公开(公告)号：EP2399168A4

公开(公告)日：2013-06-05

申请号：EP10792234

申请日：2010-06-23

Applicant: FUJIFILM CORP

Inventor： FUJIMORI TORU ,  SHIRAKAWA KOJI ,  USA TOSHIHIRO ,  SUGIYAMA KENJI ,  ITO TAKAYUKI ,  TSUBAKI HIDEAKI ,  NISHIMAKI KATSUHIRO ,  HIRANO SHUJI ,  TAKAHASHI HIDENORI

IPC: G03F7/039 ,  B29C33/38 ,  B29C59/02 ,  C08F12/00 ,  C08F20/00 ,  C08F20/50 ,  G03F7/00 ,  G03F7/004 ,  H01L21/027

CPC classification number: C08F20/50 ,  B29C33/38 ,  B29C2033/426 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397

公开(公告)号：JP2013193454A

公开(公告)日：2013-09-30

申请号：JP2012066565

申请日：2012-03-23

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SUGIYAMA KENJI ,  TASHIRO KOTARO

IPC: B29C33/38 ,  B29C59/02 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To allows forming of minute grooves, even when forming the many minute grooves on a substrate having a stepped structure, to equalize depths with each other in each of step parts and groove parts of the stepped structure.SOLUTION: In a method of manufacturing a master mold 10 and a surface processing method, on a substrate 1 having a stepped structure 2, a resist film 3 is formed so that thicknesses tand tof the resist film 3 in each of step parts 2a and groove parts 2b of the stepped structure 2 satisfy a predetermined requirement and a difference between them becomes small. A pattern corresponding to a rugged structure 12 to be formed is drawn on the resist firm 3 by use of an electron beam drawing device. After developing the drawn resist film 3, the substrate 1 is etched while using the resist firm 3 as a mask.

Abstract translation: 要解决的问题：为了允许形成微小凹槽，即使在具有阶梯状结构的基板上形成许多微小凹槽，也可以在台阶部分和阶梯状结构的各个槽部中相互均匀的深度。解决方案：在 制造母模10的方法和表面处理方法在具有台阶结构2的基板1上形成抗蚀剂膜3，使得在步骤2a中的每一个中的抗蚀剂膜3和 阶梯式结构2满足预定要求，它们之间的差异变小。 将要形成的凹凸结构12对应的图案通过使用电子束拉制装置在抗蚀剂固体3上被拉伸。 在显影拉伸的抗蚀剂膜3之后，在使用抗蚀剂固体3作为掩模的同时蚀刻基板1。

公开(公告)号：JP2013185188A

公开(公告)日：2013-09-19

申请号：JP2012050177

申请日：2012-03-07

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： OTSU AKIHIKO ,  SUGIYAMA KENJI ,  KIDO TAKEO ,  SHIRATA SHINYA ,  SONODA SHINICHIRO

IPC: C25D1/10 ,  C23C22/68 ,  C23F4/00 ,  G02B1/11 ,  G02B1/118 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To produce a master mold at higher throughput.SOLUTION: This invention relates to: a method of producing a master mold 10; and a surface treating method. The method of producing the master mold includes: subjecting a substrate 1 to hydrothermal treatment to form a fine uneven structure 20a on a surface of an aluminum thin film 2 that comprises at least one of aluminum, aluminum nitride, and an aluminum alloy, wherein the substrate 1 has a surface S to be treated and further has the aluminum thin film 2 formed on the surface S to be treated; and thereafter etching the aluminum thin film 20 and the substrate 1 from a side of the aluminum thin film 20 to remove substantially the whole aluminum thin film 20.

Abstract translation: 要解决的问题：以更高的生产量生产母模。解决方案：本发明涉及一种制造母模10的方法; 和表面处理方法。 制造母模的方法包括：对基板1进行水热处理，在铝薄膜2的包含铝，氮化铝和铝合金中的至少一种的表面上形成微细凹凸结构20a，其中， 基板1具有待处理的表面S，并且还具有形成在待处理表面S上的铝薄膜2; 然后从铝薄膜20侧蚀刻铝薄膜20和基板1，以便基本上除去整个铝薄膜20。

公开(公告)号：JP2011186418A

公开(公告)日：2011-09-22

申请号：JP2010142062

申请日：2010-06-22

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： FUJIMORI TORU ,  SHIRAKAWA KOJI ,  USA TOSHIHIRO ,  SUGIYAMA KENJI ,  ITO TAKAYUKI ,  TSUBAKI HIDEAKI ,  NISHIMAKI KATSUHIRO ,  HIRANO SHUJI ,  TAKAHASHI HIDETOMO

IPC: G03F7/039 ,  C08F20/10 ,  G03F7/004 ,  G03F7/40 ,  H01L21/027

CPC classification number: C08F20/50 ,  B29C33/38 ,  B29C2033/426 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397

