OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    1.
    发明申请
    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
    光电器件及其制造方法

    公开(公告)号:US20150060924A1

    公开(公告)日:2015-03-05

    申请号:US14489169

    申请日:2014-09-17

    Abstract: An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion.

    Abstract translation: 光电子器件包括具有第一表面的半导体堆叠,在第一表面上具有欧姆接触半导体叠层的第一图案的接触层,半导体叠层中的空隙和围绕接触层的第一表面的反射镜结构 并且覆盖所述接触层,其中所述第一表面具有未被所述接触层覆盖的第一部分和被所述接触层覆盖的第二部分,并且所述第一部分比所述第二部分更粗糙。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    3.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20150144984A1

    公开(公告)日:2015-05-28

    申请号:US14554488

    申请日:2014-11-26

    CPC classification number: H01L33/382 H01L33/08 H01L33/22 H01L33/46

    Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

    Abstract translation: 半导体发光器件包括半导体叠层,其包括侧面,第一表面和与第一表面相对的第二表面,其中半导体堆叠还包括从第一表面延伸到第二表面的导电通孔; 形成在所述第二表面上的透明导电层; 第一焊盘部分和第二焊盘部分,形成在第一表面上并电连接到半导体堆叠; 以及形成在第一焊盘部分和半导体堆叠之间以及在第二焊盘部分和半导体堆叠之间的绝缘层。

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