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公开(公告)号：JPH04324227A
公开(公告)日：1992-11-13
申请号：JP9222991
申请日：1991-04-23
Applicant: HAMAMATSU PHOTONICS KK
Inventor： FUTAHASHI TOKUAKI , ARAGAKI MINORU , NAGAI TOSHIMITSU , KIBUNE ATSUSHI , OTA MASASHI
Abstract: PURPOSE:To improve a transmission type photoelectric surface used in an image tube. CONSTITUTION:The interface between a window layer and a reflection preventive film has a very good optical characteristic, because very thin layers 8 and 41 are interposed between the window layer 4 of a group III-V compound semiconductor including Al and the reflection perventive film 5, and the layers 8 and 41 are made a group III-V compond semiconductor excluding Al or an Al oxide film in which oxygen is firmly bonded to Al. Moreover a wavelike pattern inherent in a liquid phase growth method can be eliminated by using a gaseous phase growth method in the manufacturing process of a transmission type photoelectric surface.
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2.发明专利
公开(公告)号：JP2003046202A
公开(公告)日：2003-02-14
申请号：JP2002000869
申请日：2002-01-07
Applicant: Hamamatsu Photonics Kk , Akihiro Ishida , 浜松ホトニクス株式会社 , 明広 石田
Inventor： ISHIDA AKIHIRO , FUJIYASU HIROSHI , OTA MASASHI
Abstract: PROBLEM TO BE SOLVED: To provide an optical functional compound semiconductor superlattice structure, multilayered material equipped with optical functionality and methods of manufacturing the structure and material.
SOLUTION: After a substrate 900 is moved to a position above a deposition chamber 300, Ga is caused to uniformly deposit on the surface of the substrate 900 by exposing the surface to Ga for an arbitrary period of time. Then the substrate 900 is moved to a position above another deposition chamber 200 and exposed to NH
3 for an arbitrary period of time. When the substrate 900 is exposed to the NH
3 , one atomic GaN layer is formed on the AlN of the substrate 900. Then Al is caused to deposit on the substrate 900 by moving the substrate 900 to a position above a third deposition chamber 400 and exposing the substrate 900 to TMA for an arbitrary period of time. In addition, the substrate 900 is again moved to the position above the deposition chamber 200, and the surface of the substrate 900 is again exposed to NH
3 for an arbitrary period of time. When the surface is exposed to the NH
3 , one atomic AlN layer is formed on the substrate 900. Thereafter, the optical functional compound semiconductor superlattice structure is obtained by alternately laminating several tens to hundreds of atomic GaN layers and several tens to hundreds of atomic AlN layers upon another by repeating the formation of GaN and AlN in prescribed order.
COPYRIGHT: (C)2003,JPOAbstract translation: 要解决的问题：提供光学功能化合物半导体超晶格结构，配备有光学功能的多层材料和制造该结构和材料的方法。 解决方案：在将基板900移动到沉积室300上方的位置之后，通过将表面暴露于Ga任意时间段，使Ga均匀地沉积在基板900的表面上。 然后将衬底900移动到另一沉积室200上方的一个位置并暴露于NH3任意一段时间。 当衬底900暴露于NH 3时，在衬底900的AlN上形成一个原子GaN层。然后通过将衬底900移动到第三沉积室400上方的位置并暴露于衬底900上而使Al沉积在衬底900上 基板900至TMA任意一段时间。 此外，衬底900再次移动到沉积室200上方的位置，并且衬底900的表面再次暴露于NH 3任意一段时间。 当表面暴露于NH 3时，在基板900上形成一个原子AlN层。此后，通过交替层叠几十到几百个原子的GaN层和几十到几百个原子的AlN，获得光学功能化合物半导体超晶格结构 通过以规定的顺序重复形成GaN和AlN，从而使层叠在另一层上。
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公开(公告)号：JPH04129134A
公开(公告)日：1992-04-30
申请号：JP24862490
申请日：1990-09-20
Applicant: HAMAMATSU PHOTONICS KK
Inventor： OTA MASASHI
Abstract: PURPOSE:To prevent degradation of photoelectric sensitivity, improve resolution and at the same time obtain wideband spectral sensitivity characteristics by forming a photoelectric surface and a micro-channel plate in one body by the use of a semiconductor monolithic crystal material. CONSTITUTION:A face plate 2 is disposed at the front part of a tube 1, and a fiber plate 6 is disposed at the back part thereof. And inside the face plate 2, a photoelectric surface with multiplier 7 composed by forming a photoelectric surface 3 and a micro-channel plate 4 in one body is disposed and a phosphor screen 5 is formed on a plate 6. That is, on the light emitting side of a GaAs photoelectric surface 3 formed on the face plate 2, the photoelectric surface 3 and the plate 4 are formed in one body with the use of a semiconductor monolithic crystal material. In this arrangement, when an incident light hnu enters into the photoelectric surface 3, electrons are generated therein and the generated electrons are discharged into the inner part of a channel 8 of the micro-channel plate 4. Thereby, wideband special sensitivity characteristics with sensitivity over the range of visible region to ultraviolet region are obtained and at the same time life characteristics are improved and the whole shape may be miniaturized.
