公开(公告)号：AT532194T

公开(公告)日：2011-11-15

申请号：AT00110055

申请日：2000-05-12

Applicant: FUJIFILM CORP

Inventor： TAKIZAWA HIROO

IPC: H01G9/20 ,  C07F15/00 ,  H01L51/30

公开(公告)号：AT531722T

公开(公告)日：2011-11-15

申请号：AT00108862

申请日：2000-04-26

Applicant: FUJIFILM CORP

Inventor： TAKIZAWA HIROO ,  KUBOTA TADAHIKO

IPC: C07F15/00 ,  H01G9/20 ,  H01L51/30 ,  H01L51/46

公开(公告)号：AT547418T

公开(公告)日：2012-03-15

申请号：AT08016208

申请日：2008-09-15

Applicant: FUJIFILM CORP

Inventor： MURAKAMI TAKESHI ,  KINOSHITA IKUO ,  YAGI KAZUNARI ,  TAKADA SAKI ,  TAKEDA AKIRA ,  SOTOYAMA WATARU ,  TAKIZAWA HIROO

IPC: C07D471/14 ,  C07F15/00 ,  C09K11/87 ,  H01L51/00 ,  H05B33/14

公开(公告)号：AT505787T

公开(公告)日：2011-04-15

申请号：AT04014963

申请日：2004-06-25

Applicant: FUJIFILM CORP

Inventor： AKIBA MASAHARU ,  TANI TAKEHARU ,  TAKIZAWA HIROO ,  INAGAKI YOSHIO

IPC: G11B7/00 ,  G11B7/246 ,  G11B7/2463 ,  G11B7/2472 ,  G11B7/2475 ,  G11B7/2478 ,  G11B7/248 ,  G11B7/2492 ,  G11B7/2495 ,  G11B7/253 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/2535

公开(公告)号：DE602004032195D1

公开(公告)日：2011-05-26

申请号：DE602004032195

申请日：2004-06-25

Applicant: FUJIFILM CORP

Inventor： AKIBA MASAHARU ,  TANI TAKEHARU ,  TAKIZAWA HIROO ,  INAGAKI YOSHIO

IPC: G11B7/00 ,  G11B7/246 ,  G11B7/2463 ,  G11B7/2472 ,  G11B7/2475 ,  G11B7/2478 ,  G11B7/248 ,  G11B7/2492 ,  G11B7/2495 ,  G11B7/253 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/2535

公开(公告)号：DE602008005530D1

公开(公告)日：2011-04-28

申请号：DE602008005530

申请日：2008-09-26

Applicant: FUJIFILM CORP

Inventor： AKIBA MASAHARU ,  TAKIZAWA HIROO

IPC: G11B7/245 ,  G11B7/246 ,  G11B7/247 ,  G11B7/248

公开(公告)号：EP2756353A4

公开(公告)日：2015-04-29

申请号：EP12831380

申请日：2012-09-11

Applicant: FUJIFILM CORP

Inventor： TAKIZAWA HIROO ,  TSUBAKI HIDEAKI ,  HIRANO SHUJI

IPC: G03F7/038 ,  C08F212/14 ,  C08F220/10 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0041 ,  C08F12/20 ,  C08F12/24 ,  C08F212/14 ,  C08F212/32 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2037 ,  G03F7/2059 ,  G03F7/325 ,  H01J37/3174

Abstract: A pattern-forming method includes in this order: step (1) of forming a film with an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition that contains (A) a resin having an acid-decomposable repeating unit and capable of decreasing a solubility of the resin (A) in a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an electron beam or extreme ultraviolet radiation and (C) a solvent; step (2) of exposing the film with an electron beam or extreme ultraviolet radiation; and step (4) of forming a negative pattern by development of the film with a developer containing an organic solvent after the exposing of the film, wherein a content of the compound (B) is 21% by mass to 70% by mass on the basis of all solids content of the composition.

公开(公告)号：EP3116032A4

公开(公告)日：2017-03-29

申请号：EP15758546

申请日：2015-02-26

Applicant: FUJIFILM CORP

Inventor： TAKIZAWA HIROO ,  YOSHIDA HAYATO ,  KIMURA KEIZO ,  YOKOI KAZUHIRO

IPC: H01L29/786 ,  H01L21/312 ,  H01L21/336 ,  H01L51/05 ,  H01L51/30

CPC classification number: H01L51/052 ,  H01L51/0073 ,  H01L51/0074

Abstract: An organic thin-film transistor having, on a substrate, a gate electrode, an organic semiconductor layer, a gate insulating layer provided between the gate electrode and the organic semiconductor layer, a source electrode and a drain electrode provided in contact with the organic semiconductor layer and coupled together through the organic semiconductor layer, the organic semiconductor layer being provided in contact with a layer formed by the mircrophase separation of a block copolymer.

Abstract translation: 一种有机薄膜晶体管，在基板上具有栅电极，有机半导体层，设置在栅电极和有机半导体层之间的栅极绝缘层，源电极和漏电极，其与有机半导体接触 层，并且通过有机半导体层耦合在一起，有机半导体层设置成与通过嵌段共聚物的微层分离形成的层接触。

公开(公告)号：EP2761374A4

公开(公告)日：2015-05-27

申请号：EP12837295

申请日：2012-09-14

Applicant: FUJIFILM CORP

Inventor： TAKIZAWA HIROO ,  IWATO KAORU ,  TSUBAKI HIDEAKI

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0388 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/405

公开(公告)号：EP3125277A4

公开(公告)日：2017-03-29

申请号：EP15769500

申请日：2015-03-23

Applicant: FUJIFILM CORP

Inventor： NAGATA YUZO ,  TAKIZAWA HIROO ,  TSUCHIMURA TOMOTAKA ,  TSURUTA TAKUYA

IPC: H01L21/312 ,  C08F212/00 ,  C08F220/10 ,  H01L21/283 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30

CPC classification number: H01L51/004 ,  C08F12/22 ,  C08F12/24 ,  C08F20/28 ,  C08F212/14 ,  C08F2500/02 ,  C08F2800/10 ,  C08F2810/20 ,  H01L21/02118 ,  H01L29/786 ,  H01L51/0043 ,  H01L51/0055 ,  H01L51/0071 ,  H01L51/0094 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0566 ,  C08F2220/325 ,  C08F212/32 ,  C08F212/145 ,  C08F220/36 ,  C08F2220/302 ,  C08F2220/343

Abstract: Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB). In General Formula (IA), R 1a represents a hydrogen atom, a halogen atom, or an alkyl group. L 1a and L 2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other. m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L 2a -(X) m2a )'s may be the same or different from each other. In General Formula (IB),' R 1b represents a hydrogen atom, a halogen atom, or an alkyl group. L 1b represents a single bond or a linking group, and Ar 1b represents an aromatic ring. m1b represents an integer of 1 to 5.