公开(公告)号：US11211448B2

公开(公告)日：2021-12-28

申请号：US16704180

申请日：2019-12-05

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Sunil K. Singh ,  Eswar Ramanathan

IPC: H01L23/522 ,  H01L49/02 ,  H01L21/768

Abstract: A capacitor structure for an integrated circuit (IC) is provided. The capacitor structure includes a plurality of spaced metal pillars with each metal pillar positioned on a corresponding underlying metal wire of an underlying metal layer. A metal-insulator-metal layer is positioned over and between the metal pillars. At least one contact is operatively coupled to a first metal pillar of the plurality of metal pillars. The metal-insulator-metal layer creates a MIM capacitor that undulates over the metal pillars, creating a higher density capacitance compared to conventional planar MIM capacitors. The metal pillars extend into the metal-insulator-metal layer, which reduces contact resistance. The capacitor structure can be integrated into an IC with no major integration issues. A related method is also provided.

公开(公告)号：US11233191B2

公开(公告)日：2022-01-25

申请号：US16142432

申请日：2018-09-26

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey P. Jacob ,  Eswar Ramanathan

IPC: H01L43/00 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

Abstract: Integrated circuits with embedded memory structures, and methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit includes forming first and second conductive interconnects over a semiconductor substrate. The method includes depositing a conductive material over the first conductive interconnect. Also, the method includes forming a memory structure over the conductive material, wherein the memory structure has an uppermost surface distanced from the first conductive interconnect by a first height. Further, the method includes forming an interlayer dielectric over the memory structure and forming a conductive via coupled to the second conductive interconnect, wherein the conductive via has a second height over the second conductive interconnect less than the first height. The method also includes forming first and second contact plugs through the interlayer dielectric. The first contact plug contacts the memory structure and the second contact plug contacts the conductive via.

公开(公告)号：US20210066126A1

公开(公告)日：2021-03-04

申请号：US16556465

申请日：2019-08-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Eswar Ramanathan ,  Sunil Kumar Singh ,  Xuan Anh Tran ,  Suryanarayana Kalaga ,  Juan Boon Tan

IPC: H01L21/768 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L27/24 ,  H01L45/00 ,  H01L27/11507

Abstract: One illustrative method disclosed herein includes forming at least one first layer of insulating material above an upper surface of a top electrode of a memory cell, forming a patterned etch stop layer above the at least one first layer of insulating material, wherein the patterned etch stop layer has an opening that is positioned vertically above at least a portion of the upper surface of the top electrode and forming at least one second layer of insulating material above an upper surface of the etch stop layer. The method also includes forming a conductive contact opening that extends through the etch stop layer to expose at least a portion of the upper surface of the top electrode and forming a conductive contact structure in the conductive contact opening, wherein the conductive contact structure is conductively coupled to the upper surface of the top electrode.

公开(公告)号：US11515205B2

公开(公告)日：2022-11-29

申请号：US16556465

申请日：2019-08-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Eswar Ramanathan ,  Sunil Kumar Singh ,  Xuan Anh Tran ,  Suryanarayana Kalaga ,  Juan Boon Tan

IPC: H01L21/768 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L27/11507 ,  H01L45/00 ,  H01L27/24

Abstract: One illustrative method disclosed herein includes forming at least one first layer of insulating material above an upper surface of a top electrode of a memory cell, forming a patterned etch stop layer above the at least one first layer of insulating material, wherein the patterned etch stop layer has an opening that is positioned vertically above at least a portion of the upper surface of the top electrode and forming at least one second layer of insulating material above an upper surface of the etch stop layer. The method also includes forming a conductive contact opening that extends through the etch stop layer to expose at least a portion of the upper surface of the top electrode and forming a conductive contact structure in the conductive contact opening, wherein the conductive contact structure is conductively coupled to the upper surface of the top electrode.

公开(公告)号：US11367750B2

公开(公告)日：2022-06-21

申请号：US16439101

申请日：2019-06-12

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Sunil Kumar Singh ,  Xuan Anh Tran ,  Eswar Ramanathan ,  Suryanarayana Kalaga ,  Craig M. Child ,  Robert Fox

IPC: H01L27/24 ,  H01L45/00

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a vertical memory devices and methods of manufacture. The structure includes: a first bit cell with a first top electrode; a second bit cell with a second top electrode; and a common bottom electrode for both the first bit cell and the second bit cell.

公开(公告)号：US11094585B2

公开(公告)日：2021-08-17

申请号：US16504737

申请日：2019-07-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Xuan Anh Tran ,  Eswar Ramanathan ,  Sunil Kumar Singh ,  Suryanarayana Kalaga ,  Suresh Kumar Regonda ,  Juan Boon Tan

IPC: H01L21/768 ,  H01L23/535 ,  H01L43/02 ,  H01L45/00 ,  H01L27/22 ,  H01L27/11502 ,  H01L43/12

Abstract: One illustrative method disclosed herein includes, among other things, selectively forming a sacrificial material on an upper surface of a top electrode of a memory cell, forming at least one layer of insulating material around the sacrificial material and removing the sacrificial material so as to form an opening in the at least one layer of insulating material, wherein the opening exposes the upper surface of the top electrode. The method also includes forming an internal sidewall spacer within the opening in the at least one layer of insulating material and forming a conductive contact structure that is conductively coupled to the upper surface of the top electrode, wherein a portion of the conductive contact structure is surrounded by the internal sidewall spacer.

公开(公告)号：US20210175323A1

公开(公告)日：2021-06-10

申请号：US16704180

申请日：2019-12-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Sunil K. Singh ,  Eswar Ramanathan

IPC: H01L49/02 ,  H01L23/522 ,  H01L21/768

Abstract: A capacitor structure for an integrated circuit (IC) is provided. The capacitor structure includes a plurality of spaced metal pillars with each metal pillar positioned on a corresponding underlying metal wire of an underlying metal layer. A metal-insulator-metal layer is positioned over and between the metal pillars. At least one contact is operatively coupled to a first metal pillar of the plurality of metal pillars. The metal-insulator-metal layer creates a MIM capacitor that undulates over the metal pillars, creating a higher density capacitance compared to conventional planar MIM capacitors. The metal pillars extend into the metal-insulator-metal layer, which reduces contact resistance. The capacitor structure can be integrated into an IC with no major integration issues. A related method is also provided.