公开(公告)号：EP1388883A2

公开(公告)日：2004-02-11

申请号：EP03077444.2

申请日：2003-08-05

Applicant: FEI Company

Inventor： Gerlach, Robert L. ,  Utlaut, Mark W. ,  Scheinfein, Michael R.

IPC: H01J37/305 ,  H01J37/28

CPC classification number: H01J37/12 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/12 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: A system including co-axial focused ion beam and an electron beam allows for accurate processing with the FIB using images formed by the electron beam. In one embodiment, a deflector deflects the electron beam onto the axis of the ion beam and deflects secondary particles collected through the final lens toward a detector. In one embodiment, a positively biased final electrostatic lens focuses both beams using the same voltage to allow simultaneous or alternating FIB and SEM operation. In one embodiment, the landing energy of the electrons can be varied without changing the working distance.

Abstract translation: 包括同轴聚焦离子束和电子束的系统允许使用由电子束形成的图像的FIB进行精确的处理。 在一个实施例中，偏转器将电子束偏转到离子束的轴上，并将通过最终透镜收集的二次粒子偏转到检测器。 在一个实施例中，正偏置的最终静电透镜使用相同的电压聚焦两个光束，以允许同时或交替的FIB和SEM操作。 在一个实施例中，可以改变电子的着陆能量而不改变工作距离。

公开(公告)号：EP1388883B1

公开(公告)日：2013-06-05

申请号：EP03077444.2

申请日：2003-08-05

Applicant: FEI COMPANY

Inventor： Gerlach, Robert L. ,  Utlaut, Mark W. ,  Scheinfein, Michael R.

IPC: H01J37/12 ,  H01J37/28 ,  H01J37/305

CPC classification number: H01J37/12 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/12 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31749

公开(公告)号：EP1524681A3

公开(公告)日：2006-06-21

申请号：EP04077809.4

申请日：2004-10-13

Applicant: FEI COMPANY

Inventor： Gerlach, Robert L. ,  Utlaut, Mark

IPC: H01J37/317

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  H01J37/3007 ,  H01J37/3178 ,  H01J2237/045 ,  H01J2237/31744 ,  H01J2237/31755

Abstract: The present invention provides improved angular aperture schemes for generating shaped beam spots having a desired geometric shape from rectangular, elliptical, and semi-elliptical apertures having one sharp edge. A sharper beam edge can be generated by offsetting the rectangular or elliptical aperture in combination with under or over focus. In the spherical aberration limit, under-focused semi-circle apertures provide a sharp, flat edge. The sharp edge can be made resolute enough for precision milling applications, and at the same time, the spot can be made large enough with enough overall current and current density to efficiently mill away material in either a production or laboratory environment. Depending on the particular beam spot that is desired, combinations of techniques including defocusing, aperture offsetting, and stigmation adjustment, can be used in both spherical aberration dominant and chromatic aberration dominant environments to achieve a desired beam for a desired application.

公开(公告)号：EP1524681A2

公开(公告)日：2005-04-20

申请号：EP04077809.4

申请日：2004-10-13

Applicant: FEI Company

Inventor： Gerlach, Robert L. ,  Utlaut, Mark

IPC: H01J37/317

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  H01J37/3007 ,  H01J37/3178 ,  H01J2237/045 ,  H01J2237/31744 ,  H01J2237/31755

Abstract: The present invention provides improved angular aperture schemes for generating shaped beam spots having a desired geometric shape from rectangular, elliptical, and semi-elliptical apertures having one sharp edge. A sharper beam edge can be generated by offsetting the rectangular or elliptical aperture in combination with under or over focus. In the spherical aberration limit, under-focused semi-circle apertures provide a sharp, flat edge. The sharp edge can be made resolute enough for precision milling applications, and at the same time, the spot can be made large enough with enough overall current and current density to efficiently mill away material in either a production or laboratory environment. Depending on the particular beam spot that is desired, combinations of techniques including defocusing, aperture offsetting, and stigmation adjustment, can be used in both spherical aberration dominant and chromatic aberration dominant environments to achieve a desired beam for a desired application.

Abstract translation: 本发明提供了改进的角孔方案，用于从具有一个锋利边缘的矩形，椭圆形和半椭圆形孔产生具有期望几何形状的成形束斑。 可以通过将矩形或椭圆形孔径与焦点下方或焦点相结合来产生更尖锐的光束边缘。 在球面像差极限中，未聚焦的半圆孔提供了尖锐的平坦边缘。 尖锐的边缘可以做出足够坚固的精密铣削应用，同时，现场可以制造得足够大，具有足够的总电流和电流密度，以便在生产或实验室环境中有效地磨碎材料。 根据期望的特定光束点，可以在球面像差优势和色差优势环境中使用包括散焦，孔径偏移和标注调整的技术的组合，以实现期望的应用所需的光束。

公开(公告)号：EP1388883A3

公开(公告)日：2004-10-20

申请号：EP03077444.2

申请日：2003-08-05

Applicant: FEI Company

Inventor： Gerlach, Robert L. ,  Utlaut, Mark W. ,  Scheinfein, Michael R.

IPC: H01J37/305 ,  H01J37/28

CPC classification number: H01J37/12 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/12 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: A system including co-axial focused ion beam and an electron beam allows for accurate processing with the FIB using images formed by the electron beam. In one embodiment, a deflector deflects the electron beam onto the axis of the ion beam and deflects secondary particles collected through the final lens toward a detector. In one embodiment, a positively biased final electrostatic lens focuses both beams using the same voltage to allow simultaneous or alternating FIB and SEM operation. In one embodiment, the landing energy of the electrons can be varied without changing the working distance.

Abstract translation: 包括同轴聚焦离子束和电子束的系统允许使用由电子束形成的图像对FIB进行精确处理。 在一个实施例中，偏转器将电子束偏转到离子束的轴上并且将通过最终透镜收集的二次粒子偏转向检测器。 在一个实施例中，正偏置的最终静电透镜使用相同的电压来聚焦两个光束以允许同时或交替的FIB和SEM操作。 在一个实施例中，电子的着陆能量可以改变而不改变工作距离。