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公开(公告)号：JP2000021297A
公开(公告)日：2000-01-21
申请号：JP18463698
申请日：1998-06-30
Applicant: HAMAMATSU PHOTONICS KK
Inventor： FUTAHASHI TOKUAKI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor photo-electric cathode capable of increasing quantum efficiency of forming a semiconductor optical absorption layer with high crystallinity. SOLUTION: This semiconductor photo-electric cathode has a semiconductor optical absorption layer 3 formed on a buffer layer 2 on a substrate 1 and for converting incident light into an electron; and an alkali metal-containing layer 5 formed on the semiconductor optical absorption layer 3 and for emitting the electron into vacuum. The buffer layer 2 has a graded semiconductor layer 2b whose composition is gradually varied so that a lattice constant on the substrate 1 side almost agrees with that of the substrate 1 and a lattice constant on the semiconductor optical absorption layer 3 side almost agrees with that of the semiconductor optical absorption layer 3, and thereby, the crystallinity of the semiconductor optical absorption layer 3 formed on the buffer layer 2 is improved, the life of an electron existing in the semiconductor photo absorption layer 3 is lengthened, and quantum efficiency is enhanced.
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公开(公告)号：JPH04324227A
公开(公告)日：1992-11-13
申请号：JP9222991
申请日：1991-04-23
Applicant: HAMAMATSU PHOTONICS KK
Inventor： FUTAHASHI TOKUAKI , ARAGAKI MINORU , NAGAI TOSHIMITSU , KIBUNE ATSUSHI , OTA MASASHI
Abstract: PURPOSE:To improve a transmission type photoelectric surface used in an image tube. CONSTITUTION:The interface between a window layer and a reflection preventive film has a very good optical characteristic, because very thin layers 8 and 41 are interposed between the window layer 4 of a group III-V compound semiconductor including Al and the reflection perventive film 5, and the layers 8 and 41 are made a group III-V compond semiconductor excluding Al or an Al oxide film in which oxygen is firmly bonded to Al. Moreover a wavelike pattern inherent in a liquid phase growth method can be eliminated by using a gaseous phase growth method in the manufacturing process of a transmission type photoelectric surface.
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公开(公告)号：JPH04303535A
公开(公告)日：1992-10-27
申请号：JP8928491
申请日：1991-03-29
Applicant: HAMAMATSU PHOTONICS KK
Inventor： FUTAHASHI TOKUAKI
Abstract: PURPOSE:To maintain stable performance characteristic and high photoelectric conversion performance and to prevent emission of undesirable photoelectrons due to incident light from outside CONSTITUTION:A photoelectric conversion tube comprises a photoelectric surface consisting of a glass substrate 6 as a transparent substrate, a GaAs layer 3 formed on the glass substrate 6 and a CsAs layer 8 formed on this layer and a glass substrate 6, and includes a conductive silicon layer, optimally an amorphous silicon layer 7, in contact with the CsAs layer 8 and defining its periphery. The amorphous silicon layer 7 has a large absorption coefficient, so that light incident on the amorphous silicon layer 7 is absorbed there and there is thus no reflection at the GaAs layer. Therefore, undesirable emission of photoelectrons is prevented. The amorphous silicon layer 7 is in fine structure, so that it adheres intimately on a semiconductor electrode and the glass substrate 6; the vibrationproof property is thus good. The amorphous silicon layer 7 also prevents entry of minute substance into a semiconductor electrode.
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公开(公告)号：JPS62252043A
公开(公告)日：1987-11-02
申请号：JP9610786
申请日：1986-04-25
Applicant: HAMAMATSU PHOTONICS KK
Inventor： FUTAHASHI TOKUAKI
Abstract: PURPOSE:To reduce the uneven transmission efficiency of the phosphor radiation of individual photofibers, by making the incident surfaces in a curved surface for each optical fiber, and composing the interface between the phosphor material buried in the curved surface and the optical fiber, to act positively to the incident light from the phosphor material to the optical fiber when the center axis of the optical fibers acts as the optical axis. CONSTITUTION:While the end surfaces of the radiation of optical fiber plates are honed plainly and smoothly, the incident surface sides are processed to be concave at the phosphor layer 72 side, phosphors 72 are filled in the concaves, and a metallic pack layer 73 is formed at the surface. The electrons from a microchannel plate 6 penetrate through the metallic pack layer 73, and the lights generated by the electrons in the phosphor 72 are reflected to the optical fiber side. By giving a relation n1>n2, n2, between the refraction index of the phosphor material n1, that of the core 71c of the optical fiber 71, n2, and that of the clads 7ib, n2,, the interface between the phosphor layer 7 and the optical fiber 71 acts as a positive refraction surface to the light from the phosphor layer side when the central axis of the optical fibers 71 acts as the optical axis.