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公开(公告)号：JPH0377232A
公开(公告)日：1991-04-02
申请号：JP21111289
申请日：1989-08-16
Applicant: HAMAMATSU PHOTONICS KK
Inventor： OTA MASASHI
Abstract: PURPOSE:To obtain sensitivity over a wide range from a visible region to a near infrared region by using InxGa1-xAs being III-V compound semiconductor as an active layer and ZnSeyTe1-y being II-VI compound semiconductor as a window material. CONSTITUTION:In a transmission semiconductor photoelectric surface 10, a photon transmitting substrate 13, a window material 14 comprising 3-component compound expressed by a general expression of ZnSeyTe1-y and an epitaxial layer 16 grid-aligned with the window material 14 comprising 3-component compound expressed by a general expression of InxGa1-xAs are laminated in this sequence to have the side of a substrate 12 to be a photo input surface and a free surface of the epitaxial layer 16 to be an electron emitting surface. An SiO2 reflection preventing film layer 18 is interposed between the substrate 12 and the window material 14. The compositions of the window material 14 and the epitaxial layer 16 are selected so that they are mutually grid-aligned in ranges of 0
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公开(公告)号：JPH0354870A
公开(公告)日：1991-03-08
申请号：JP19083489
申请日：1989-07-24
Applicant: HAMAMATSU PHOTONICS KK
Inventor： ARAGAKI MINORU , OBA KOICHIRO , KINOSHITA KATSUYUKI , FUTAHASHI TOKUAKI , OTA MASASHI , NAGAI TOSHIMITSU , KIBUNE ATSUSHI
Abstract: PURPOSE:To effectively detect an invisible light image with high resolution by forming an invisible light to visible conversion structure on one end surface of a fiber plate, and disposing a visible photoelectric conversion imaging device on the opposite side surface of said fiber plate such that the input side of the imaging device makes close contact with said opposite side surface of said fiber plate. CONSTITUTION:Invisible light is converted to visible light by an infrared to visible conversion phosphor 24 formed on the end surface of a fiber plate 26, the visible light is converted to photoelectrons by a visible photoelectric conversion part 28 after passing through the plate 26, and the photoelectrons are in turn incident on a vacuum part 30. The photoelectrons are accelerated by high voltage applied between the conversion part 28 and an input surface of the microchannel plate 32 and are incident on a channel of the plate 32 located correspondingly. Secondary electrons are produced there, multiplied, and are incident on the vacuum part 3, and further accelerated and allowed to enter a visible phosphor 36 where they are converted to visible light and detected as an image. Hereby, an invisible light image can effectively be detected with high resolution.
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Patent Agency Ranking
公开(公告)号：JP2002150928A
公开(公告)日：2002-05-24
申请号：JP2000348376
申请日：2000-11-15
Applicant: HAMAMATSU PHOTONICS KK
Inventor： SUGA HIROBUMI , ARAGAKI MINORU , OTA MASASHI , TAKAGI YASUFUMI , UCHIYAMA SHOICHI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor photocathode that has a light-absorbing layer, formed of AlxGa1-x(0
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公开(公告)号：JPH03135015A
公开(公告)日：1991-06-10
申请号：JP27330889
申请日：1989-10-20
Applicant: HAMAMATSU PHOTONICS KK
Inventor： OTA MASASHI
IPC: H01L21/205
Abstract: PURPOSE:To form both an inclination of a band gap and an inclination of a doping amount simultaneously and easily by a method wherein a composition ratio is made definite and only a flow rate of trimethylzinc as a doping material is changed. CONSTITUTION:A sliced GaAS substrate 14 is placed on a carbon susceptor 12 inside a reaction tube 10; InGaAs on the substrate 14 is grown by using an MOCVD growth method. In this case, trimethylgallium TMG and triethylindium TEI as group III raw materials and diethylzinc DEZ as an arsine (AsH3) doping material as a group V raw material, which are respectively H2-based, are used. The TMG is supplied from a TMG bomb 16, the TEI is supplied from a TEI bomb 18 and the DEZ is supplied from a DEZ bomb 20 via mass-flow meters 22. Their compositon is made definite, and only a flow rate of the DEZ is changed. Thereby, a composition inclination of a doping amount and an inclination of the composition ratio, e.g. an internal inclination of a potential energy, can simultaneously be achieved.
