公开(公告)号：EP2310842A4

公开(公告)日：2011-11-09

申请号：EP09805408

申请日：2009-08-04

Applicant: GEN ELECTRIC

Inventor： DUTHIE ROBERT SCOTT ,  TIAN WEI-CHENG ,  KHURANA TARUN

IPC: G01N27/26 ,  C12N15/09 ,  C12N15/10

CPC classification number: G01N1/34 ,  B01L3/50273 ,  C12M23/16 ,  C12M47/12 ,  C12N15/1003 ,  G01N27/447 ,  G01N30/24

公开(公告)号：JP2006343315A

公开(公告)日：2006-12-21

申请号：JP2005376828

申请日：2005-12-28

Applicant: GEN ELECTRIC

Inventor： LEE WARREN ,  MILLS DAVID M ,  CLAYDON GLENN S ,  RIGBY KENNETH WAYNE ,  TIAN WEI-CHENG ,  LI YE-MING ,  SUN JIE ,  SMITH LOWELL SCOTT ,  CHU STANLEY CHIEWU ,  WONG SAM YIE-SUM ,  KWON HYON-JIN

IPC: G01N29/24 ,  A61B8/00 ,  B81B7/04 ,  G01N29/06 ,  G01S7/521 ,  H01L29/84 ,  H04R1/40 ,  H04R17/00 ,  H04R19/00

Abstract: PROBLEM TO BE SOLVED: To isolate a short-circuited sensor cell for a highly reliable operation of a sensor array to neglect an influence onto imaging performance, as to an array of a finely machined ultrasonic transducer. SOLUTION: The present invention provides a device having a sensor array and a number of bus lines. Each of sensors is connected electrically to each of the bus lines and includes a large number of groups 58 of the finely machined sensor cells. The sensor cell groups for the specified sensor are electrically connected each other via the bus line with the sensor connected thereto, and each of the sensor cell groups includes the large number of finely machined sensor cells 2 connected electrically each other, and not disconnectable switchingly each other. The device further includes a means (for example, short-circuiting protection module including a fuse or current sensor circuit, and an electric isolation switch) for isolating anyone of the sensor cell groups from the related bus line, in response to the fact that the anyone out of the large number of finely machined sensor cells in anyone of the sensor cell groups is short-circuited to grounding. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：DE602005002683D1

公开(公告)日：2007-11-15

申请号：DE602005002683

申请日：2005-06-07

Applicant: GEN ELECTRIC

Inventor： BERKCAN ERTUGRUL ,  KAPUSTA CHRISTOPHER JAMES ,  CLAYDON GLENN SCOTT ,  ZRIBI ANIS ,  MEYER LAURA JEAN ,  TIAN WEI-CHENG

IPC: G01R33/028 ,  G01R15/20

Abstract: A micro-electromechanical system, MEMS, current sensor is described as including a first conductor, a magnetic field shaping component (5) for shaping a magnetic field (20) produced by a current (I) in the first conductor, and a MEMS-based magnetic field sensing component (25) including a magneto-MEMS component (30) for sensing the shaped magnetic field and, in response thereto, providing an indication (80) of the current in the first conductor. A method for sensing a current using MEMS is also described as including shaping a magnetic field produced with a current in a first conductor, sensing the shaped magnetic field with a MEMS-based magnetic field sensing component having a magneto-MEMS component magnetic field sensing circuit, and providing an indication of the current in the first conductor.

公开(公告)号：DE102007007178A1

公开(公告)日：2007-08-30

申请号：DE102007007178

申请日：2007-02-09

Applicant: GEN ELECTRIC

Inventor： TIAN WEI-CHENG ,  WEI CHING-YEU ,  FISHER RAYETTE A ,  CHU STANLEY CHIENWU ,  SMITH LOWELL SCOTT ,  WODNICKI ROBERT G ,  MILLS DAVID M ,  KWON HYON-JIN

IPC: B81C1/00 ,  A61B8/00 ,  B81B7/02 ,  G03B42/06 ,  H01L21/58 ,  H01L23/055 ,  H04R17/00

Abstract: A method of making a capacitive micromachined ultrasound transducer cell is provided. The method includes providing a carrier substrate, where the carrier substrate comprises glass. The step of providing the glass substrate may include forming vias in the glass substrate. Further, the method includes providing a membrane such that at least one of the carrier substrate, or the membrane comprises support posts, where the support posts are configured to define a cavity depth. The method further includes bonding the membrane to the carrier substrate by using the support posts, where the carrier substrate, the membrane and the support posts define an acoustic cavity.