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公开(公告)号：JP2007165478A
公开(公告)日：2007-06-28
申请号：JP2005358050
申请日：2005-12-12
Applicant: Hamamatsu Photonics Kk , National Univ Corp Shizuoka Univ , 国立大学法人静岡大学 , 浜松ホトニクス株式会社
Inventor： SUMIYA MASATOMO , FUKUYA TOSHIRO , FUTAHASHI TOKUAKI , HAGINO MINORU
IPC: H01L31/09
CPC classification number: H01L31/09 , H01J2201/3423 , H01L31/0304 , Y02E10/544
Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric surface having a high quantum efficiency and a photo-detector using the photoelectric surface. SOLUTION: The photoelectric surface 10 has a first group III nitride semiconductor layer 8 generating photoelectrons in response to the incidence of ultraviolet rays L. The photoelectric surface 10 further has a second group III nitride semiconductor layer 6 being adjacently formed to the group III nitride semiconductor layer 8, and having an Al composition higher than that of the group III nitride semiconductor layer 8 while being composed of a thin-film crystal having a (c)-axis orientation in the thickness direction. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供具有高量子效率的光电表面和使用光电表面的光检测器。 解决方案：光电表面10具有响应于紫外线L的入射而产生光电子的第一III族氮化物半导体层8.光电表面10还具有与该组相邻形成的第二III族氮化物半导体层6 III族氮化物半导体层8，并且具有比III族氮化物半导体层8高的Al组成，同时由在厚度方向上具有（c）轴取向的薄膜晶体组成。 版权所有（C）2007，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：JP2007042559A
公开(公告)日：2007-02-15
申请号：JP2005228237
申请日：2005-08-05
Applicant: Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
Inventor： FUTAHASHI TOKUAKI
Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric surface improved in linearity characteristics while suppressing the pollution of the emission face of photoelectrons by introducing a conductive layer which maintains sufficient ultraviolet region transmittance, and a photoelectric cathode. SOLUTION: The photoelectric surface 1 is provided with a glass substrate 11 of which on one face ultraviolet rays enter, an adhesion layer 12 formed on the other face opposed to one face of the glass substrate 11, a group III nitride semiconductor layer 14 which is located on the side of the other face of the glass substrate 11 and generates photoelectrons according to the incidence of the ultraviolet rays, and an ultraviolet region transparent conductive layer 13 which is located between the adhesion layer 12 and the group III nitride semiconductor layer 14. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：通过引入保持足够的紫外线透射率的导电层和光电阴极来提供线性特性提高的光电表面，同时抑制光电子的发射面的污染。 解决方案：光电表面1设置有玻璃基板11，其一面是紫外线进入，形成在与玻璃基板11的一个面相对的另一面上的粘合层12，III族氮化物半导体层 14，其位于玻璃基板11的另一面的侧面，并且根据紫外线的入射率产生光电子，并且位于粘合层12和III族氮化物半导体之间的紫外区域透明导电层13 第14层。版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JPH11260248A
公开(公告)日：1999-09-24
申请号：JP5967698
申请日：1998-03-11
Applicant: HAMAMATSU PHOTONICS KK
Inventor： TAKEUCHI JUNICHI , FUTAHASHI TOKUAKI , SUZUKI YOSHITAKA , KONDOU HARUYASU
Abstract: PROBLEM TO BE SOLVED: To obtain a photocathode whose temperature characteristics and sensitivity characteristics can be improved. SOLUTION: This photocathode 5 is formed on a compound semiconductor layer 5c and equipped with an alkali-metal containing layer 5d, which contains one or more components selected from a group comprising K-O, Na, Na-O, Li, Li-O, Rb and Rb-O. Temperature characteristic and sensitivity characteristic of this photocathode 5 can be improved more than those of the photocathode formed by using Cs as the alkali-metal containing layer 5d.
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公开(公告)号：JPH10188782A
公开(公告)日：1998-07-21
申请号：JP35073396
申请日：1996-12-27
Applicant: HAMAMATSU PHOTONICS KK
Inventor： SUGA HIROBUMI , ARAGAKI MINORU , UCHIYAMA SHOICHI , TATENO MASUMI , FUTAHASHI TOKUAKI
Abstract: PROBLEM TO BE SOLVED: To provide a photocathode, which has high spectral sensitivity over a wide wavelength range, and an electron tube using the same. SOLUTION: A photocathode includes a sapphire substrate, an active layer formed from Inx1 (Aly1 Ga1-y1 )1-x1 N on the substrate to produce photoelectrons through the incidence of light for detection, and a buffer layer formed from Inx2 (Aly2 Ga1-y2 )1-x2 N between the substrate and the active layer to ease mismatching between the substrate and the active layer, the composition of Inx1 (Aly1 Ga1-y1 )1-x1 N being in the range of x1>0 and 0 0 and 0
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公开(公告)号：JPH10188779A
公开(公告)日：1998-07-21
申请号：JP34388296
申请日：1996-12-24
Applicant: HAMAMATSU PHOTONICS KK
Inventor： SUGA HIROBUMI , UCHIYAMA SHOICHI , ARAGAKI MINORU , TATENO MASUMI , FUTAHASHI TOKUAKI , TAKEUCHI JUNICHI
IPC: H01J1/34
Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric surface having a semiconductor or the like that is excellent in crystallinity. SOLUTION: This photoelectric surface 10 includes a substrate 11 made from LiGaO2 (LGO), a substrate protection layer 12 formed on the substrate 11 to thermally protect the substrate 11, and an active layer 13 formed on the substrate protection layer 12 to generate photoelectrons through the incidence of light, the substrate protection layer 12 and the active layer 123 being made from a crystal composed of at least one kind of component selected from a group consisting of AlN, GaN, and InN and being sensitive to ultraviolet light. This constitution allows the crystal and LGO to have almost equal lattice constants, improving lattice mismatching. Therefore, introduction of crystal defects depending on the sensitivity of the photoelectric surface 10 is restrained, and the substrate protection layer 2 and the active layer 13 are given an excellent crystallinity.
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公开(公告)号：JPH0896705A
公开(公告)日：1996-04-12
申请号：JP23131794
申请日：1994-09-27
Applicant: HAMAMATSU PHOTONICS KK
Inventor： FUTAHASHI TOKUAKI , HIROHATA TORU , SUZUKI HIDEKI , IHARA TSUNEO
Abstract: PURPOSE: To provide a semiconductor photoelectric cathode and photoelectric tube attaining high sensitivity by sharpening a long wavelength absorbing end while improving quantum efficiency. CONSTITUTION: A semiconductor photoelectric cathode 10, emitting a photoelectron induced by receiving incident light, is constituted of a photoabsorbing layer 34 formed of p-type Ga1-x AlxN(0
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