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公开(公告)号：JP2004087511A
公开(公告)日：2004-03-18
申请号：JP2002195136
申请日：2002-07-03
Applicant: Hiroshi Fujiyasu , Hamamatsu Photonics Kk , Sota Japan Kk , ソタジャパン有限会社 , 浜松ホトニクス株式会社 , 藤安 洋
Inventor： FUJIYASU HIROSHI , OTA MASASHI , ISHIGAKI SONOKO
IPC: H01S3/06
Abstract: PROBLEM TO BE SOLVED: To realize far-infrared laser oscillation by in a small and simplified configuration. SOLUTION: The far-infrared light emitting device has a base member 2 made of Ag and a plurality of light emitting elements 1 mainly composed of p-type Ge and arranged in a rectangle for the constitution of an optical resonator, and the light emitting elements 1 are embedded in a recess in the upper surface of the base member 2. A stimulation light source 20 is provided for stimulating the p-type Ge, and the stimulation light therefrom stimulates the holes in the p-type Ge heavy-mass band into a light-mass band. Light emission occurs in the process of their transition back into the heavy-mass band and, out of the various wavelengths of light generated in this way, only those coming into resonance in the optical resonator are outputted as a laser beam. COPYRIGHT: (C)2004,JPO
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公开(公告)号：JP2004165571A
公开(公告)日：2004-06-10
申请号：JP2002332454
申请日：2002-11-15
Applicant: Hamamatsu Photonics Kk , Akihiro Ishida , 浜松ホトニクス株式会社 , 明広 石田
Inventor： ISHIDA AKIHIRO , FUJIYASU HIROSHI , OTA MASASHI
IPC: H01L21/205 , H01S5/323 , H01S5/343
Abstract: PROBLEM TO BE SOLVED: To provide a forming method of a nitride thin film for growing an atom layer of high quality in a short time and a manufacturing method of a quantum well device.
SOLUTION: In the method, raw material gas comprising organic metal gas is sprayed on a heated substrate 2-side, a metal element layer 15 is formed on a substrate 2, spraying of raw material gas is stopped in an ammonia atmosphere of 1×10
-3 to 1Pa and the nitride thin film 17 being nitride of the metal element layer 15 is formed on the substrate 2. When raw material gas is sprayed on the substrate 2-side in the ammonia atmosphere, raw material gas expands and it sends out ammonia on a surface of the substrate 2. Organic metal gas in raw material gas forms the metal element layer 15 of one atom layer on the surface of the substrate 2. Ammonia covers again the surface of the substrate 2 and it nitrides the metal element layer on the surface after spraying of raw material gas is stopped. The surface of the nitride thin film 17 is covered by ammonia gas and evaporation of nitrogen is sufficiently prevented after the nitride thin film 17 is formed.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：JPH1083961A
公开(公告)日：1998-03-31
申请号：JP23702796
申请日：1996-09-06
Applicant: HAMAMATSU PHOTONICS KK
Inventor： UCHIYAMA SHOICHI , ISHIGAMI YOSHIHIRO , SUGA HIROBUMI , OTA MASASHI
IPC: H01L21/205 , H01L33/32 , H01S5/00 , H01S5/323
Abstract: PROBLEM TO BE SOLVED: To improve the characteristics of a GaN-system compound semiconductor layer, by forming an AlN layer containing Mg on a substrate, and forming the GaN-system compound semiconductor layer on the AlN layer at a specified temperature. SOLUTION: A saphire substrate 1 is maintained at, e.g. 1,000 deg.C, NH3 is introduced into a growing chamber and the surface of the substrate 1 is nitrided. Then, the temperature of the substrate 1 is lowered to, e.g. 600 deg.C, trimethyl aluminum and NH3 are introduced, bis(ethyl cyclopentadienyl) Mg is introduced and a capped AlN layer 2 is formed. After the AlN layer 2, wherein Mg is added, is formed on the substrate 1, the substrate 1 is heated. With the temperature of the substrate 1 being maintained at, e.g. 950 deg.C, trimethyl gallium and NH3 are introduced into the growing chamber, and a P-type GaN layer 3 is formed. When the GaN layer 3 is formed, Mg in the AlN layer 2 is diffused in the GaN layer 3 and made active, and the P-type GaN layer 3 is formed.
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