公开(公告)号：AT374952T

公开(公告)日：2007-10-15

申请号：AT05253492

申请日：2005-06-07

Applicant: GEN ELECTRIC

Inventor： BERKCAN ERTUGRUL ,  KAPUSTA CHRISTOPHER JAMES ,  CLAYDON GLENN SCOTT ,  ZRIBI ANIS ,  MEYER LAURA JEAN ,  TIAN WEI-CHENG

IPC: G01R33/028 ,  G01R15/20

Abstract: A micro-electromechanical system, MEMS, current sensor is described as including a first conductor, a magnetic field shaping component (5) for shaping a magnetic field (20) produced by a current (I) in the first conductor, and a MEMS-based magnetic field sensing component (25) including a magneto-MEMS component (30) for sensing the shaped magnetic field and, in response thereto, providing an indication (80) of the current in the first conductor. A method for sensing a current using MEMS is also described as including shaping a magnetic field produced with a current in a first conductor, sensing the shaped magnetic field with a MEMS-based magnetic field sensing component having a magneto-MEMS component magnetic field sensing circuit, and providing an indication of the current in the first conductor.

公开(公告)号：JP2006186999A

公开(公告)日：2006-07-13

申请号：JP2005367304

申请日：2005-12-21

Applicant: GEN ELECTRIC

Inventor： SMITH LOWELL SCOTT ,  MILLS DAVID MARTIN ,  FORTIN JEFFREY BERNARD ,  TIAN WEI-CHENG ,  LOGAN JOHN ROBERT

IPC: H04R19/00 ,  B81B3/00 ,  B81C3/00 ,  H04R31/00

Abstract: PROBLEM TO BE SOLVED: To provide capacitive micromachined ultrasound transducer (cMUT) and method of manufacturing the same. SOLUTION: A capacitive micromachined ultrasound transducer (cMUT) cell (10) is provided. This cMUT cell (10) includes a lower electrode (18). Furthermore, the cMUT cell (10) includes a diaphragm (22) disposed adjacent to the lower electrode (18) such that a gap having a first gap width is formed between the diaphragm and the lower electrode (18), wherein the diaphragm (22) comprises one of a first epitaxial layer (40) or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer (40). COPYRIGHT: (C)2006,JPO&NCIPI

公开(公告)号：DE602005002683T2

公开(公告)日：2008-07-17

申请号：DE602005002683

申请日：2005-06-07

Applicant: GEN ELECTRIC

Inventor： BERKCAN ERTUGRUL ,  KAPUSTA CHRISTOPHER JAMES ,  CLAYDON GLENN SCOTT ,  ZRIBI ANIS ,  MEYER LAURA JEAN ,  TIAN WEI-CHENG

IPC: G01R33/028 ,  G01R15/20

Abstract: A micro-electromechanical system, MEMS, current sensor is described as including a first conductor, a magnetic field shaping component (5) for shaping a magnetic field (20) produced by a current (I) in the first conductor, and a MEMS-based magnetic field sensing component (25) including a magneto-MEMS component (30) for sensing the shaped magnetic field and, in response thereto, providing an indication (80) of the current in the first conductor. A method for sensing a current using MEMS is also described as including shaping a magnetic field produced with a current in a first conductor, sensing the shaped magnetic field with a MEMS-based magnetic field sensing component having a magneto-MEMS component magnetic field sensing circuit, and providing an indication of the current in the first conductor.

公开(公告)号：CA2545630A1

公开(公告)日：2005-06-09

申请号：CA2545630

申请日：2004-11-18

Applicant: GEN ELECTRIC

Inventor： KNOBLOCH AARON JAY ,  ZRIBI ANIS ,  SCHULTZ GERALD ,  TIAN WEI-CHENG

IPC: G01N25/48

Abstract: The invention provides a miniaturized sensor device (10) including a thin fi lm membrane (12) having a first surface and a second surface, one or more resistive thin film heater/thermometer devices (20) disposed directly or indirectly adjacent to the first surface of the thin film membrane (12), and a frame (14) disposed directly or indirectly adjacent to the second surface of the thin film membrane (12), wherein one or more internal surfaces of the frame (14) define at least one cell (18) having at least one opening. The sensor device (10) also includes a thin film layer (16) disposed directly or indirectly adjacent to the frame (14). The sensor device (10) further includ es a sensing layer (22) disposed directly or indirectly adjacent to the thin fi lm membrane (12).