公开(公告)号：US20180013038A1

公开(公告)日：2018-01-11

申请号：US15703649

申请日：2017-09-13

Applicant: EPISTAR CORPORATION

Inventor： Jar-Yu WU ,  Ching-Jang SU ,  Chun-Lung TSENG ,  Ching-Hsing SHEN

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/002 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0025

Abstract: A method of manufacturing a light-emitting device includes: providing a substrate; forming a light-emitting structure comprising an active layer on the substrate; forming a protective layer having a first thickness on the light-emitting structure; etching the protective layer such that the protective layer has a second thickness less than the first thickness; and patterning the protective layer.

公开(公告)号：US20170200866A1

公开(公告)日：2017-07-13

申请号：US15405548

申请日：2017-01-13

Applicant: EPISTAR CORPORATION

Inventor： Jar-Yu WU ,  Chun-Lung TSENG ,  Ching-Hsing SHEN ,  Wei-Ting CHENG ,  Jui-Fen CHIEN ,  Yu-Ming KUNG ,  Chiao-Yao CHENG

IPC: H01L33/46 ,  H01L33/58 ,  H01L33/40 ,  H01L33/00 ,  H01L33/42

CPC classification number: H01L33/46 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42 ,  H01L33/58 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A manufacturing method of a light-emitting device is disclosed. The method includes: providing a semiconductor wafer, including a substrate having a first surface and a second surface opposite to the first surface; and a semiconductor stack on the first surface; removing a portion of the semiconductor stack to form an exposed region; forming a first reflective structure on the exposed region; and providing a radiation on the second surface corresponding to a position of the first reflective structure.

公开(公告)号：US20150270432A1

公开(公告)日：2015-09-24

申请号：US14223495

申请日：2014-03-24

Applicant: Epistar Corporation

Inventor： Jar-Yu WU ,  Yu-Ming KUN ,  Chun-Lung TSENG

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L33/0095 ,  H01L27/153 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a semiconductor epitaxial stack on the substrate; and forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units wherein partial of the substrate is exposed by the isolation trenches.

Abstract translation: 一种制造发光器件的方法，包括以下步骤：提供衬底; 在衬底上形成半导体外延层; 以及通过使用照射所述半导体外延堆叠的激光束来形成所述半导体外延堆叠中的多个隔离沟槽，以限定多个发光二极管单元，其中所述衬底的部分由所述隔离沟道暴露。

公开(公告)号：US20170092528A1

公开(公告)日：2017-03-30

申请号：US15276141

申请日：2016-09-26

Applicant: EPISTAR CORPORATION

Inventor： Chun-Lung TSENG ,  Hung-Yao LIN ,  Hsin-Yi WANG ,  Chin-Kang HU ,  Sheng-Hsiung CHUANG

IPC: H01L21/683 ,  B32B37/00 ,  H01L21/67 ,  B32B38/10

CPC classification number: H01L21/67132 ,  B32B37/025 ,  B32B38/10 ,  B32B2309/12 ,  B32B2311/00 ,  B32B2311/02 ,  B32B2311/12 ,  B32B2311/24 ,  B32B2457/14 ,  H01L21/67092

Abstract: A metal recycling method comprises attaching a tape to a metal layer of a semiconductor structure; and separating a part of the metal layer from the semiconductor structure and transferring the part of the metal layer to the tape by a pressure difference.

公开(公告)号：US20160359088A1

公开(公告)日：2016-12-08

申请号：US15240264

申请日：2016-08-18

Applicant: EPISTAR CORPORATION

Inventor： Jar-Yu WU ,  Ching-Jang SU ,  Chun-Lung TSENG ,  Ching-Hsing SHEN

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/22 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/002 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0025

Abstract: A light-emitting device is disclosed. The light-emitting device comprises a substrate; a barrier; a light-emitting structure formed between the substrate and the barrier, comprising a first region and a second region on a same plane; and a transparent conductive layer formed on the barrier layer and the second region; wherein the barrier layer is formed on the first region, the barrier layer has a sidewall and a bottom surface facing the first region; wherein an angle between the sidewall and the bottom surface is between 10°-70°.

Abstract translation: 公开了一种发光器件。 发光装置包括基板; 一个障碍 形成在所述基板和所述势垒之间的发光结构，包括在同一平面上的第一区域和第二区域; 以及形成在所述阻挡层和所述第二区域上的透明导电层; 其中所述阻挡层形成在所述第一区域上，所述阻挡层具有面向所述第一区域的侧壁和底表面; 其中所述侧壁和所述底表面之间的角度在10°-70°之间。

公开(公告)号：US20140209949A1

公开(公告)日：2014-07-31

申请号：US14162614

申请日：2014-01-23

Applicant: EPISTAR CORPORATION

Inventor： Keng-Lin CHUANG ,  Chun-Lung TSENG ,  Chih-Tsung SU ,  Ching-Hsing SHEN ,  Chih-Hui Alston LIU ,  Yu-Ming KUN

IPC: H01L33/46

CPC classification number: H01L33/20 ,  H01L33/46

Abstract: A light-emitting element, comprises: a substrate; a light-emitting semiconductor stack over the substrate and comprising an active layer; and a Distributed Bragg reflective unit under the substrate comprising a first Distributed Bragg reflective structure under the substrate and comprising a first number of pairs of alternately stacked first sub-layers and second sub-layers, and a second Distributed Bragg reflective structure under the first Distributed Bragg reflective structure and comprising a second number of pairs of alternately stacked third sub-layers and fourth sub-layers, wherein the first number is different from the second number.

Abstract translation: 发光元件包括：基板; 在衬底上方的发光半导体堆叠，并且包括有源层; 以及在所述衬底下方的分布式布拉格反射单元，其包括在所述衬底下方的第一分布式布拉格反射结构，并且包括第一数量的交替堆叠的第一子层和第二子层对，以及在所述第一分布式 布拉格反射结构并且包括第二数量的交替堆叠的第三子层和第四子层对，其中第一数量与第二数量不同。

公开(公告)号：US20200243720A1

公开(公告)日：2020-07-30

申请号：US16800885

申请日：2020-02-25

Applicant: EPISTAR CORPORATION

Inventor： Jar-Yu WU ,  Ching-Jang SU ,  Chun-Lung TSENG ,  Ching-Hsing SHEN

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/22 ,  H01L33/00

Abstract: A light-emitting device, includes: a semiconductor stack, including a top surface, wherein the top surface includes a first region and a second region which are coplanar; a current barrier layer formed on the first region, wherein the current barrier layer includes an insulating material; and a transparent conductive layer formed on the current barrier layer and the second region; and a first electrode formed on the transparent conductive layer; wherein the current barrier layer includes: an electrode region at a position corresponding to the first electrode, having a shape substantially the same as the first electrode; and a plurality of extension regions extending from the electrode region and not covered by the first electrode.