公开(公告)号：EP4418320A1

公开(公告)日：2024-08-21

申请号：EP23191650.3

申请日：2023-08-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pritchard, David Charles ,  Mazza, James P. ,  Jain, Navneet K. ,  Yu, Hong

IPC: H01L27/02 ,  H01L27/118 ,  H01L21/8238

CPC classification number: H01L27/0207 ,  H01L27/11807 ,  H01L2027/1186620130101 ,  H01L21/823828 ,  H01L21/823878 ,  H01L21/823871 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/088 ,  H01L27/092

Abstract: A standard cell or integrated circuit (IC) structure includes a substrate including a first active region and a second active region. A first gate electrode is over the first active region; and a second gate electrode over the second active region. A trench isolation electrically isolates the first active region and the first gate electrode from the second active region and the second gate electrode. First ends of the first active region and the first gate electrode abut a first sidewall of the trench isolation and first ends of the second active region and the second gate electrode abut a second, opposing sidewall of the trench isolation. A conductive strap extends over an upper end of the trench isolation and electrically couples the first gate electrode and the second gate electrode.

公开(公告)号：EP4376094A2

公开(公告)日：2024-05-29

申请号：EP23196323.2

申请日：2023-09-08

Applicant: GlobalFoundries U.S. Inc.

Inventor： Borisov, Kiril Biserov ,  Darwish, Mohammed Ahmed Fouad Ibrahim ,  Weisbuch, Francois C. ,  Elshafie, Shady Ahmed Abdelwahed Ahmed ,  Pritchard, David Charles ,  Ramadout, Benoit Francois Claude

IPC: H01L29/78 ,  H01L27/02

CPC classification number: H01L27/0207 ,  H01L29/0692 ,  H01L29/78

Abstract: Embodiments of the disclosure provide a gate structure over a corner segment of a semiconductor region. A structure according to the disclosure includes a semiconductor region within a substrate. The semiconductor region includes a first edge, a second edge oriented perpendicularly to the first edge, and a first corner segment connecting the first edge to the second edge. A first gate structure extends over the first edge, and entirely covers the first edge and the first corner segment of the semiconductor region.

公开(公告)号：EP4376094A3

公开(公告)日：2024-07-31

申请号：EP23196323.2

申请日：2023-09-08

Applicant: GlobalFoundries U.S. Inc.

Inventor： Borisov, Kiril Biserov ,  Darwish, Mohammed Ahmed Fouad Ibrahim ,  Weisbuch, Francois C. ,  Elshafie, Shady Ahmed Abdelwahed Ahmed ,  Pritchard, David Charles ,  Ramadout, Benoit Francois Claude

IPC: H01L29/78 ,  H01L27/02

CPC classification number: H01L27/0207 ,  H01L29/0692 ,  H01L29/78

Abstract: Embodiments of the disclosure provide a gate structure over a corner segment of a semiconductor region. A structure according to the disclosure includes a semiconductor region within a substrate. The semiconductor region includes a first edge, a second edge oriented perpendicularly to the first edge, and a first corner segment connecting the first edge to the second edge. A first gate structure extends over the first edge, and entirely covers the first edge and the first corner segment of the semiconductor region.

公开(公告)号：EP4517722A1

公开(公告)日：2025-03-05

申请号：EP24159005.8

申请日：2024-02-22

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pritchard, David Charles ,  Raghavan, Ramesh ,  Ranganathan, Thirunavukkarasu ,  Tummuru, Rajesh Reddy ,  Ramadout, Benoit Francois Claude ,  Pirro, Luca

IPC: G09C1/00 ,  H04L9/08 ,  H04L9/32 ,  H10B10/00

Abstract: Embodiments of the disclosure provide a structure and related method for a gate over semiconductor regions that are not aligned. Structures according to the disclosure include a first semiconductor region extending from a first widthwise end to a second widthwise end within a substrate. A second semiconductor region is adjacent the first semiconductor region and extends from a first widthwise end to a second widthwise end within the substrate. The second widthwise end of the second semiconductor region is non-aligned with the second widthwise end of the first semiconductor region. A gate structure is over the substrate and extends widthwise over the first semiconductor region and the second semiconductor region.