公开(公告)号：WO2004003619A1

公开(公告)日：2004-01-08

申请号：PCT/US2003/020143

申请日：2003-06-24

Applicant: GLIMMERGLASS NETWORKS, INC.

Inventor： STAKER, Bryan, P. ,  SPALLAS, James, P. ,  MURAY, Lawrence, P. ,  FERNANDEZ, Andres

IPC: G02B7/182

CPC classification number: B81B3/0051 ,  B81B2201/042 ,  G02B26/0841

Abstract: A mirror (12) is mounted on a first pair of hinges (14, 16) to a gimble (18). The gimble (18) is connected by a second pair of hinges (20, 21) having one degree of freedom to a frame (24) wherein an oxide layer (25) is provided for bonding and etch stop during manufacturing.

Abstract translation: 一个反射镜（12）安装在第一对铰链（14,16）上到一个柔性件（18）上。 弹性件（18）通过具有一个自由度的第二对铰链（20,21）连接到框架（24），其中提供氧化物层（25）用于在制造期间进行接合和蚀刻停止。

公开(公告)号：WO2003090261A1

公开(公告)日：2003-10-30

申请号：PCT/US2003/012311

申请日：2003-04-21

Applicant: GLIMMERGLASS NETWORKS, INC.

Inventor： SPALLAS, James, P. ,  FERNANDEZ, Andres ,  DEBEY, Thomas ,  MURAY, Lawrence, P.

IPC: H01L21/00

CPC classification number: B81C1/00119 ,  B81B2201/042 ,  B81C2201/0104 ,  B81C2201/014 ,  B81C2201/017 ,  B81C2201/019

Abstract: Method for fabricating ultrathin gaps producing ultrashort standoffs (26) in array structures includes sandwiching a patterned device layer (12) between a silicon standoff layer (26) and a silicon support layer (38), providing that the back surfaces (46, 48) of the respective silicon support layer and the standoff layer are polished to a desired thickness corresponding to the desired standoff height on one side and to at least a minimum height for mechanical strength on the opposing side, as well as to a desired smoothness. Standoffs and mechanical supports are then fabricated by etching to produce voids with the dielectric oxides (20, 40) on both sides of the device layer serving as suitable etch stops. Thereafter, the exposed portions of the oxide layers are removed to release the pattern, and a package layer is mated with the standoff voids to produce a finished device. The standoff layer can be fabricated to counteract curvature.

Abstract translation: 用于制造在阵列结构中产生超短距离（26）的超薄间隙的方法包括在硅间隔层（26）和硅支撑层（38）之间夹着图案化的器件层（12），只要后表面（46,48） 将相应的硅支撑层和支座层抛光到对应于一侧上所需的间隔高度的期望厚度，并且至少在相对侧上的机械强度的最小高度以及期望的平滑度。 然后通过蚀刻制造支座和机械支撑件以产生空隙，其中装置层两侧的电介质氧化物（20,40）用作合适的蚀刻停止点。 此后，去除氧化物层的暴露部分以释放图案，并且将封装层与间隙空隙配合以产生成品装置。 可以制造隔离层以抵消曲率。