Abstract: PROBLEM TO BE SOLVED: To provide a chemical amplification resist composition to be used for the preparation of a mold, capable of forming a pattern excellent not only in sensitivity and resolution, but also in the line width roughness (LWR) performance, in preparation of a mold. SOLUTION: The chemical amplification resist composition contains a resin which is decomposed by an action of a specified acid to increase the solubility with an alkali developing solution, and a mold preparation method and a resist film each using the composition are also disclosed. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种用于制备模具的化学增幅抗蚀剂组合物，其能够形成不仅在灵敏度和分辨率以及线宽粗糙度（LWR）性能方面都优异的图案， 在准备模具。 解决方案：化学增幅抗蚀剂组合物含有通过特定酸的作用分解以提高与碱性显影液的溶解度的树脂，并且还公开了使用该组合物的模具制备方法和抗蚀剂膜。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2008146691A

公开(公告)日：2008-06-26

申请号：JP2006329234

申请日：2006-12-06

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SUGIYAMA KENJI

IPC: G11B7/26

CPC classification number: G11B7/261 ,  G11B7/0079 ,  G11B7/24079

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a stamper original plate capable of forming grooves having depths different from each other in a substrate which constitutes the stamper original plate in a short time.
SOLUTION: The manufacturing method of stamper original plate 50 includes a step for forming a negative resist layer 52 on a silicon wafer 51, a step for partially irradiating the negative resist layer 52 with an electron beam, a step for removing a non-exposed part 52B by development, a step for forming a positive resist layer 53 on the silicon wafer 51 on which a portion of the negative resist layer 52 remains, a step for drawing a prescribed pattern to the positive resist layer 53 by using the electron beam, a step for removing an exposed part by development and a step for performing reactive ion etching to the exposed silicon wafer 51 and the surface of the negative resist layer 52 to form a rugged shape having grooves 51a and 51b having depths different from each other on the surface of the silicon wafer 51.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够在短时间内在构成压模原版的基板中形成彼此不同深度的凹槽的压模原版的制造方法。 压模原板50的制造方法包括在硅晶片51上形成负光刻胶层52的步骤，用电子束部分照射负光刻胶层52的工序， 曝光部分52B，用于在其上保留有负光刻胶层52的一部分的硅晶片51上形成正性抗蚀剂层53的步骤，通过使用电子法将规定图案拉伸到正性抗蚀剂层53的步骤 光束，用于通过显影去除曝光部分的步骤和用于对暴露的硅晶片51和负光刻胶层52的表面进行反应离子蚀刻的步骤，以形成具有彼此不同深度的槽51a和51b的凹凸形状 在硅晶片51的表面上。版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2014071249A

公开(公告)日：2014-04-21

申请号：JP2012216710

申请日：2012-09-28

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IZAWA SEIICHI ,  CHAI SATOSHI ,  SUGIYAMA KENJI ,  IKEDA KOZUE

IPC: G03F1/00 ,  G02B5/00 ,  G03B11/00 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To more easily adjust a transmittance for light of a light-shielding film to a desired value.SOLUTION: A drawing target substrate S1 is prepared, which is composed of a transparent substrate 10, a light-shielding film 11 formed on the transparent substrate 10, and a resist film 12 formed on the light-shielding film 11. Dots 12a having a dot density value corresponding to a desired transmittance for light of a light-shielding mask 1 are drawn on the resist film 12 with an electron beam B; the resist film 12 after dots are drawn is developed; the light-shielding film 11 is etched with an etching gas G by using the developed resist film 12 as an etching mask; and the remaining resist film 12 is removed.

Abstract translation: 要解决的问题：为了更容易地将遮光膜的光的透射率调节到期望值。解决方案：制备由透明基板10，形成的遮光膜11构成的拉制对象基板S1 在透明基板10上形成的抗蚀剂膜12和形成在遮光膜11上的抗蚀剂膜12.具有对应于遮光掩模1的光的期望透射率的点密度值的点12a在抗蚀剂膜12上被吸引 电子束B; 显影出点后的抗蚀剂膜12; 通过使用显影的抗蚀剂膜12作为蚀刻掩模，用蚀刻气体G蚀刻遮光膜11; 并且去除剩余的抗蚀剂膜12。

公开(公告)号：JP2010218644A

公开(公告)日：2010-09-30

申请号：JP2009065596

申请日：2009-03-18

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： USA TOSHIHIRO ,  SUGIYAMA KENJI

IPC: G11B5/84 ,  G11B5/73 ,  H01J37/147 ,  H01J37/305 ,  H01L21/027

CPC classification number: G11B5/855 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3174

