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公开(公告)号：US20150270432A1
公开(公告)日：2015-09-24
申请号：US14223495
申请日：2014-03-24
Applicant: Epistar Corporation
Inventor： Jar-Yu WU , Yu-Ming KUN , Chun-Lung TSENG
IPC: H01L33/00 , H01L25/075 , H01L33/62
CPC classification number: H01L33/0095 , H01L27/153 , H01L33/385 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
Abstract: A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a semiconductor epitaxial stack on the substrate; and forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units wherein partial of the substrate is exposed by the isolation trenches.
Abstract translation: 一种制造发光器件的方法，包括以下步骤：提供衬底; 在衬底上形成半导体外延层; 以及通过使用照射所述半导体外延堆叠的激光束来形成所述半导体外延堆叠中的多个隔离沟槽，以限定多个发光二极管单元，其中所述衬底的部分由所述隔离沟道暴露。
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2.发明申请公开(公告)号：US20140209949A1
公开(公告)日：2014-07-31
申请号：US14162614
申请日：2014-01-23
Applicant: EPISTAR CORPORATION
Inventor： Keng-Lin CHUANG , Chun-Lung TSENG , Chih-Tsung SU , Ching-Hsing SHEN , Chih-Hui Alston LIU , Yu-Ming KUN
IPC: H01L33/46
Abstract: A light-emitting element, comprises: a substrate; a light-emitting semiconductor stack over the substrate and comprising an active layer; and a Distributed Bragg reflective unit under the substrate comprising a first Distributed Bragg reflective structure under the substrate and comprising a first number of pairs of alternately stacked first sub-layers and second sub-layers, and a second Distributed Bragg reflective structure under the first Distributed Bragg reflective structure and comprising a second number of pairs of alternately stacked third sub-layers and fourth sub-layers, wherein the first number is different from the second number.
Abstract translation: 发光元件包括：基板; 在衬底上方的发光半导体堆叠，并且包括有源层; 以及在所述衬底下方的分布式布拉格反射单元，其包括在所述衬底下方的第一分布式布拉格反射结构，并且包括第一数量的交替堆叠的第一子层和第二子层对，以及在所述第一分布式 布拉格反射结构并且包括第二数量的交替堆叠的第三子层和第四子层对，其中第一数量与第二数量不同。
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