公开(公告)号：US11367750B2

公开(公告)日：2022-06-21

申请号：US16439101

申请日：2019-06-12

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Sunil Kumar Singh ,  Xuan Anh Tran ,  Eswar Ramanathan ,  Suryanarayana Kalaga ,  Craig M. Child ,  Robert Fox

IPC: H01L27/24 ,  H01L45/00

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a vertical memory devices and methods of manufacture. The structure includes: a first bit cell with a first top electrode; a second bit cell with a second top electrode; and a common bottom electrode for both the first bit cell and the second bit cell.