公开(公告)号：US20240170561A1

公开(公告)日：2024-05-23

申请号：US17990931

申请日：2022-11-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： Vibhor Jain ,  Jeffrey Johnson ,  Viorel Ontalus ,  John J. Pekarik

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/7378 ,  H01L29/0817 ,  H01L29/66242

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. The structure comprises an emitter, a collector including a first section, a second section, and a third section positioned in a first direction between the first section and the second section, and an intrinsic base disposed in a second direction between the emitter and the third section of the collector. The structure further comprises a stress layer including a section positioned to overlap with the emitter, the intrinsic base, and the collector. The section of the stress layer is surrounded by a perimeter, and the first and second sections of the collector are each positioned adjacent to the perimeter of the stress layer.

公开(公告)号：US20240072180A1

公开(公告)日：2024-02-29

申请号：US17896711

申请日：2022-08-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Saloni Chaurasia ,  Jeffrey Johnson ,  Vibhor Jain ,  Crystal R. Kenney ,  Sudesh Saroop ,  Teng-Yin Lin ,  John J. Pekarik

IPC: H01L29/93 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/93 ,  H01L29/1095 ,  H01L29/66174

Abstract: Structures for a varactor diode and methods of forming same. The structure comprises a first semiconductor layer including a section on a substrate, a second semiconductor layer on the section of the first semiconductor layer, a third semiconductor layer on the second semiconductor layer, and a doped region in the section of the first semiconductor layer. The section of the first semiconductor layer and the doped region have a first conductivity type, and the second semiconductor layer comprises silicon-germanium having a second conductivity type opposite to the first conductivity type, and the third semiconductor layer has the second conductivity type. The doped region contains a higher concentration of a dopant of the first conductivity type than the section of the first semiconductor layer. The second semiconductor layer abuts the first section of the first semiconductor layer along an interface, and the doped region is positioned adjacent to the interface.

公开(公告)号：US11721722B2

公开(公告)日：2023-08-08

申请号：US17524438

申请日：2021-11-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Man Gu ,  Jagar Singh ,  Haiting Wang ,  Jeffrey Johnson

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/735 ,  H01L29/737 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/1008 ,  H01L29/0649 ,  H01L29/0808 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/735 ,  H01L29/737 ,  H01L29/7842

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a collector having a raised portion, an emitter having a raised portion, and a base laterally arranged between the raised portion of the emitter and the raised portion of the collector. The base includes an intrinsic base layer and an extrinsic base layer stacked with the intrinsic base layer. The structure further includes a stress liner positioned to overlap with the raised portion of the collector, the raised portion of the emitter, and the extrinsic base layer.

公开(公告)号：US20230063900A1

公开(公告)日：2023-03-02

申请号：US17524438

申请日：2021-11-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Man Gu ,  Jagar Singh ,  Haiting Wang ,  Jeffrey Johnson

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/735 ,  H01L29/737 ,  H01L29/06

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a collector having a raised portion, an emitter having a raised portion, and a base laterally arranged between the raised portion of the emitter and the raised portion of the collector. The base includes an intrinsic base layer and an extrinsic base layer stacked with the intrinsic base layer. The structure further includes a stress liner positioned to overlap with the raised portion of the collector, the raised portion of the emitter, and the extrinsic base layer.