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    LIGHT-EMITTING DEVICE AND DISPLAY DEVICE HAVING THE SAME
    1.
    发明申请
    LIGHT-EMITTING DEVICE AND DISPLAY DEVICE HAVING THE SAME 有权

    公开(公告)号：US20240372053A1

    公开(公告)日：2024-11-07

    申请号：US18654733

    申请日：2024-05-03

    Applicant: EPISTAR CORPORATION

    Inventor： Hsin-Ying WANG ,  Jhih-Yong YANG ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Jheng-Long HUANG ,  Ching-Hsing SHEN ,  Hui-Fang KAO

    IPC: H01L33/62 ,  H01L27/15

    Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer and a plurality of mesas spaced apart from each other on the first semiconductor layer, wherein the plurality of mesas each includes a second semiconductor layer, the first semiconductor layer and the second semiconductor layer have different conductivity types; a contact metal formed on the semiconductor stack, including a plurality of first contact parts located between the mesas and electrically connected to the first semiconductor layer, and a plurality of second contact parts located on the mesas and electrically connected to the second semiconductor layer; a first insulating structure formed on the contact metal, including a plurality of first openings corresponding to the first contact parts and a plurality of second openings corresponding to the second contact parts; a current spreading electrode formed on the first insulating structure, including a first current spreader and a plurality of second current spreaders, wherein the first current spreader is located between the mesas and filled in the first openings to connect the first contact parts and the second current spreaders are formed on the mesas and filled in the second openings to connect the second contact parts; a second insulating structure formed on the current spreading electrode, including a third opening on the first current spreader and a plurality of fourth openings formed on the second current spreaders; and an electrode pad structure formed on the second insulating structure, including at least one first electrode pad filled in the third opening to connect to the first current spreader, and a plurality of second electrode pads filled in the fourth openings to connect the second current spreaders.

    METHOD OF MAKING A LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MADE THEREOF
    2.
    发明申请
    METHOD OF MAKING A LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MADE THEREOF 审中-公开

    公开(公告)号：US20200243720A1

    公开(公告)日：2020-07-30

    申请号：US16800885

    申请日：2020-02-25

    Applicant: EPISTAR CORPORATION

    Inventor： Jar-Yu WU ,  Ching-Jang SU ,  Chun-Lung TSENG ,  Ching-Hsing SHEN

    IPC: H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/22 ,  H01L33/00

    Abstract: A light-emitting device, includes: a semiconductor stack, including a top surface, wherein the top surface includes a first region and a second region which are coplanar; a current barrier layer formed on the first region, wherein the current barrier layer includes an insulating material; and a transparent conductive layer formed on the current barrier layer and the second region; and a first electrode formed on the transparent conductive layer; wherein the current barrier layer includes: an electrode region at a position corresponding to the first electrode, having a shape substantially the same as the first electrode; and a plurality of extension regions extending from the electrode region and not covered by the first electrode.

    LIGHT-EMITTING DEVICE
    3.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20160359088A1

    公开(公告)日：2016-12-08

    申请号：US15240264

    申请日：2016-08-18

    Applicant: EPISTAR CORPORATION

    Inventor： Jar-Yu WU ,  Ching-Jang SU ,  Chun-Lung TSENG ,  Ching-Hsing SHEN

    IPC: H01L33/38 ,  H01L33/44 ,  H01L33/22 ,  H01L33/42

    CPC classification number: H01L33/38 ,  H01L33/002 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0025

    Abstract: A light-emitting device is disclosed. The light-emitting device comprises a substrate; a barrier; a light-emitting structure formed between the substrate and the barrier, comprising a first region and a second region on a same plane; and a transparent conductive layer formed on the barrier layer and the second region; wherein the barrier layer is formed on the first region, the barrier layer has a sidewall and a bottom surface facing the first region; wherein an angle between the sidewall and the bottom surface is between 10°-70°.

    Abstract translation: 公开了一种发光器件。 发光装置包括基板; 一个障碍 形成在所述基板和所述势垒之间的发光结构，包括在同一平面上的第一区域和第二区域; 以及形成在所述阻挡层和所述第二区域上的透明导电层; 其中所述阻挡层形成在所述第一区域上，所述阻挡层具有面向所述第一区域的侧壁和底表面; 其中所述侧壁和所述底表面之间的角度在10°-70°之间。

    LIGHT-EMITTING ELEMENT COMPRISING A REFLECTIVE STRUCTURE WITH HIGH EFFICIENCY
    4.
    发明申请
    LIGHT-EMITTING ELEMENT COMPRISING A REFLECTIVE STRUCTURE WITH HIGH EFFICIENCY 有权
    具有高效率反射结构的发光元件

    公开(公告)号：US20140209949A1

    公开(公告)日：2014-07-31

    申请号：US14162614

    申请日：2014-01-23

    Applicant: EPISTAR CORPORATION

    Inventor： Keng-Lin CHUANG ,  Chun-Lung TSENG ,  Chih-Tsung SU ,  Ching-Hsing SHEN ,  Chih-Hui Alston LIU ,  Yu-Ming KUN

    IPC: H01L33/46

    CPC classification number: H01L33/20 ,  H01L33/46

    Abstract: A light-emitting element, comprises: a substrate; a light-emitting semiconductor stack over the substrate and comprising an active layer; and a Distributed Bragg reflective unit under the substrate comprising a first Distributed Bragg reflective structure under the substrate and comprising a first number of pairs of alternately stacked first sub-layers and second sub-layers, and a second Distributed Bragg reflective structure under the first Distributed Bragg reflective structure and comprising a second number of pairs of alternately stacked third sub-layers and fourth sub-layers, wherein the first number is different from the second number.

    Abstract translation: 发光元件包括：基板; 在衬底上方的发光半导体堆叠，并且包括有源层; 以及在所述衬底下方的分布式布拉格反射单元，其包括在所述衬底下方的第一分布式布拉格反射结构，并且包括第一数量的交替堆叠的第一子层和第二子层对，以及在所述第一分布式 布拉格反射结构并且包括第二数量的交替堆叠的第三子层和第四子层对，其中第一数量与第二数量不同。

    Semiconductor Device
    5.
    发明申请
    Semiconductor Device 有权

    公开(公告)号：US20220173292A1

    公开(公告)日：2022-06-02

    申请号：US17456858

    申请日：2021-11-29

    Applicant: EPISTAR CORPORATION

    Inventor： Ching-Hsing SHEN ,  Wen-Luh LIAO ,  Chen OU ,  Shih-Chang LEE ,  Hui-Fang KAO ,  Yun-Chung CHOU

    IPC: H01L33/62

    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes an epitaxial stack including a mesa region and a lower region; a first pad on the lower region and a second pad on the mesa region; a first contact between the epitaxial stack and the first pad; a passivation structure covering the epitaxial stack and including a first opening; and a first metal structure in the first opening and disposed between the first contact and the first pad; wherein the first metal structure includes a first top surface away from the epitaxial stack, and the passivation structure including a second top surface at a position corresponding to the lower region and away from the epitaxial stack, and a first height difference between the first top surface and the second top surface is less than 3 μm and larger than zero; and wherein the first metal structure includes a first width adjacent to the first contact and a second width adjacent to the first pad, and the second width is larger than the first width.

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