ELECTRO CERAMIC MEMS STRUCTURE WITH OVERSIZED ELECTRODES
    1.
    发明申请
    ELECTRO CERAMIC MEMS STRUCTURE WITH OVERSIZED ELECTRODES 审中-公开
    具有超大电极的电陶瓷MEMS结构

    公开(公告)号:WO2003012811A1

    公开(公告)日:2003-02-13

    申请号:PCT/US2002/023424

    申请日:2002-07-22

    CPC classification number: H01H59/0009

    Abstract: An array apparatus has a micromachined SOI structure (22), such as a MEMS array, mounted directly on a class of substrate (24), such as low temperature co-fired ceramic, in which is embedded electrostatic actuation electrodes (26-29) disposed in substantial alignment with the individual MEMS elements, where the electrostatic electrodes (26-29) are configured for substantial fanout and the electrodes (26-29) are oversized such that in combination with the ceramic assembly are configured to allow for placement of the vias (36-37) within a tolerance of position relative to electrodes (26-29) such that contact is not lost therebetween at the time of manufacturing.

    Abstract translation: 阵列装置具有微机械加工的SOI结构(例如MEMS阵列),其直接安装在诸如低温共烧陶瓷之类的基底(24)上,其中嵌有静电致动电极(26-29) 设置成与各个MEMS元件基本上对准,其中静电电极(26-29)被配置为实质上扇出,并且电极(26-29)被加大尺寸,使得与陶瓷组件组合以允许放置 通孔(36-37)在相对于电极(26-29)的位置的公差范围内,使得在制造时不会发生接触。

    ELECTRO CERAMIC MEMS STRUCTURE WITH CONTROLLED ACTUATOR GAP
    2.
    发明申请
    ELECTRO CERAMIC MEMS STRUCTURE WITH CONTROLLED ACTUATOR GAP 审中-公开
    电子陶瓷MEMS结构与控制执行器GAP

    公开(公告)号:WO2003012171A1

    公开(公告)日:2003-02-13

    申请号:PCT/US2002/023421

    申请日:2002-07-22

    CPC classification number: B81B3/0086 B81B2201/042

    Abstract: In an array apparatus, each MEMS element, comprising an actuatable element and a supportive handle, is mounted over a plurality of electrodes (26, 27) wherein an air gap is controlled by the thickness of the electrodes and not primarily by the structure of the handle (20). The structure of electrostatic actuation electrodes in specific embodiments is disclosed. While the invention is primarily a technique for reducing the air gap (52) without unduly limiting the thickness of the handle, the invention may also be used to establish an air gap greater than the thickness of the handle.

    Abstract translation: 在阵列装置中,包括可致动元件和支撑手柄的每个MEMS元件安装在多个电极(26,27)上,其中气隙由电极的厚度控制,而不主要由电极的结构 手柄(20)。 在具体实施例中公开了静电致动电极的结构。 尽管本发明主要是用于减小气隙(52)而不过度地限制手柄厚度的技术,但是本发明也可用于建立大于手柄厚度的气隙。

    MEMS HYBRID STRUCTURE HAVING FLIPPED SILICON WITH EXTERNAL STANDOFFS
    3.
    发明申请
    MEMS HYBRID STRUCTURE HAVING FLIPPED SILICON WITH EXTERNAL STANDOFFS 审中-公开
    具有外部标准的溜槽硅的MEMS混合结构

    公开(公告)号:WO2003032402A1

    公开(公告)日:2003-04-17

    申请号:PCT/US2002/032400

    申请日:2002-10-08

    CPC classification number: B81B3/0086

    Abstract: A structure of a hybrid MEMS structure is provided wherein a plate comprises a thin actuatable layer of conductive silicon, such as a MEMS actuatable element, and a thicker handle layer of conductive silicon to provide structural integrity which are separated by a thin oxide, together forming an SOI wafer. This plate is mounted to a substrate, typically ceramic, with the thin actuatable layer facing the substrate and separated by an air gap that is formed by creating, on the substrate, insulator standoffs which come in contact with the plate. A suitable dielectric material useful as a standoff on the substrate is a footrest that permits high aspect ratios.

    Abstract translation: 提供了混合MEMS结构的结构,其中板包括导电硅的薄可致动层,例如MEMS可致动元件,以及较厚的导电硅手柄层,以提供由薄氧化物隔开的结构完整性,一起形成 SOI晶片。 该板被安装到通常为陶瓷的基板上,薄的可致动层面向基板,并由通过在基板上产生与板接触的绝缘体间隙而形成的气隙分开。 用作衬底上的支座的合适的介电材料是允许高纵横比的搁脚板。

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