公开(公告)号：US20140209949A1

公开(公告)日：2014-07-31

申请号：US14162614

申请日：2014-01-23

Applicant: EPISTAR CORPORATION

Inventor： Keng-Lin CHUANG ,  Chun-Lung TSENG ,  Chih-Tsung SU ,  Ching-Hsing SHEN ,  Chih-Hui Alston LIU ,  Yu-Ming KUN

IPC: H01L33/46

CPC classification number: H01L33/20 ,  H01L33/46

Abstract: A light-emitting element, comprises: a substrate; a light-emitting semiconductor stack over the substrate and comprising an active layer; and a Distributed Bragg reflective unit under the substrate comprising a first Distributed Bragg reflective structure under the substrate and comprising a first number of pairs of alternately stacked first sub-layers and second sub-layers, and a second Distributed Bragg reflective structure under the first Distributed Bragg reflective structure and comprising a second number of pairs of alternately stacked third sub-layers and fourth sub-layers, wherein the first number is different from the second number.

Abstract translation: 发光元件包括：基板; 在衬底上方的发光半导体堆叠，并且包括有源层; 以及在所述衬底下方的分布式布拉格反射单元，其包括在所述衬底下方的第一分布式布拉格反射结构，并且包括第一数量的交替堆叠的第一子层和第二子层对，以及在所述第一分布式 布拉格反射结构并且包括第二数量的交替堆叠的第三子层和第四子层对，其中第一数量与第二数量不同。

公开(公告)号：US20210408338A1

公开(公告)日：2021-12-30

申请号：US17354922

申请日：2021-06-22

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Li-Yu SHEN ,  Chih-Hao CHEN ,  Keng-Lin CHUANG

IPC: H01L33/44 ,  H01L33/10

Abstract: A light-emitting device comprises a semiconductor stack emitting a light with a peak wavelength λ; and a light field adjustment layer formed on the semiconductor stack, wherein the light field adjustment layer comprises a plurality of first layers and a plurality of second layers alternately stacked on top of each other, the plurality of first layers each comprises a first optical thickness, and the plurality of second layers each comprises a second optical thickness.