连接结构，其中第一导电连接结构与第一有源层和第二有源层晶格失配，第一发光 半导体堆叠在基板和第二发光半导体堆叠之间。

公开(公告)号：USD707641S1

公开(公告)日：2014-06-24

申请号：US29462300

申请日：2013-08-01

Applicant: Epistar Corporation

Designer： Shao-Ping Lu ,  Wen-Luh Liao ,  Shih-I Chen ,  Chia-Liang Hsu

公开(公告)号：US10693039B2

公开(公告)日：2020-06-23

申请号：US15602421

申请日：2017-05-23

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Cheng ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30 ,  H01L33/46

Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

公开(公告)号：US09685588B2

公开(公告)日：2017-06-20

申请号：US15083743

申请日：2016-03-29

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Cheng ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30 ,  H01L33/46

CPC classification number: H01L33/22 ,  H01L33/30 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.

公开(公告)号：US09331247B2

公开(公告)日：2016-05-03

申请号：US14286685

申请日：2014-05-23

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Chen ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/22 ,  H01L33/30 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.

Abstract translation: 发光元件包括反射层; 在反射层上的第一透明层; 在所述第一透明层上具有活性层的发光层; 以及形成在第一透明层中的空腔。