Abstract: PROBLEM TO BE SOLVED: To improve positioning accuracy of a pattern in the circumferential direction in an electron beam lithography method to conduct pattern drawing by irradiation of an electron beam. SOLUTION: Among variations of encoder signals from an encoder occurring within one rotation of a rotating stage in pattern drawing, a fixed frequency component commonly appearing in a plurality of rotations with the number of rotations different from one another, is compensated by deflection correction of the electron beam in the circumferential direction, and among variations of the encoder signal, a variable frequency component other than the fixed frequency component is compensated by varying the clock frequency of a drawing clock. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提高电子束光刻方法中的图案在圆周方向上的定位精度，通过电子束的照射进行图案绘制。 解决方案：在图案绘制中，在旋转台的一个旋转内发生的编码器信号的变化中，通常以具有不同的旋转数的多个旋转出现的固定频率分量通过偏转来补偿 通过改变绘制时钟的时钟频率来补偿电子束在圆周方向上的校正，以及编码器信号的变化之中，除了固定频率分量之外的可变频率分量。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009244459A

公开(公告)日：2009-10-22

申请号：JP2008089200

申请日：2008-03-31

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KOMATSU KAZUNORI ,  SUGIYAMA KENJI

IPC: G03F7/20 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To shorten the micropattern drawing time in an electron beam drawing method of drawing a desired micropattern on a resist by means of an electron beam. SOLUTION: In the electron beam drawing method of drawing a desired micropattern on a substrate 10 having a resist 11 applied thereon and installed on a rotating stage 41, by the scanning of an electron beam EB, while making the rotating stage 41 rotate, the rotation of the rotating stage 14 is controlled so that the rotation speed is higher for drawing on inner peripheral tracks and lower for drawing on outer peripheral tracks which is inversely proportional to the radius of drawing positions, to fix a linear speed of micropattern drawing in radial positions of the rotating stage 41, and the resist 11 is pre-exposed, prior to the drawing of micropattern. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：通过电子束在抗蚀剂上绘制所需的微图案的电子束拉伸方法来缩短微图案拉伸时间。 解决方案：在通过扫描电子束EB的同时在其上施加抗蚀剂11并安装在旋转台41上的基板10上绘制所需的微图案的电子束拉制方法中，使旋转台41旋转 控制旋转台14的旋转，使得拉伸内周轨道的旋转速度较高，与外围轨道拉伸成比例，与外围轨迹成反比，该位置与绘图位置的半径成反比，以固定微图案拉丝的线速度 在旋转台41的径向位置，并且抗蚀剂11被预曝光之前，在绘制微图案之前。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008134482A

公开(公告)日：2008-06-12

申请号：JP2006321087

申请日：2006-11-29

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SUGIYAMA KENJI

IPC: G03F7/20 ,  G11B7/26 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To fast and dynamically change an exposure dose of an electron beam which is made thinner so as to draw a fine image with an electron beam. SOLUTION: An electron beam drawing method includes exposing a substrate having a photosensitive layer by moving an electron beam in a drawing direction. The substrate 1 is irradiated with the electron beam while the electron beam is subjected to blanking at a predetermined blanking frequency, as well as the electron beam is relatively moved to oscillate forward and backward in the drawing direction. The movement of oscillation forward and backward is carried out at a frequency higher than the blanking frequency. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：快速且动态地改变更薄的电子束的曝光剂量，以便用电子束绘制精细的图像。 解决方案：电子束拉制方法包括通过沿着拉伸方向移动电子束来曝光具有感光层的基板。 当电子束以预定的消隐频率进行消隐时，电子束被照射电子束，并且电子束被相对移动以在拉伸方向上向前和向后摆动。 前后摆动的移动以比消隐频率高的频率进行。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008123574A

公开(公告)日：2008-05-29

申请号：JP2006303519

申请日：2006-11-09

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： FUJIWARA NOBUHIKO ,  SUGIYAMA KENJI ,  KURUMA HIKOTATSU ,  NISHIMAKI KATSUHIRO

IPC: G11B7/26 ,  G11B7/24

Abstract: PROBLEM TO BE SOLVED: To manufacture a stamper original plate for an optical information recording medium having two or more fine rugged shapes, and also to manufacture a stamper. SOLUTION: A resist layer 52 is formed on a silicon wafer 51, the resist layer 52 is irradiated with an electron beam to form a prescribed pattern, the resist layer 52 is developed to remove a part irradiated with the electron beam and reactive ion etching is performed to the surface of the silicon wafer 51 exposed by development, so that the two or more rugged shapes having ≤60 nm depths different from each other are formed on the surface of the silicon wafer 51. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：制造具有两个或更多个细小凹凸形状的光学信息记录介质的压模原版，以及制造压模。 解决方案：在硅晶片51上形成抗蚀剂层52，用电子束照射抗蚀剂层52以形成规定的图案，使抗蚀剂层52显影以除去被电子束照射的部分和反应性 对通过显影曝光的硅晶片51的表面进行离子蚀刻，使得在硅晶片51的表面上形成具有彼此不同的≤60nm深度的两个或更多个凹凸形状。权利要求（ C）2008，JPO＆INPIT